JPS6241430B2 - - Google Patents

Info

Publication number
JPS6241430B2
JPS6241430B2 JP55070297A JP7029780A JPS6241430B2 JP S6241430 B2 JPS6241430 B2 JP S6241430B2 JP 55070297 A JP55070297 A JP 55070297A JP 7029780 A JP7029780 A JP 7029780A JP S6241430 B2 JPS6241430 B2 JP S6241430B2
Authority
JP
Japan
Prior art keywords
gate electrode
molybdenum
electrode wiring
nitride
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55070297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56167365A (en
Inventor
Hidekazu Okabayashi
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7029780A priority Critical patent/JPS56167365A/ja
Publication of JPS56167365A publication Critical patent/JPS56167365A/ja
Publication of JPS6241430B2 publication Critical patent/JPS6241430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP7029780A 1980-05-27 1980-05-27 Manufacture of mos type semiconductor device Granted JPS56167365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7029780A JPS56167365A (en) 1980-05-27 1980-05-27 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7029780A JPS56167365A (en) 1980-05-27 1980-05-27 Manufacture of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS56167365A JPS56167365A (en) 1981-12-23
JPS6241430B2 true JPS6241430B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=13427376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7029780A Granted JPS56167365A (en) 1980-05-27 1980-05-27 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56167365A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665213B2 (ja) * 1985-10-31 1994-08-22 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS56167365A (en) 1981-12-23

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