JPS6243543B2 - - Google Patents

Info

Publication number
JPS6243543B2
JPS6243543B2 JP3505680A JP3505680A JPS6243543B2 JP S6243543 B2 JPS6243543 B2 JP S6243543B2 JP 3505680 A JP3505680 A JP 3505680A JP 3505680 A JP3505680 A JP 3505680A JP S6243543 B2 JPS6243543 B2 JP S6243543B2
Authority
JP
Japan
Prior art keywords
conductivity type
region
type
layer
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3505680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56131942A (en
Inventor
Yoshinobu Monma
Tadashi Kirisako
Akira Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3505680A priority Critical patent/JPS56131942A/ja
Publication of JPS56131942A publication Critical patent/JPS56131942A/ja
Publication of JPS6243543B2 publication Critical patent/JPS6243543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP3505680A 1980-03-19 1980-03-19 Manufacture of semiconductor device Granted JPS56131942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3505680A JPS56131942A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3505680A JPS56131942A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131942A JPS56131942A (en) 1981-10-15
JPS6243543B2 true JPS6243543B2 (US20100056889A1-20100304-C00004.png) 1987-09-14

Family

ID=12431369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3505680A Granted JPS56131942A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131942A (US20100056889A1-20100304-C00004.png)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135034U (US20100056889A1-20100304-C00004.png) * 1988-12-16 1989-09-14
JPH0433835Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-27 1992-08-12
JPH0437582Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-11 1992-09-03
JPH0446699Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-19 1992-11-04
US8833987B2 (en) 2005-09-14 2014-09-16 Donnelly Corporation Mirror reflective element sub-assembly for exterior rearview mirror of a vehicle
US8884788B2 (en) 1998-04-08 2014-11-11 Donnelly Corporation Automotive communication system
US8908039B2 (en) 2000-03-02 2014-12-09 Donnelly Corporation Vehicular video mirror system
US9073491B2 (en) 2002-09-20 2015-07-07 Donnelly Corporation Exterior rearview mirror assembly
US9090211B2 (en) 2002-09-20 2015-07-28 Donnelly Corporation Variable reflectance mirror reflective element for exterior mirror assembly
US9090213B2 (en) 2004-12-15 2015-07-28 Magna Electronics Inc. Accessory mounting system for a vehicle
US9694749B2 (en) 2001-01-23 2017-07-04 Magna Electronics Inc. Trailer hitching aid system for vehicle
US11308720B2 (en) 2004-12-23 2022-04-19 Magna Electronics Inc. Vehicular imaging system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240534A (ja) * 1993-03-16 1995-09-12 Seiko Instr Inc 光電変換半導体装置及びその製造方法
TW512526B (en) * 2000-09-07 2002-12-01 Sanyo Electric Co Semiconductor integrated circuit device and manufacturing method thereof
JP2002083876A (ja) * 2000-09-07 2002-03-22 Sanyo Electric Co Ltd 半導体集積回路装置の製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0437582Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-11 1992-09-03
JPH0446699Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-19 1992-11-04
JPH0433835Y2 (US20100056889A1-20100304-C00004.png) * 1987-05-27 1992-08-12
JPH01135034U (US20100056889A1-20100304-C00004.png) * 1988-12-16 1989-09-14
US8884788B2 (en) 1998-04-08 2014-11-11 Donnelly Corporation Automotive communication system
US8908039B2 (en) 2000-03-02 2014-12-09 Donnelly Corporation Vehicular video mirror system
US9694749B2 (en) 2001-01-23 2017-07-04 Magna Electronics Inc. Trailer hitching aid system for vehicle
US9073491B2 (en) 2002-09-20 2015-07-07 Donnelly Corporation Exterior rearview mirror assembly
US9090211B2 (en) 2002-09-20 2015-07-28 Donnelly Corporation Variable reflectance mirror reflective element for exterior mirror assembly
US9090213B2 (en) 2004-12-15 2015-07-28 Magna Electronics Inc. Accessory mounting system for a vehicle
US11308720B2 (en) 2004-12-23 2022-04-19 Magna Electronics Inc. Vehicular imaging system
US8833987B2 (en) 2005-09-14 2014-09-16 Donnelly Corporation Mirror reflective element sub-assembly for exterior rearview mirror of a vehicle
US9045091B2 (en) 2005-09-14 2015-06-02 Donnelly Corporation Mirror reflective element sub-assembly for exterior rearview mirror of a vehicle
US9694753B2 (en) 2005-09-14 2017-07-04 Magna Mirrors Of America, Inc. Mirror reflective element sub-assembly for exterior rearview mirror of a vehicle

Also Published As

Publication number Publication date
JPS56131942A (en) 1981-10-15

Similar Documents

Publication Publication Date Title
US4925808A (en) Method for making IC die with dielectric isolation
US4056413A (en) Etching method for flattening a silicon substrate utilizing an anisotropic alkali etchant
JPS6243543B2 (US20100056889A1-20100304-C00004.png)
US3796612A (en) Semiconductor isolation method utilizing anisotropic etching and differential thermal oxidation
US3938176A (en) Process for fabricating dielectrically isolated semiconductor components of an integrated circuit
JPS62106665A (ja) 集積回路装置の製造方法
US3412296A (en) Monolithic structure with threeregion or field effect complementary transistors
JPS6362897B2 (US20100056889A1-20100304-C00004.png)
US4231057A (en) Semiconductor device and method for its preparation
JPS5846171B2 (ja) 半導体装置の製造方法
US4820653A (en) Technique for fabricating complementary dielectrically isolated wafer
JPS61182242A (ja) 半導体装置の製造方法
JPH01319969A (ja) 半導体装置の製造方法
JPH07245294A (ja) 半導体装置の製造方法
EP0236811A2 (en) Method of manufacturing semiconductor device
JPS61232623A (ja) 半導体装置の製造方法
JPS6244853B2 (US20100056889A1-20100304-C00004.png)
USRE31937E (en) Semiconductor device and method for its preparation
KR0158623B1 (ko) 반도체 장치 및 그 제조 방법
JPS62216356A (ja) 半導体集積回路の製造方法
JPS6298639A (ja) 誘電体分離基板の製造方法
JPS61182241A (ja) 誘電体分離形半導体装置の製造方法
JPH01238033A (ja) 誘電体分離型半導体基板及びその製造方法
JPH0421343B2 (US20100056889A1-20100304-C00004.png)
JPS62214637A (ja) 半導体装置とその製造方法