JPS6255696B2 - - Google Patents
Info
- Publication number
- JPS6255696B2 JPS6255696B2 JP55069819A JP6981980A JPS6255696B2 JP S6255696 B2 JPS6255696 B2 JP S6255696B2 JP 55069819 A JP55069819 A JP 55069819A JP 6981980 A JP6981980 A JP 6981980A JP S6255696 B2 JPS6255696 B2 JP S6255696B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protective film
- film
- polyimide
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920001721 polyimide Polymers 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004642 Polyimide Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920002647 polyamide Polymers 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6981980A JPS56167333A (en) | 1980-05-26 | 1980-05-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6981980A JPS56167333A (en) | 1980-05-26 | 1980-05-26 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56167333A JPS56167333A (en) | 1981-12-23 |
| JPS6255696B2 true JPS6255696B2 (fr) | 1987-11-20 |
Family
ID=13413740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6981980A Granted JPS56167333A (en) | 1980-05-26 | 1980-05-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167333A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710599B2 (ja) * | 1987-01-31 | 1995-02-08 | 株式会社東芝 | サ−マルヘツド |
| JPH0724275B2 (ja) * | 1987-11-06 | 1995-03-15 | 三菱電機株式会社 | 半導体装置 |
| US5198685A (en) * | 1990-08-01 | 1993-03-30 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus with shock-absorbing layer |
| JPH08162528A (ja) * | 1994-10-03 | 1996-06-21 | Sony Corp | 半導体装置の層間絶縁膜構造 |
| JP5600698B2 (ja) * | 2012-03-14 | 2014-10-01 | 株式会社 日立パワーデバイス | ＳｉＣ素子搭載パワー半導体モジュール |
-
1980
- 1980-05-26 JP JP6981980A patent/JPS56167333A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56167333A (en) | 1981-12-23 |
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