JPS5740983A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5740983A JPS5740983A JP11738680A JP11738680A JPS5740983A JP S5740983 A JPS5740983 A JP S5740983A JP 11738680 A JP11738680 A JP 11738680A JP 11738680 A JP11738680 A JP 11738680A JP S5740983 A JPS5740983 A JP S5740983A
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel
- type impurity
- channel length
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11738680A JPS5740983A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11738680A JPS5740983A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5740983A true JPS5740983A (en) | 1982-03-06 |
JPS6257111B2 JPS6257111B2 (ja) | 1987-11-30 |
Family
ID=14710357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11738680A Granted JPS5740983A (en) | 1980-08-26 | 1980-08-26 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740983A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5338949A (en) * | 1992-04-14 | 1994-08-16 | U.S. Philips Corporation | Semiconductor device having series-connected junction field effect transistors |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110281A (ja) * | 1975-03-24 | 1976-09-29 | Mitsubishi Electric Corp | Denkaikokatoranjisuta |
JPS53142883A (en) * | 1977-05-19 | 1978-12-12 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS5435684A (en) * | 1977-08-25 | 1979-03-15 | Seiko Instr & Electronics Ltd | Junction type field effect transistor |
-
1980
- 1980-08-26 JP JP11738680A patent/JPS5740983A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110281A (ja) * | 1975-03-24 | 1976-09-29 | Mitsubishi Electric Corp | Denkaikokatoranjisuta |
JPS53142883A (en) * | 1977-05-19 | 1978-12-12 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS5435684A (en) * | 1977-08-25 | 1979-03-15 | Seiko Instr & Electronics Ltd | Junction type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5338949A (en) * | 1992-04-14 | 1994-08-16 | U.S. Philips Corporation | Semiconductor device having series-connected junction field effect transistors |
Also Published As
Publication number | Publication date |
---|---|
JPS6257111B2 (ja) | 1987-11-30 |
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