JPS6244431B2 - - Google Patents

Info

Publication number
JPS6244431B2
JPS6244431B2 JP53145346A JP14534678A JPS6244431B2 JP S6244431 B2 JPS6244431 B2 JP S6244431B2 JP 53145346 A JP53145346 A JP 53145346A JP 14534678 A JP14534678 A JP 14534678A JP S6244431 B2 JPS6244431 B2 JP S6244431B2
Authority
JP
Japan
Prior art keywords
layer
junction
light
band gap
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53145346A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5572084A (en
Inventor
Yoshihisa Yamamoto
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14534678A priority Critical patent/JPS5572084A/ja
Publication of JPS5572084A publication Critical patent/JPS5572084A/ja
Publication of JPS6244431B2 publication Critical patent/JPS6244431B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
JP14534678A 1978-11-27 1978-11-27 Semiconductor photo-detector Granted JPS5572084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14534678A JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14534678A JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Publications (2)

Publication Number Publication Date
JPS5572084A JPS5572084A (en) 1980-05-30
JPS6244431B2 true JPS6244431B2 (enExample) 1987-09-21

Family

ID=15383049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14534678A Granted JPS5572084A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Country Status (1)

Country Link
JP (1) JPS5572084A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162280A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Photodiode
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS57159072A (en) * 1981-03-25 1982-10-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of avalanche photodiode
JPS6225420Y2 (enExample) * 1981-03-30 1987-06-29
JPS57190370A (en) * 1981-05-18 1982-11-22 Fujitsu Ltd Semiconductor light receiving element
JPS57198668A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
GB8322235D0 (en) * 1983-08-18 1983-09-21 Standard Telephones Cables Ltd Photodetector
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
JP2970815B2 (ja) * 1990-04-11 1999-11-02 株式会社東芝 半導体受光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5572084A (en) 1980-05-30

Similar Documents

Publication Publication Date Title
CN101312221B (zh) 半导体受光元件及其制造方法
US4481523A (en) Avalanche photodiodes
US7348608B2 (en) Planar avalanche photodiode
US4651187A (en) Avalanche photodiode
US4442444A (en) Avalanche photodiodes
JP2970815B2 (ja) 半導体受光素子
JP3837606B2 (ja) アバランシェフォトダイオードの製造方法
US6229162B1 (en) Planar-type avalanche photodiode
JPH08242016A (ja) フォトダイオードの製造方法
JP5011607B2 (ja) 受光素子
JPS6244431B2 (enExample)
JP2996943B2 (ja) 半導体受光装置及びその製造方法
JPS6244709B2 (enExample)
JPS63955B2 (enExample)
JP2005116681A (ja) 光半導体受光素子およびその製造方法
JP5341056B2 (ja) 半導体受光素子の製造方法
JP2936539B2 (ja) アバランシェフォトダイオード及びその製造方法
JP2793238B2 (ja) 半導体受光装置及びその製造方法
GB2157490A (en) Avalanche photodetector
JP2763352B2 (ja) 半導体受光素子
JP3074574B2 (ja) 半導体受光素子の製造方法
JP3055030B2 (ja) アバランシェ・フォトダイオードの製造方法
JPS59136981A (ja) 半導体受光装置
KR970006614B1 (ko) 광통신용 애벌렌치 포토다이오드 제조방법
JPS6222545B2 (enExample)