JPS6231340B2 - - Google Patents
Info
- Publication number
- JPS6231340B2 JPS6231340B2 JP874478A JP874478A JPS6231340B2 JP S6231340 B2 JPS6231340 B2 JP S6231340B2 JP 874478 A JP874478 A JP 874478A JP 874478 A JP874478 A JP 874478A JP S6231340 B2 JPS6231340 B2 JP S6231340B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- development
- developer
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 56
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000007788 liquid Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Photographic Processing Devices Using Wet Methods (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP874478A JPS54102123A (en) | 1978-01-27 | 1978-01-27 | Developing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP874478A JPS54102123A (en) | 1978-01-27 | 1978-01-27 | Developing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54102123A JPS54102123A (en) | 1979-08-11 |
JPS6231340B2 true JPS6231340B2 (enrdf_load_stackoverflow) | 1987-07-08 |
Family
ID=11701436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP874478A Granted JPS54102123A (en) | 1978-01-27 | 1978-01-27 | Developing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54102123A (enrdf_load_stackoverflow) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5633834A (en) * | 1979-08-29 | 1981-04-04 | Toshiba Corp | Manufacturing device of semiconductor |
JPS5645022A (en) * | 1979-09-21 | 1981-04-24 | Hitachi Ltd | Developing method for photo resist |
JPS56110933A (en) * | 1980-01-25 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Developing method |
JPS5950440A (ja) * | 1982-09-16 | 1984-03-23 | Fujitsu Ltd | レジスト膜の現像方法 |
JPS5963726A (ja) * | 1982-10-05 | 1984-04-11 | Toshiba Corp | ホトレジスト現像装置 |
JPS5978343A (ja) * | 1982-10-28 | 1984-05-07 | Fujitsu Ltd | レジスト膜の現像方法 |
JPS5978342A (ja) * | 1982-10-28 | 1984-05-07 | Fujitsu Ltd | レジスト膜の現像方法 |
US4564280A (en) * | 1982-10-28 | 1986-01-14 | Fujitsu Limited | Method and apparatus for developing resist film including a movable nozzle arm |
JPS60103830U (ja) * | 1983-12-20 | 1985-07-15 | 株式会社東芝 | 回転現像装置 |
JPH0695401B2 (ja) * | 1984-02-27 | 1994-11-24 | 株式会社日立製作所 | 光ディスクのスピン現像方法及び装置 |
JPS61276323A (ja) * | 1985-05-31 | 1986-12-06 | Toshiba Corp | レジストパタ−ンの形成方法 |
JPS6230336U (enrdf_load_stackoverflow) * | 1985-08-07 | 1987-02-24 | ||
JPS62229837A (ja) * | 1986-03-29 | 1987-10-08 | Toshiba Corp | レジスト現像方法および装置 |
US5270762A (en) * | 1992-03-02 | 1993-12-14 | Eastman Kodak Company | Slot impingement for a photographic processing apparatus |
JP4312997B2 (ja) * | 2002-06-04 | 2009-08-12 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びノズル |
-
1978
- 1978-01-27 JP JP874478A patent/JPS54102123A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54102123A (en) | 1979-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6231340B2 (enrdf_load_stackoverflow) | ||
US11150558B2 (en) | Developing method | |
JP4937678B2 (ja) | 基板処理方法および基板処理装置 | |
JPS6053305B2 (ja) | 現像方法 | |
JPS623971B2 (enrdf_load_stackoverflow) | ||
JPH09251953A (ja) | レジスト現像方法 | |
JP2004152849A (ja) | 液処理装置及び液処理方法 | |
US20120162618A1 (en) | Substrate processing device and method | |
TW200532749A (en) | Rinse nozzle and method | |
JPH09244258A (ja) | レジスト現像方法 | |
JPS62185322A (ja) | フオトレジスト塗布装置 | |
JPS6328298B2 (enrdf_load_stackoverflow) | ||
JP2010278204A (ja) | レジストパターンの形成方法 | |
JP2537611B2 (ja) | 塗布材料の塗布装置 | |
US20210349393A1 (en) | Method for improving uniformity of photoresist development | |
KR100644051B1 (ko) | 포토 레지스트 코팅 장치 및 이를 이용한 웨이퍼 이물 제거방법 | |
JPH10199791A (ja) | 半導体装置の製造方法及びその製造装置 | |
JPS6329406B2 (enrdf_load_stackoverflow) | ||
JPH088207B2 (ja) | スプレー現像方法 | |
KR20010009035A (ko) | 감광막 현상방법 | |
KR100801841B1 (ko) | 감광막 현상 장치 | |
CN118904670A (zh) | 光致抗蚀剂的涂布制作工艺 | |
KR20060078513A (ko) | 반도체 웨이퍼 현상장치 | |
KR100826095B1 (ko) | 반도체 제조용 현상장치 | |
KR100545217B1 (ko) | 반도체 웨이퍼 현상설비 및 현상 방법 |