JPS6262071B2 - - Google Patents

Info

Publication number
JPS6262071B2
JPS6262071B2 JP57035042A JP3504282A JPS6262071B2 JP S6262071 B2 JPS6262071 B2 JP S6262071B2 JP 57035042 A JP57035042 A JP 57035042A JP 3504282 A JP3504282 A JP 3504282A JP S6262071 B2 JPS6262071 B2 JP S6262071B2
Authority
JP
Japan
Prior art keywords
metal
resist pattern
insulator
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57035042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58153375A (ja
Inventor
Yoshiaki Sano
Toshio Nonaka
Toshimasa Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3504282A priority Critical patent/JPS58153375A/ja
Publication of JPS58153375A publication Critical patent/JPS58153375A/ja
Publication of JPS6262071B2 publication Critical patent/JPS6262071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3504282A 1982-03-08 1982-03-08 半導体素子の製造方法 Granted JPS58153375A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3504282A JPS58153375A (ja) 1982-03-08 1982-03-08 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3504282A JPS58153375A (ja) 1982-03-08 1982-03-08 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58153375A JPS58153375A (ja) 1983-09-12
JPS6262071B2 true JPS6262071B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=12430978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3504282A Granted JPS58153375A (ja) 1982-03-08 1982-03-08 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58153375A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2612836B2 (ja) * 1987-09-23 1997-05-21 シーメンス、アクチエンゲゼルシヤフト 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
EP0984490A1 (de) 1998-08-13 2000-03-08 Siemens Aktiengesellschaft Verfahren zur Erzeugung strukturierter Materialschichten

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device
JPS5623783A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Formation of electrode for semiconductor device

Also Published As

Publication number Publication date
JPS58153375A (ja) 1983-09-12

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