JPS6258528B2 - - Google Patents
Info
- Publication number
- JPS6258528B2 JPS6258528B2 JP19679881A JP19679881A JPS6258528B2 JP S6258528 B2 JPS6258528 B2 JP S6258528B2 JP 19679881 A JP19679881 A JP 19679881A JP 19679881 A JP19679881 A JP 19679881A JP S6258528 B2 JPS6258528 B2 JP S6258528B2
- Authority
- JP
- Japan
- Prior art keywords
- valve
- discharge chamber
- gas pressure
- gas
- valve body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Description
【発明の詳細な説明】
本発明は、半導体製造装置に係り、特に、放電
室内の急速排気並びにガスの一定流量下で放電室
内のガス圧力微調整が要求される半導体製造装置
に好適な半導体製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and in particular, to semiconductor manufacturing equipment suitable for semiconductor manufacturing equipment that requires rapid exhaustion of the discharge chamber and fine adjustment of the gas pressure within the discharge chamber under a constant gas flow rate. It is related to the device.
従来、半導体製造装置における放電室内の急速
排気並びにガスの一定流量下での放電室内のガス
圧力微調節は、バタフライバルブ、ストツプバル
ブ等の弁の開度を制御することにより行われてい
るが、次のような欠点があつた。 Conventionally, rapid evacuation of the discharge chamber in semiconductor manufacturing equipment and fine adjustment of the gas pressure within the discharge chamber under a constant gas flow rate have been performed by controlling the opening degree of valves such as butterfly valves and stop valves. There were drawbacks such as:
(1) わずかな弁開度の変化により、排気抵抗が大
きく変化するため、放電室内の急速排気は行え
てもガスの一定流量下での放電室内のガス圧力
微調節が極めて困難である。(1) Since the exhaust resistance changes greatly due to a slight change in the valve opening degree, it is extremely difficult to finely adjust the gas pressure in the discharge chamber under a constant flow rate of gas, even if rapid exhaust can be performed within the discharge chamber.
(2) 弁開度の変化と排気抵抗の変化との間には直
線関係が成立たず、したがつて、放電室内のガ
ス圧力の自動調節が困難である。(2) There is no linear relationship between the change in valve opening and the change in exhaust resistance, and therefore it is difficult to automatically adjust the gas pressure in the discharge chamber.
本発明は、上記欠点の除去を目的としたもの
で、弁箱と、該弁箱に内設され開口面積が放電室
に連結された排気用の配管の断面積と同等で、か
つ、直線的に排気抵抗可変可能な形状の穴が穿設
された弁座と、該弁座に摺動可能に設けられた弁
体と、該弁体を摺動させる弁体駆動装置とで構成
された排気抵抗可変弁を前記配管に設けたことを
特徴とし、放電室内の急速排気並びに反応ガスの
一定流量下での放電室内のガス圧力微調節が容易
に、かつ、自動的に行える半導体製造装置を提供
するものである。 The present invention aims to eliminate the above-mentioned drawbacks, and has a valve box that has an opening area that is equal to the cross-sectional area of the exhaust pipe connected to the discharge chamber, and that has a straight line. An exhaust system consisting of a valve seat with a hole in a shape that allows variable exhaust resistance, a valve body slidably provided on the valve seat, and a valve body drive device that slides the valve body. Provided is a semiconductor manufacturing apparatus, characterized in that a variable resistance valve is provided in the piping, and allows rapid exhaustion of the discharge chamber and fine adjustment of the gas pressure within the discharge chamber under a constant flow rate of reaction gas easily and automatically. It is something to do.
本発明の一実施例を第１図〜第３図により説明
する。 An embodiment of the present invention will be described with reference to FIGS. 1 to 3.
第１図は、本発明による半導体製造装置の系統
図で、ウエーハを加工する放電室１０には、ガス
源２０と、ガス源２０から放電室１０に供給され
るガスの流量を調節するガス流量調節装置２１と
が配管２２を介して連結され、また、真空ポンプ
３０と、バルブ３１ａと、トラツプ３２と、バル
ブ３１ｂと、排気抵抗可変弁４０とが配管３３を
介して放電室１０連結されている。ここで、排気
抵抗可変弁４０は、第２図に示すように、配管３
３に、例えば、Ｏリングを介して気密に連結され
た弁箱４１と、弁箱４１に着脱可能に内設され、
開口面積が配管３３の断面積と同等で、かつ、直
線的に排気抵抗可変可能な形状、例えば、第３図
に示すような、開口面積が配管３３の断面積と同
等のＴ字形状の穴４２が穿設された弁座４３と、
弁座４３に摺動可能に設けられた弁体４４と、弁
体４４と駆動軸４５で連結された弁体駆動装置４
６とで構成されている。また、弁体駆動装置４６
は放電室１０に設けられた真空計１１と接続した
ガス圧力制御装置４７に接続されている。 FIG. 1 is a system diagram of a semiconductor manufacturing apparatus according to the present invention, in which a discharge chamber 10 for processing wafers includes a gas source 20 and a gas flow rate for adjusting the flow rate of gas supplied from the gas source 20 to the discharge chamber 10. The adjustment device 21 is connected to the discharge chamber 10 via a pipe 22, and the vacuum pump 30, the valve 31a, the trap 32, the valve 31b, and the variable exhaust resistance valve 40 are connected to the discharge chamber 10 via the pipe 33. There is. Here, the exhaust resistance variable valve 40 is connected to the piping 3 as shown in FIG.
