JPS58153375A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法Info
- Publication number
- JPS58153375A JPS58153375A JP3504282A JP3504282A JPS58153375A JP S58153375 A JPS58153375 A JP S58153375A JP 3504282 A JP3504282 A JP 3504282A JP 3504282 A JP3504282 A JP 3504282A JP S58153375 A JPS58153375 A JP S58153375A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- resist pattern
- layer
- electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000012212 insulator Substances 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 238000001704 evaporation Methods 0.000 abstract description 6
- 230000008020 evaporation Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 8
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 18
- 229910052719 titanium Inorganic materials 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3504282A JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3504282A JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153375A true JPS58153375A (ja) | 1983-09-12 |
| JPS6262071B2 JPS6262071B2 (enrdf_load_stackoverflow) | 1987-12-24 |
Family
ID=12430978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3504282A Granted JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153375A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133375A (ja) * | 1987-09-23 | 1989-05-25 | Siemens Ag | 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法 |
| US6627496B1 (en) | 1998-08-13 | 2003-09-30 | Infineon Technologies Ag | Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55105326A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electronics Corp | Manufacturing method of electrode of semiconductor device |
| JPS5623783A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
-
1982
- 1982-03-08 JP JP3504282A patent/JPS58153375A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55105326A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electronics Corp | Manufacturing method of electrode of semiconductor device |
| JPS5623783A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133375A (ja) * | 1987-09-23 | 1989-05-25 | Siemens Ag | 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法 |
| US6627496B1 (en) | 1998-08-13 | 2003-09-30 | Infineon Technologies Ag | Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262071B2 (enrdf_load_stackoverflow) | 1987-12-24 |
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