JPS6239825B2 - - Google Patents

Info

Publication number
JPS6239825B2
JPS6239825B2 JP56176799A JP17679981A JPS6239825B2 JP S6239825 B2 JPS6239825 B2 JP S6239825B2 JP 56176799 A JP56176799 A JP 56176799A JP 17679981 A JP17679981 A JP 17679981A JP S6239825 B2 JPS6239825 B2 JP S6239825B2
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor
heat dissipation
external lead
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56176799A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5878443A (ja
Inventor
Takashi Myamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56176799A priority Critical patent/JPS5878443A/ja
Publication of JPS5878443A publication Critical patent/JPS5878443A/ja
Publication of JPS6239825B2 publication Critical patent/JPS6239825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
JP56176799A 1981-11-04 1981-11-04 半導体装置の製造方法 Granted JPS5878443A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56176799A JPS5878443A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56176799A JPS5878443A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5878443A JPS5878443A (ja) 1983-05-12
JPS6239825B2 true JPS6239825B2 (enrdf_load_stackoverflow) 1987-08-25

Family

ID=16020039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56176799A Granted JPS5878443A (ja) 1981-11-04 1981-11-04 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5878443A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081843A (ja) * 1983-10-12 1985-05-09 Fujitsu Ltd マイクロ波筐体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114874A (en) * 1975-04-02 1976-10-08 Hitachi Ltd Semiconductor device formation method
JPS577835A (en) * 1980-06-19 1982-01-16 Hitachi Cable Ltd Manufacture of base material for optical fiber

Also Published As

Publication number Publication date
JPS5878443A (ja) 1983-05-12

Similar Documents

Publication Publication Date Title
JP3596388B2 (ja) 半導体装置
JP2548350B2 (ja) テープ自動結合に使用される熱放散相互接続テープ
CA1114936A (en) All metal flat package
JPH11195680A (ja) 半導体装置接続構造及び接続方法
KR100414254B1 (ko) 수지봉지형반도체장치및그제조방법
JPS59130449A (ja) 絶縁型半導体素子用リードフレーム
US5942796A (en) Package structure for high-power surface-mounted electronic devices
JP2725448B2 (ja) 半導体装置
JP2000183222A (ja) 半導体装置およびその製造方法
JPS6239825B2 (enrdf_load_stackoverflow)
JP2002270906A (ja) 熱電モジュール
US20070126117A1 (en) Semiconductor module and manufacturing method thereof
JPH083009Y2 (ja) 半導体素子収納用パッケージ
JP4920214B2 (ja) 電子部品用パッケージとその製造方法
CN219017629U (zh) 一种气密封装功放模块
JPS6220701B2 (enrdf_load_stackoverflow)
JP2870501B2 (ja) 半導体装置
JP2770664B2 (ja) 半導体装置及びその製造方法
JP3086305B2 (ja) センサー及びその製造方法
JPS63169749A (ja) 半導体装置
JP3036484B2 (ja) 半導体装置とその製造方法
JPS607494Y2 (ja) 半導体装置
JPH03292761A (ja) チップキャリヤ
JPH085563Y2 (ja) 高電力ハイブリッドic用金属パッケージ
JPH0492458A (ja) 放熱体の製造方法