3, for example, a valve box 41 airtightly connected via an O-ring;
A hole whose opening area is equivalent to the cross-sectional area of the pipe 33 and whose exhaust resistance can be varied linearly, for example, a T-shaped hole whose opening area is equivalent to the cross-sectional area of the pipe 33 as shown in FIG. A valve seat 43 with a hole 42 formed therein;
A valve body 44 is slidably provided on the valve seat 43, and a valve body drive device 4 is connected to the valve body 44 by a drive shaft 45.
It consists of 6. In addition, the valve body drive device 46
is connected to a gas pressure control device 47 which is connected to a vacuum gauge 11 provided in the discharge chamber 10.
排気抵抗可変弁４０の弁開度を全開とし真空ポ
ンプ３０により急速排気された放電室１０には、
ガス源２０からガスがガス流量調節装置２１によ
り流量を定量調節され供給され、それと同時に、
放電室１０内のガス圧力は真空計１１で計測さ
れ、計測されたガス圧力をもとにガス圧力制御装
置４７により排気抵抗可変弁４０の弁開度を制御
することにより放電室１０内のガス圧力は所定圧
力に自動調節される。その後、引続き弁開度の変
化と排気抵抗の変化とが直線関係にある排気抵控
可変弁４０の弁開度が、真空計１１で計測された
放電室１０内のガス圧力をもとにガス圧力制御装
置４７により弁体４４を駆動軸４５を介して弁体
駆動装置４６で第２図に示すように矢印方向に摺
動させることで制御され、ガスの一定流量下での
放電室１０内のガス圧力微調節が自動的に行わ
れ、放電室１０内のガス圧力は常に所定圧力に保
持される。 The discharge chamber 10 is rapidly evacuated by the vacuum pump 30 with the variable exhaust resistance valve 40 fully opened.
Gas is supplied from the gas source 20 with the flow rate adjusted by the gas flow rate adjustment device 21, and at the same time,
The gas pressure in the discharge chamber 10 is measured by the vacuum gauge 11, and the gas pressure in the discharge chamber 10 is controlled by controlling the valve opening degree of the variable exhaust resistance valve 40 by the gas pressure control device 47 based on the measured gas pressure. The pressure is automatically adjusted to a predetermined pressure. Thereafter, the valve opening of the exhaust resistance variable valve 40 in which the change in valve opening and the change in exhaust resistance are in a linear relationship is determined based on the gas pressure in the discharge chamber 10 measured by the vacuum gauge 11. The valve body 44 is controlled by the pressure control device 47 by sliding it in the direction of the arrow as shown in FIG. Fine adjustment of the gas pressure is automatically performed, and the gas pressure in the discharge chamber 10 is always maintained at a predetermined pressure.
本実施例のような半導体製造装置では、排気抵
抗可変弁の開口面積が排気用の配管の断面積と同
等であり、かつ、弁開度の変化と排気抵抗の変化
とが直線関係にあるため、放電室内の急速排気並
びにガスの一定流量下での放電室内のガス圧力微
調節を行うことができると共に、放電室内のガス
圧力の自動調節を行うことができる。 In semiconductor manufacturing equipment such as this example, the opening area of the variable exhaust resistance valve is equivalent to the cross-sectional area of the exhaust piping, and the change in valve opening and the change in exhaust resistance are in a linear relationship. It is possible to perform rapid evacuation of the discharge chamber and finely adjust the gas pressure within the discharge chamber under a constant gas flow rate, and also to automatically adjust the gas pressure within the discharge chamber.
第４図は、弁座に穿設される穴の形状の他の実
施例で、弁座４３′には、開口面積が排気用の配
管断面積と同等で、かつ、末広がり形状の穴４
２′が穿設されている。 FIG. 4 shows another example of the shape of the hole drilled in the valve seat.The valve seat 43' has a hole 4 whose opening area is equal to the cross-sectional area of the exhaust pipe and whose shape widens toward the end.
2' is drilled.
