JPS56167333A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56167333A
JPS56167333A JP6981980A JP6981980A JPS56167333A JP S56167333 A JPS56167333 A JP S56167333A JP 6981980 A JP6981980 A JP 6981980A JP 6981980 A JP6981980 A JP 6981980A JP S56167333 A JPS56167333 A JP S56167333A
Authority
JP
Japan
Prior art keywords
polyimide
layer
coating
protective coating
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6981980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255696B2 (fr
Inventor
Yorihiro Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6981980A priority Critical patent/JPS56167333A/ja
Publication of JPS56167333A publication Critical patent/JPS56167333A/ja
Publication of JPS6255696B2 publication Critical patent/JPS6255696B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP6981980A 1980-05-26 1980-05-26 Semiconductor device Granted JPS56167333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6981980A JPS56167333A (en) 1980-05-26 1980-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6981980A JPS56167333A (en) 1980-05-26 1980-05-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56167333A true JPS56167333A (en) 1981-12-23
JPS6255696B2 JPS6255696B2 (fr) 1987-11-20

Family

ID=13413740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6981980A Granted JPS56167333A (en) 1980-05-26 1980-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56167333A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63189254A (ja) * 1987-01-31 1988-08-04 Toshiba Corp サ−マルヘツド
JPH01123428A (ja) * 1987-11-06 1989-05-16 Mitsubishi Electric Corp 半導体装置
US5198685A (en) * 1990-08-01 1993-03-30 Canon Kabushiki Kaisha Photoelectric conversion apparatus with shock-absorbing layer
US5646440A (en) * 1994-10-03 1997-07-08 Sony Corporation Interlayer dielectric structure for semiconductor device
JP2013191716A (ja) * 2012-03-14 2013-09-26 Hitachi Ltd ＳｉＣ素子搭載パワー半導体モジュール

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63189254A (ja) * 1987-01-31 1988-08-04 Toshiba Corp サ−マルヘツド
JPH01123428A (ja) * 1987-11-06 1989-05-16 Mitsubishi Electric Corp 半導体装置
US5198685A (en) * 1990-08-01 1993-03-30 Canon Kabushiki Kaisha Photoelectric conversion apparatus with shock-absorbing layer
US5646440A (en) * 1994-10-03 1997-07-08 Sony Corporation Interlayer dielectric structure for semiconductor device
JP2013191716A (ja) * 2012-03-14 2013-09-26 Hitachi Ltd ＳｉＣ素子搭載パワー半導体モジュール

Also Published As

Publication number Publication date
JPS6255696B2 (fr) 1987-11-20

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