JPS5633834A - Manufacturing device of semiconductor - Google Patents
Manufacturing device of semiconductorInfo
- Publication number
- JPS5633834A JPS5633834A JP11004679A JP11004679A JPS5633834A JP S5633834 A JPS5633834 A JP S5633834A JP 11004679 A JP11004679 A JP 11004679A JP 11004679 A JP11004679 A JP 11004679A JP S5633834 A JPS5633834 A JP S5633834A
- Authority
- JP
- Japan
- Prior art keywords
- developing solution
- solution
- rotary head
- temperature
- sprayed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photographic Processing Devices Using Wet Methods (AREA)
Abstract
PURPOSE:To always maintain the temperature of a developing solution at an optimum temperature and to reduce a using amount of the developing solution by intermittently controlling the developing solution wherein the developing solution is showery sprayed to the semiconductor wafer having a resist surface installed on a rotary head rotating at a low speed. CONSTITUTION:The semiconductor wafer 13 having the resist surface treated by exposure is installed on the rotary head 12 and the rotary head 12 is rotated at a low-speed rotation with small centrifugal force. (For example, 50-100rpm). And the developing solution is showerly sprayed to the wafer 13 from a storage section 15 for treatment solution through a valve 16 and a nozzle 19. In this case, the quantity of flow is intermittently controlled. In this way, a decrease in solution temperature by evaporation of the developing solution is prevented compared to a conventional method of sprinkling a sprayed developing solution to the wafer on the rotary head rotating at a high speed and the solution temperature on the resist surface is always maintained at an optimum state. The spray of the developing solution is also prevented to reduce the using amount to about half.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11004679A JPS5633834A (en) | 1979-08-29 | 1979-08-29 | Manufacturing device of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11004679A JPS5633834A (en) | 1979-08-29 | 1979-08-29 | Manufacturing device of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5633834A true JPS5633834A (en) | 1981-04-04 |
JPS6329406B2 JPS6329406B2 (en) | 1988-06-14 |
Family
ID=14525727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11004679A Granted JPS5633834A (en) | 1979-08-29 | 1979-08-29 | Manufacturing device of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633834A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276323A (en) * | 1985-05-31 | 1986-12-06 | Toshiba Corp | Forming method for resist pattern |
JPS6281715A (en) * | 1985-10-07 | 1987-04-15 | Nec Kyushu Ltd | Semiconductor manufacturing equipment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54102123A (en) * | 1978-01-27 | 1979-08-11 | Matsushita Electric Ind Co Ltd | Developing method |
JPS54103034A (en) * | 1978-01-30 | 1979-08-14 | Matsushita Electric Ind Co Ltd | Automatic developer |
-
1979
- 1979-08-29 JP JP11004679A patent/JPS5633834A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54102123A (en) * | 1978-01-27 | 1979-08-11 | Matsushita Electric Ind Co Ltd | Developing method |
JPS54103034A (en) * | 1978-01-30 | 1979-08-14 | Matsushita Electric Ind Co Ltd | Automatic developer |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276323A (en) * | 1985-05-31 | 1986-12-06 | Toshiba Corp | Forming method for resist pattern |
JPS6281715A (en) * | 1985-10-07 | 1987-04-15 | Nec Kyushu Ltd | Semiconductor manufacturing equipment |
JPH0350410B2 (en) * | 1985-10-07 | 1991-08-01 | Kyushu Nippon Electric |
Also Published As
Publication number | Publication date |
---|---|
JPS6329406B2 (en) | 1988-06-14 |
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