JPS6258528B2 - - Google Patents

Info

Publication number
JPS6258528B2
JPS6258528B2 JP19679881A JP19679881A JPS6258528B2 JP S6258528 B2 JPS6258528 B2 JP S6258528B2 JP 19679881 A JP19679881 A JP 19679881A JP 19679881 A JP19679881 A JP 19679881A JP S6258528 B2 JPS6258528 B2 JP S6258528B2
Authority
JP
Japan
Prior art keywords
valve
discharge chamber
gas pressure
gas
valve body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19679881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898916A (ja
Inventor
Norio Kanai
Katsuaki Nagatomo
Fumio Shibata
Kunio Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19679881A priority Critical patent/JPS5898916A/ja
Publication of JPS5898916A publication Critical patent/JPS5898916A/ja
Publication of JPS6258528B2 publication Critical patent/JPS6258528B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Details Of Valves (AREA)
  • Drying Of Semiconductors (AREA)
JP19679881A 1981-12-09 1981-12-09 半導体製造装置 Granted JPS5898916A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19679881A JPS5898916A (ja) 1981-12-09 1981-12-09 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19679881A JPS5898916A (ja) 1981-12-09 1981-12-09 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS5898916A JPS5898916A (ja) 1983-06-13
JPS6258528B2 true JPS6258528B2 (es) 1987-12-07

Family

ID=16363819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19679881A Granted JPS5898916A (ja) 1981-12-09 1981-12-09 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS5898916A (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273725A (ja) * 1985-09-27 1987-04-04 Nec Kyushu Ltd 半導体装置製造用プラズマ灰化装置
JPH07509076A (ja) * 1992-10-22 1995-10-05 オーセ　プリンテイング　システムズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 記録担体用の空圧式制動装置
JP2942239B2 (ja) * 1997-05-23 1999-08-30 キヤノン株式会社 排気方法及び排気装置、それを用いたプラズマ処理方法及びプラズマ処理装置
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
WO2010024036A1 (ja) 2008-08-28 2010-03-04 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置のクリーニング方法
JP6969465B2 (ja) * 2018-03-20 2021-11-24 株式会社島津製作所 目標開度推定器および圧力調整真空バルブ

Also Published As

Publication number Publication date
JPS5898916A (ja) 1983-06-13

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