JPS6243343B2 - - Google Patents
Info
- Publication number
- JPS6243343B2 JPS6243343B2 JP56102743A JP10274381A JPS6243343B2 JP S6243343 B2 JPS6243343 B2 JP S6243343B2 JP 56102743 A JP56102743 A JP 56102743A JP 10274381 A JP10274381 A JP 10274381A JP S6243343 B2 JPS6243343 B2 JP S6243343B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- plating
- rhodium
- gold plating
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H10W70/66—
-
- H10W72/00—
-
- H10W72/30—
-
- H10W76/157—
-
- H10W76/60—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H10W72/075—
-
- H10W72/5524—
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- H10W72/884—
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- H10W72/952—
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- H10W90/754—
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- H10W90/756—
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102743A JPS584955A (ja) | 1981-06-30 | 1981-06-30 | 金めつきされた電子部品パツケ−ジ |
| GB08217956A GB2103420B (en) | 1981-06-30 | 1982-06-21 | Gold-plated package for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102743A JPS584955A (ja) | 1981-06-30 | 1981-06-30 | 金めつきされた電子部品パツケ−ジ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS584955A JPS584955A (ja) | 1983-01-12 |
| JPS6243343B2 true JPS6243343B2 (cg-RX-API-DMAC10.html) | 1987-09-12 |
Family
ID=14335709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56102743A Granted JPS584955A (ja) | 1981-06-30 | 1981-06-30 | 金めつきされた電子部品パツケ−ジ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS584955A (cg-RX-API-DMAC10.html) |
| GB (1) | GB2103420B (cg-RX-API-DMAC10.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961155A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | 半導体装置 |
| EP0229850B1 (en) * | 1985-07-16 | 1992-06-10 | Nippon Telegraph and Telephone Corporation | Connection terminals between substrates and method of producing the same |
| US4701573A (en) * | 1985-09-26 | 1987-10-20 | Itt Gallium Arsenide Technology Center | Semiconductor chip housing |
| FR2610451B1 (fr) * | 1987-01-30 | 1989-04-21 | Radiotechnique Compelec | Dispositif opto-electronique comprenant au moins un composant monte sur un support |
| DE3704200A1 (de) * | 1987-02-11 | 1988-08-25 | Bbc Brown Boveri & Cie | Verfahren zur herstellung einer verbindung zwischen einem bonddraht und einer kontaktflaeche bei hybriden dickschicht-schaltkreisen |
| CA2092165C (en) * | 1992-03-23 | 2001-05-15 | Tuyosi Nagano | Chip carrier for optical device |
| JPH0799368A (ja) * | 1993-09-29 | 1995-04-11 | Mitsubishi Electric Corp | 光半導体装置 |
| FR2713401B1 (fr) * | 1993-09-29 | 1997-01-17 | Mitsubishi Electric Corp | Dispositif à semiconducteurs optique. |
| JP2606115B2 (ja) * | 1993-12-27 | 1997-04-30 | 日本電気株式会社 | 半導体実装基板用素子接合パッド |
| DE102008021435A1 (de) * | 2008-04-29 | 2009-11-19 | Schott Ag | Gehäuse für LEDs mit hoher Leistung |
| CN119297161A (zh) * | 2024-11-18 | 2025-01-10 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种贴片式功率混合集成电路模块封装方法及其封装结构 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3609472A (en) * | 1969-05-21 | 1971-09-28 | Trw Semiconductors Inc | High-temperature semiconductor and method of fabrication |
| JPS517906B2 (cg-RX-API-DMAC10.html) * | 1971-08-18 | 1976-03-11 |
-
1981
- 1981-06-30 JP JP56102743A patent/JPS584955A/ja active Granted
-
1982
- 1982-06-21 GB GB08217956A patent/GB2103420B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2103420A (en) | 1983-02-16 |
| GB2103420B (en) | 1986-01-29 |
| JPS584955A (ja) | 1983-01-12 |
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