JPS6240868B2 - - Google Patents
Info
- Publication number
- JPS6240868B2 JPS6240868B2 JP58236850A JP23685083A JPS6240868B2 JP S6240868 B2 JPS6240868 B2 JP S6240868B2 JP 58236850 A JP58236850 A JP 58236850A JP 23685083 A JP23685083 A JP 23685083A JP S6240868 B2 JPS6240868 B2 JP S6240868B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- type
- conductivity type
- trench
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 239000010410 layer Substances 0.000 description 36
- 230000015654 memory Effects 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58236850A JPS60128657A (ja) | 1983-12-15 | 1983-12-15 | 半導体記憶装置 |
| KR1019840007691A KR890004764B1 (ko) | 1983-12-15 | 1984-12-06 | 반도체 기억장치 |
| EP84115474A EP0169938B1 (en) | 1983-12-15 | 1984-12-14 | Semiconductor memory device having trenched capacitor |
| DE8484115474T DE3477532D1 (en) | 1983-12-15 | 1984-12-14 | Semiconductor memory device having trenched capacitor |
| US07/857,727 US5428236A (en) | 1983-12-15 | 1992-03-26 | Semiconductor memory device having trenched capicitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58236850A JPS60128657A (ja) | 1983-12-15 | 1983-12-15 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60128657A JPS60128657A (ja) | 1985-07-09 |
| JPS6240868B2 true JPS6240868B2 (ko) | 1987-08-31 |
Family
ID=17006718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58236850A Granted JPS60128657A (ja) | 1983-12-15 | 1983-12-15 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS60128657A (ko) |
| KR (1) | KR890004764B1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0616549B2 (ja) * | 1984-04-17 | 1994-03-02 | 三菱電機株式会社 | 半導体集積回路装置 |
| JPH0650765B2 (ja) * | 1985-08-28 | 1994-06-29 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPS62189730A (ja) * | 1986-02-17 | 1987-08-19 | Toshiba Corp | 半導体装置の製造方法 |
| US4905065A (en) * | 1987-05-12 | 1990-02-27 | Advanced Micro Devices, Inc. | High density dram trench capacitor isolation employing double epitaxial layers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
| JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
| JPS58154256A (ja) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | 半導体装置 |
-
1983
- 1983-12-15 JP JP58236850A patent/JPS60128657A/ja active Granted
-
1984
- 1984-12-06 KR KR1019840007691A patent/KR890004764B1/ko not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
| JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
| JPS58154256A (ja) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR850004878A (ko) | 1985-07-27 |
| KR890004764B1 (ko) | 1989-11-25 |
| JPS60128657A (ja) | 1985-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4792834A (en) | Semiconductor memory device with buried layer under groove capacitor | |
| EP0175433B1 (en) | Mos dynamic ram and manufacturing method thereof | |
| US4958318A (en) | Sidewall capacitor DRAM cell | |
| US4873560A (en) | Dynamic random access memory having buried word lines | |
| JPH0793371B2 (ja) | 半導体装置及びその製造方法 | |
| US5428236A (en) | Semiconductor memory device having trenched capicitor | |
| US5136533A (en) | Sidewall capacitor DRAM cell | |
| KR900000635B1 (ko) | 반도체 기억장치 | |
| US4635085A (en) | Semiconductor memory device | |
| JP2671899B2 (ja) | 半導体記憶装置 | |
| KR890004765B1 (ko) | 반도체 기억장치 | |
| JPH0365664B2 (ko) | ||
| JPS6240868B2 (ko) | ||
| JPS6058663A (ja) | 電荷一時蓄積記憶装置 | |
| JP3511267B2 (ja) | 半導体ｄｒａｍ素子 | |
| JPS61140172A (ja) | 半導体記憶装置 | |
| JP2503661B2 (ja) | 半導体メモリ素子およびその製造方法 | |
| JP2554332B2 (ja) | １トランジスタ型ダイナミツクメモリセル | |
| JPS61199657A (ja) | 半導体記憶装置 | |
| JPS62131563A (ja) | 半導体メモリ装置 | |
| JPS61140171A (ja) | 半導体記憶装置 | |
| JPH0536930A (ja) | 半導体記憶装置 | |
| JPS60245273A (ja) | 半導体記憶装置 | |
| JPS6269549A (ja) | 半導体記憶素子とその製造方法 | |
| JPH04302470A (ja) | ダイナミック型半導体記憶装置 |