JPS6259895B2 - - Google Patents

Info

Publication number
JPS6259895B2
JPS6259895B2 JP56204422A JP20442281A JPS6259895B2 JP S6259895 B2 JPS6259895 B2 JP S6259895B2 JP 56204422 A JP56204422 A JP 56204422A JP 20442281 A JP20442281 A JP 20442281A JP S6259895 B2 JPS6259895 B2 JP S6259895B2
Authority
JP
Japan
Prior art keywords
wavelength
light receiving
electrodes
light
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56204422A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58105569A (ja
Inventor
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56204422A priority Critical patent/JPS58105569A/ja
Publication of JPS58105569A publication Critical patent/JPS58105569A/ja
Publication of JPS6259895B2 publication Critical patent/JPS6259895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Spectrometry And Color Measurement (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP56204422A 1981-12-16 1981-12-16 半導体受光装置 Granted JPS58105569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204422A JPS58105569A (ja) 1981-12-16 1981-12-16 半導体受光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204422A JPS58105569A (ja) 1981-12-16 1981-12-16 半導体受光装置

Publications (2)

Publication Number Publication Date
JPS58105569A JPS58105569A (ja) 1983-06-23
JPS6259895B2 true JPS6259895B2 (mo) 1987-12-14

Family

ID=16490272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204422A Granted JPS58105569A (ja) 1981-12-16 1981-12-16 半導体受光装置

Country Status (1)

Country Link
JP (1) JPS58105569A (mo)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006292437A (ja) * 2005-04-06 2006-10-26 Hamamatsu Photonics Kk 温度検出装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2554971B1 (fr) * 1983-11-14 1986-01-24 Labo Electronique Physique Dispositif a couplage de charges sensible au rayonnement infrarouge et procede de realisation d'un tel dispositif
US4620209A (en) * 1984-09-28 1986-10-28 Texas Instruments Incorporated Mosaic pattern of infrared detectors of different cut off wave lengths
JPS628648U (mo) * 1985-06-29 1987-01-19
US5545381A (en) * 1991-01-31 1996-08-13 Ricoh Company, Ltd. Device for regenerating printed sheet-like recording medium
US5605777A (en) * 1992-08-31 1997-02-25 Ricoh Company, Ltd. Method and apparatus for regenerating image holding member
JP3345472B2 (ja) * 1992-08-31 2002-11-18 株式会社リコー 画像保持支持体の再生方法
JP3340200B2 (ja) * 1992-09-07 2002-11-05 株式会社リコー トナー像担持体の繰り返し使用方法及び該方法用のトナー
EP0639803A3 (en) * 1993-07-21 1996-08-28 Ricoh Kk Apparatus for removing imaging substance from a sheet and sheet processing device.
JP2691512B2 (ja) * 1993-09-22 1997-12-17 株式会社リコー 像保持体からの像形成物質除去方法及びその装置
JPH07140704A (ja) * 1993-09-22 1995-06-02 Ricoh Co Ltd 像保持体の繰り返し使用方法
US5642550A (en) * 1994-02-28 1997-07-01 Ricoh Company, Ltd. Apparatus for removing image forming substance from image holding member
US5518934A (en) * 1994-07-21 1996-05-21 Trustees Of Princeton University Method of fabricating multiwavelength infrared focal plane array detector
US5574538A (en) 1994-09-26 1996-11-12 Ricoh Company, Ltd. Method and apparatus for removing image forming substance from image holding member forming processing situation mark
JPH08166747A (ja) 1994-10-14 1996-06-25 Ricoh Co Ltd シート材からの付着物除去装置
US5813344A (en) * 1994-10-24 1998-09-29 Ricoh Company, Ltd. Method and apparatus for removing image forming substance from image holding member
JP2007027462A (ja) * 2005-07-19 2007-02-01 Sharp Corp 積層型カラーセンサ
JP2007043150A (ja) * 2005-07-29 2007-02-15 Interuniv Micro Electronica Centrum Vzw 細長いナノ構造体を有する波長センシティブ検出器
JP2008039665A (ja) * 2006-08-09 2008-02-21 Kochi Univ Of Technology 紫外線検出素子
DE102008006987A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
JP5731869B2 (ja) * 2011-03-24 2015-06-10 スタンレー電気株式会社 半導体紫外線受光装置
JP5706209B2 (ja) * 2011-03-24 2015-04-22 スタンレー電気株式会社 半導体紫外線受光素子及びその製造方法
CN110335908B (zh) * 2019-06-20 2020-11-13 深圳大学 异质结分波段探测器及其制备方法与应用

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006292437A (ja) * 2005-04-06 2006-10-26 Hamamatsu Photonics Kk 温度検出装置

Also Published As

Publication number Publication date
JPS58105569A (ja) 1983-06-23

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