JPS6240837B2 - - Google Patents
Info
- Publication number
- JPS6240837B2 JPS6240837B2 JP56169616A JP16961681A JPS6240837B2 JP S6240837 B2 JPS6240837 B2 JP S6240837B2 JP 56169616 A JP56169616 A JP 56169616A JP 16961681 A JP16961681 A JP 16961681A JP S6240837 B2 JPS6240837 B2 JP S6240837B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- oxide film
- metal oxide
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 74
- 239000010409 thin film Substances 0.000 claims description 39
- 229910044991 metal oxide Inorganic materials 0.000 claims description 23
- 150000004706 metal oxides Chemical class 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 68
- 230000015556 catabolic process Effects 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- -1 Ta 2 O 5 Inorganic materials 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169616A JPS5871589A (ja) | 1981-10-22 | 1981-10-22 | 薄膜ｅｌ素子 |
| GB08600003A GB2167901B (en) | 1981-10-22 | 1982-10-21 | Thin-film electroluminescent display panel |
| GB08230029A GB2109161B (en) | 1981-10-22 | 1982-10-21 | Thin film electroluminescent display panels |
| US06/824,861 US4686110A (en) | 1981-10-22 | 1986-01-31 | Method for preparing a thin-film electroluminescent display panel comprising a thin metal oxide layer and thick dielectric layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169616A JPS5871589A (ja) | 1981-10-22 | 1981-10-22 | 薄膜ｅｌ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5871589A JPS5871589A (ja) | 1983-04-28 |
| JPS6240837B2 true JPS6240837B2 (US07534539-20090519-C00280.png) | 1987-08-31 |
Family
ID=15889794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169616A Granted JPS5871589A (ja) | 1981-10-22 | 1981-10-22 | 薄膜ｅｌ素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4686110A (US07534539-20090519-C00280.png) |
| JP (1) | JPS5871589A (US07534539-20090519-C00280.png) |
| GB (2) | GB2167901B (US07534539-20090519-C00280.png) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59181486A (ja) * | 1983-03-31 | 1984-10-15 | 高橋 清 | エレクトロルミネツセンス素子 |
| US4547702A (en) * | 1983-10-11 | 1985-10-15 | Gte Products Corporation | Thin film electroluminscent display device |
| CA1243762A (en) * | 1983-10-11 | 1988-10-25 | Martin P. Schrank | Thin film electroluminescent display device |
| EP0141116B1 (en) * | 1983-10-25 | 1989-02-01 | Sharp Kabushiki Kaisha | Thin film light emitting element |
| DE3561435D1 (en) * | 1984-03-23 | 1988-02-18 | Matsushita Electric Ind Co Ltd | Thin film el panel |
| US4794302A (en) * | 1986-01-08 | 1988-12-27 | Kabushiki Kaisha Komatsu Seisakusho | Thin film el device and method of manufacturing the same |
| DE3712855A1 (de) * | 1986-09-29 | 1988-04-07 | Ricoh Kk | Duennschicht-elektrolumineszenzvorrichtung |
| US4895734A (en) * | 1987-03-31 | 1990-01-23 | Hitachi Chemical Company, Ltd. | Process for forming insulating film used in thin film electroluminescent device |
| JPS6441194A (en) * | 1987-08-07 | 1989-02-13 | Komatsu Mfg Co Ltd | Manufacture of thin film electroluminescent element |
| JPH027390A (ja) * | 1988-06-27 | 1990-01-11 | Nippon Soken Inc | 薄膜エレクトロルミネセンス素子 |
| US5235246A (en) * | 1988-10-13 | 1993-08-10 | Nec Corporation | Electroluminescence panel |
| JPH0752673B2 (ja) * | 1989-01-18 | 1995-06-05 | シャープ株式会社 | 薄膜ｅｌ素子 |
| US5229628A (en) * | 1989-08-02 | 1993-07-20 | Nippon Sheet Glass Co., Ltd. | Electroluminescent device having sub-interlayers for high luminous efficiency with device life |
| US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
| DE69333722T2 (de) * | 1993-05-31 | 2005-12-08 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen |
