JPS57167669A - Capacitor and manufacture thereof - Google Patents

Capacitor and manufacture thereof

Info

Publication number
JPS57167669A
JPS57167669A JP56045138A JP4513881A JPS57167669A JP S57167669 A JPS57167669 A JP S57167669A JP 56045138 A JP56045138 A JP 56045138A JP 4513881 A JP4513881 A JP 4513881A JP S57167669 A JPS57167669 A JP S57167669A
Authority
JP
Japan
Prior art keywords
capacitor
silicon
leakage current
crystal grain
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56045138A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262472B2 (enrdf_load_stackoverflow
Inventor
Takashi Kato
Masao Taguchi
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56045138A priority Critical patent/JPS57167669A/ja
Publication of JPS57167669A publication Critical patent/JPS57167669A/ja
Publication of JPS6262472B2 publication Critical patent/JPS6262472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56045138A 1981-03-27 1981-03-27 Capacitor and manufacture thereof Granted JPS57167669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57167669A true JPS57167669A (en) 1982-10-15
JPS6262472B2 JPS6262472B2 (enrdf_load_stackoverflow) 1987-12-26

Family

ID=12710915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045138A Granted JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57167669A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107854A (ja) * 1983-11-16 1985-06-13 Hitachi Ltd キヤパシタ
JPS6471166A (en) * 1987-09-10 1989-03-16 Sharp Kk Manufacture of tantalum oxide thin film
JPH08279601A (ja) * 1996-02-14 1996-10-22 Hitachi Ltd 半導体装置の製造方法
WO1999025014A1 (en) * 1997-11-10 1999-05-20 Hitachi, Ltd. Dielectric element and manufacturing method therefor
US6410400B1 (en) * 1999-11-09 2002-06-25 Hyundai Electronics Industries Co., Ltd. Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer
US7531405B2 (en) 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107854A (ja) * 1983-11-16 1985-06-13 Hitachi Ltd キヤパシタ
JPS6471166A (en) * 1987-09-10 1989-03-16 Sharp Kk Manufacture of tantalum oxide thin film
JPH08279601A (ja) * 1996-02-14 1996-10-22 Hitachi Ltd 半導体装置の製造方法
WO1999025014A1 (en) * 1997-11-10 1999-05-20 Hitachi, Ltd. Dielectric element and manufacturing method therefor
US6410400B1 (en) * 1999-11-09 2002-06-25 Hyundai Electronics Industries Co., Ltd. Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer
US7531405B2 (en) 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device

Also Published As

Publication number Publication date
JPS6262472B2 (enrdf_load_stackoverflow) 1987-12-26

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