このような弁座を用いた場合は、真空ポンプの
排気性能の劣化に良好に対応することができる。 When such a valve seat is used, deterioration in the exhaust performance of the vacuum pump can be satisfactorily coped with.
本発明は、以上説明したように、放電室内の急
速排気並びにガスの一定流量下での放電室内のガ
ス圧力微調節を行うことができると共に、放電室
内のガス圧力の自動調節を行うことができるとい
う効果がある。 As explained above, the present invention is capable of rapid exhaustion of the discharge chamber and fine adjustment of the gas pressure within the discharge chamber under a constant flow rate of gas, as well as automatic adjustment of the gas pressure within the discharge chamber. There is an effect.
第１図から第３図は、本発明の一実施例を説明
するもので、第１図は、本発明による半導体製造
装置の系統図、第２図は、排気抵抗可変弁の縦断
面図、第３図は、弁座の平面図、第４図は、弁座
に穿設される穴の形状の他の実施例を説明するも
ので、弁座の平面図である。
１０……放電室、１１……真空計、２０……ガ
ス源、２１……ガス流量調節装置、２２，２３…
…配管、３０……真空ポンプ、３１ａ，３１ｂ…
…バルブ、３２……トラツプ、４０……排気抵抗
可変弁、４１……弁箱、４２……穴、４３……弁
座、４４……弁体、４５……駆動軸、４６……弁
体駆動装置、４７……ガス圧力制御装置。
1 to 3 illustrate an embodiment of the present invention, in which FIG. 1 is a system diagram of a semiconductor manufacturing apparatus according to the present invention, FIG. 2 is a longitudinal sectional view of a variable exhaust resistance valve, FIG. 3 is a plan view of the valve seat, and FIG. 4 is a plan view of the valve seat, illustrating another embodiment of the shape of the hole formed in the valve seat. DESCRIPTION OF SYMBOLS 10... Discharge chamber, 11... Vacuum gauge, 20... Gas source, 21... Gas flow rate adjustment device, 22, 23...
...Piping, 30...Vacuum pump, 31a, 31b...
... Valve, 32 ... Trap, 40 ... Variable exhaust resistance valve, 41 ... Valve box, 42 ... Hole, 43 ... Valve seat, 44 ... Valve body, 45 ... Drive shaft, 46 ... Valve body Drive device, 47... gas pressure control device.
Claims (1)
に連結された排気用の配管の断面積と同等で、か
つ、直線的に排気抵抗可変可能な形状の穴が穿設
された弁座と、該弁座に摺動可能に設けられた弁
体と、該弁体を摺動させる弁体駆動装置とで構成
された排気抵抗可変弁を前記配管に設けたことを
特徴とする半導体製造装置。1. A hole is drilled in the valve box and inside the valve box, the opening area of which is equivalent to the cross-sectional area of the exhaust piping connected to the discharge chamber, and the shape of which allows the exhaust resistance to be varied linearly. A variable exhaust resistance valve is provided in the piping, and includes a valve seat, a valve body slidably provided on the valve seat, and a valve body drive device that slides the valve body. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19679881A JPS5898916A (en) | 1981-12-09 | 1981-12-09 | Manufacturing device of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19679881A JPS5898916A (en) | 1981-12-09 | 1981-12-09 | Manufacturing device of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898916A JPS5898916A (en) | 1983-06-13 |
| JPS6258528B2 true JPS6258528B2 (en) | 1987-12-07 |
Family
ID=16363819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19679881A Granted JPS5898916A (en) | 1981-12-09 | 1981-12-09 | Manufacturing device of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898916A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6273725A (en) * | 1985-09-27 | 1987-04-04 | Nec Kyushu Ltd | Plasma ashing apparatus for manufacturing semiconductor device |
| US5627633A (en) * | 1992-10-22 | 1997-05-06 | Siemens Nixdorf Informationssysteme Aktiengesellschaft | Pneumatic braking device for a recording substrate |
| JP2942239B2 (en) * | 1997-05-23 | 1999-08-30 | キヤノン株式会社 | Exhaust method and exhaust apparatus, plasma processing method and plasma processing apparatus using the same |
| JP3352418B2 (en) | 1999-01-28 | 2002-12-03 | キヤノン株式会社 | Pressure reduction method and pressure reduction device |
| WO2010024036A1 (en) | 2008-08-28 | 2010-03-04 | 東京エレクトロン株式会社 | Plasma processing device and method for cleaning plasma processing device |
| JP6969465B2 (en) * | 2018-03-20 | 2021-11-24 | 株式会社島津製作所 | Target opening estimator and pressure adjustment vacuum valve |
-
1981
- 1981-12-09 JP JP19679881A patent/JPS5898916A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5898916A (en) | 1983-06-13 |
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