| DE4333416C2 (de) * | 1993-09-30 | 1996-05-09 | Reinhard Dr Schwarz | Verfahren zur Herstellung von mikrokristallinen Schichten und deren Verwendung |
| DE4345229C2 (de) * | 1993-09-30 | 1998-04-09 | Reinhard Dr Schwarz | Verfahren zum Herstellen von lumineszenten Elementstrukturen und Elementstrukturen |
| US5435888A (en) * | 1993-12-06 | 1995-07-25 | Sgs-Thomson Microelectronics, Inc. | Enhanced planarization technique for an integrated circuit |
| US6284584B1 (en) * | 1993-12-17 | 2001-09-04 | Stmicroelectronics, Inc. | Method of masking for periphery salicidation of active regions |
| US6107194A (en) * | 1993-12-17 | 2000-08-22 | Stmicroelectronics, Inc. | Method of fabricating an integrated circuit |
| EP0720223B1 (en) * | 1994-12-30 | 2003-03-26 | STMicroelectronics S.r.l. | Process for the production of a semiconductor device having better interface adhesion between dielectric layers |
| US5958573A (en) * | 1997-02-10 | 1999-09-28 | Quantum Energy Technologies | Electroluminescent device having a structured particle electron conductor |
| US6771019B1 (en) * | 1999-05-14 | 2004-08-03 | Ifire Technology, Inc. | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties |
| AU2003235309A1 (en) * | 2002-05-17 | 2003-12-02 | Print Labo Co., Ltd. | El light emitting device |
| JP4551610B2 (ja) * | 2002-08-02 | 2010-09-29 | 富士フイルム株式会社 | デジタルカメラ |
| JP3730971B2 (ja) * | 2002-08-30 | 2006-01-05 | 株式会社トミー | Ｅｌ発光ディスプレイシステム |
| JP2004146340A (ja) * | 2002-08-30 | 2004-05-20 | Tomy Co Ltd | Ｅｌ発光シート |
| GB2393324A (en) * | 2002-08-30 | 2004-03-24 | Tomy Co Ltd | Electroluminescent display |
| US20040104671A1 (en) * | 2002-08-30 | 2004-06-03 | Tomy Company, Ltd. | Electroluminescence light emitting device and method for manufacturing the same |
| US20040041519A1 (en) * | 2002-08-30 | 2004-03-04 | Tomy Company, Ltd. | Electroluminescence light emitting display system |
| US7230277B2 (en) * | 2004-11-19 | 2007-06-12 | Macronix International Co., Ltd. | Method and apparatus for electroluminescence |
| TWI694748B (zh) * | 2019-08-28 | 2020-05-21 | 明志科技大學 | 用以產生大面積電漿之電極元件 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103982A (US07534539-20090519-C00280.png) * | 1974-01-14 | 1975-08-16 | ||
| JPS5835360A (ja) * | 1981-08-21 | 1983-03-02 | グラヴルベル | 複合鏡パネル |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4188565A (en) * | 1977-09-16 | 1980-02-12 | Sharp Kabushiki Kaisha | Oxygen atom containing film for a thin-film electroluminescent element |
| JPS5643742A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Manufacture of semiconductor |
| FI61983C (fi) * | 1981-02-23 | 1982-10-11 | Lohja Ab Oy | Tunnfilm-elektroluminensstruktur |
| FI62448C (fi) * | 1981-04-22 | 1982-12-10 | Lohja Ab Oy | Elektroluminensstruktur |
| JPS5823191A (ja) * | 1981-07-31 | 1983-02-10 | シャープ株式会社 | 薄膜ｅｌ素子 |
| US4455351A (en) * | 1983-06-13 | 1984-06-19 | At&T Bell Laboratories | Preparation of photodiodes |
-
1981
- 1981-10-22 JP JP56169616A patent/JPS5871589A/ja active Granted
-
1982
- 1982-10-21 GB GB08600003A patent/GB2167901B/en not_active Expired
- 1982-10-21 GB GB08230029A patent/GB2109161B/en not_active Expired
-
1986
- 1986-01-31 US US06/824,861 patent/US4686110A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103982A (US07534539-20090519-C00280.png) * | 1974-01-14 | 1975-08-16 | ||
| JPS5835360A (ja) * | 1981-08-21 | 1983-03-02 | グラヴルベル | 複合鏡パネル |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8600003D0 (en) | 1986-02-12 |
| GB2167901A (en) | 1986-06-04 |
| JPS5871589A (ja) | 1983-04-28 |
| GB2109161B (en) | 1986-10-08 |
| GB2109161A (en) | 1983-05-25 |
| US4686110A (en) | 1987-08-11 |
| GB2167901B (en) | 1986-12-03 |
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