JPS6257111B2 - - Google Patents

Info

Publication number
JPS6257111B2
JPS6257111B2 JP55117386A JP11738680A JPS6257111B2 JP S6257111 B2 JPS6257111 B2 JP S6257111B2 JP 55117386 A JP55117386 A JP 55117386A JP 11738680 A JP11738680 A JP 11738680A JP S6257111 B2 JPS6257111 B2 JP S6257111B2
Authority
JP
Japan
Prior art keywords
region
channel
source
drain
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55117386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5740983A (en
Inventor
Koichi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55117386A priority Critical patent/JPS5740983A/ja
Publication of JPS5740983A publication Critical patent/JPS5740983A/ja
Publication of JPS6257111B2 publication Critical patent/JPS6257111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55117386A 1980-08-26 1980-08-26 Semiconductor device and manufacture thereof Granted JPS5740983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117386A JPS5740983A (en) 1980-08-26 1980-08-26 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117386A JPS5740983A (en) 1980-08-26 1980-08-26 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5740983A JPS5740983A (en) 1982-03-06
JPS6257111B2 true JPS6257111B2 (cs) 1987-11-30

Family

ID=14710357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117386A Granted JPS5740983A (en) 1980-08-26 1980-08-26 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5740983A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW287307B (cs) * 1992-04-14 1996-10-01 Philips Electronics Nv

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110281A (ja) * 1975-03-24 1976-09-29 Mitsubishi Electric Corp Denkaikokatoranjisuta
JPS53142883A (en) * 1977-05-19 1978-12-12 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5435684A (en) * 1977-08-25 1979-03-15 Seiko Instr & Electronics Ltd Junction type field effect transistor

Also Published As

Publication number Publication date
JPS5740983A (en) 1982-03-06

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