JPS6240797B2 - - Google Patents
Info
- Publication number
- JPS6240797B2 JPS6240797B2 JP59036719A JP3671984A JPS6240797B2 JP S6240797 B2 JPS6240797 B2 JP S6240797B2 JP 59036719 A JP59036719 A JP 59036719A JP 3671984 A JP3671984 A JP 3671984A JP S6240797 B2 JPS6240797 B2 JP S6240797B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- spare
- row
- cell area
- decoder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59036719A JPS59185099A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59036719A JPS59185099A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体メモリ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55170526A Division JPS6051200B2 (ja) | 1980-12-03 | 1980-12-03 | 紫外線消去型不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59185099A JPS59185099A (ja) | 1984-10-20 |
JPS6240797B2 true JPS6240797B2 (enrdf_load_stackoverflow) | 1987-08-31 |
Family
ID=12477554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59036719A Granted JPS59185099A (ja) | 1984-02-28 | 1984-02-28 | 不揮発性半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59185099A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01145640U (enrdf_load_stackoverflow) * | 1988-03-17 | 1989-10-06 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2700640B2 (ja) * | 1986-09-24 | 1998-01-21 | 日立超エル・エス・アイ・エンジニアリング 株式会社 | 半導体記憶装置 |
JPH0218795A (ja) * | 1988-07-06 | 1990-01-23 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR940006922B1 (ko) * | 1991-07-11 | 1994-07-29 | 금성일렉트론 주식회사 | 반도체 메모리의 리던던시 회로 |
JP4781902B2 (ja) * | 2006-05-10 | 2011-09-28 | パナソニック株式会社 | 加圧接合装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384634A (en) * | 1976-12-30 | 1978-07-26 | Fujitsu Ltd | Ic memory unit device |
JPS551607A (en) * | 1978-06-16 | 1980-01-08 | Nec Corp | Read data correction system of mask read-only memory |
JPS55105898A (en) * | 1979-02-02 | 1980-08-13 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
-
1984
- 1984-02-28 JP JP59036719A patent/JPS59185099A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01145640U (enrdf_load_stackoverflow) * | 1988-03-17 | 1989-10-06 |
Also Published As
Publication number | Publication date |
---|---|
JPS59185099A (ja) | 1984-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5841721A (en) | Multi-block erase and verification circuit in a nonvolatile semiconductor memory device and a method thereof | |
US5097444A (en) | Tunnel EEPROM with overerase protection | |
US4858194A (en) | Nonvolatile semiconductor memory device using source of a single supply voltage | |
US4514830A (en) | Defect-remediable semiconductor integrated circuit memory and spare substitution method in the same | |
JPS6325981A (ja) | 電気的にブロツク消去可能なeeprom | |
JPH11177071A (ja) | 不揮発性半導体記憶装置 | |
US5652450A (en) | Nonvolatile semiconductor storage device | |
US4881201A (en) | Semiconductor integrated circuit device | |
KR20010055368A (ko) | 낸드형 플래쉬 메모리소자 및 그 구동방법 | |
KR100241993B1 (ko) | 과 소거 방지 수단을 가진 1트랜지스터 셸 플래쉬 메모리 어레이 | |
JPH08279297A (ja) | Nand構造の不揮発性半導体メモリとそのプログラム方法 | |
JPH10199265A (ja) | 半導体集積回路装置、半導体集積回路装置のデータ読み出し禁止方法および集積回路型記憶媒体システム | |
JP2002197883A (ja) | 不揮発性半導体メモリ装置 | |
JPS6312387B2 (enrdf_load_stackoverflow) | ||
JP3895816B2 (ja) | 不揮発性半導体記憶装置とその制御方法、メモリカード、及び記憶システム | |
JPS6034198B2 (ja) | 不揮発性メモリ | |
JP2785936B2 (ja) | 冗長回路のテスト方法 | |
US5684747A (en) | Method for erasing nonvolatile semiconductor memory device incorporating redundancy memory cells | |
JPS6240797B2 (enrdf_load_stackoverflow) | ||
JPH1196776A (ja) | 不揮発性半導体メモリ装置 | |
US6137315A (en) | Drive circuit for a non-volatile semiconductor storage configuration | |
JPH0757486A (ja) | Nand型不揮発性メモリの駆動方法 | |
JPS6051200B2 (ja) | 紫外線消去型不揮発性半導体メモリ | |
WO1992016946A1 (fr) | Memoire a semi-conducteur dotee d'une cellule de memoire remanente a semi-conducteur | |
US6088287A (en) | Flash memory architecture employing three layer metal interconnect for word line decoding |