JPS6230512B2 - - Google Patents

Info

Publication number
JPS6230512B2
JPS6230512B2 JP53125682A JP12568278A JPS6230512B2 JP S6230512 B2 JPS6230512 B2 JP S6230512B2 JP 53125682 A JP53125682 A JP 53125682A JP 12568278 A JP12568278 A JP 12568278A JP S6230512 B2 JPS6230512 B2 JP S6230512B2
Authority
JP
Japan
Prior art keywords
amorphous
amorphous semiconductor
host matrix
semiconductor material
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53125682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5464981A (en
Inventor
Robaato Obushinsukii Sutanfuoodo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS5464981A publication Critical patent/JPS5464981A/ja
Publication of JPS6230512B2 publication Critical patent/JPS6230512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
JP12568278A 1977-10-12 1978-10-12 High temperature amorphous semiconductor member and method of producing same Granted JPS5464981A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (2)

Publication Number Publication Date
JPS5464981A JPS5464981A (en) 1979-05-25
JPS6230512B2 true JPS6230512B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-07-02

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12568278A Granted JPS5464981A (en) 1977-10-12 1978-10-12 High temperature amorphous semiconductor member and method of producing same

Country Status (7)

Country Link
JP (1) JPS5464981A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU523107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1123525A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2844070A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES474153A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2454186A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2007021B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010531062A (ja) * 2007-06-22 2010-09-16 オヴォニクス，インコーポレイテッド 改善動作特性を有する多層カルコゲナイド及び関連デバイス

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
IL63754A (en) * 1980-09-09 1984-07-31 Energy Conversion Devices Inc Photoresponsive amorphous alloys having a graded band gap,their production and devices made therefrom
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
EP0070509B2 (en) * 1981-07-17 1993-05-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor and amorphous silicon photovoltaic device
EP0072221B1 (en) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Non-volatile electrically programmable memory device
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPH07105507B2 (ja) * 1982-02-25 1995-11-13 プラズマ・フィジクス・コ−ポレ−ション 光起電力装置
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
ES534427A0 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JP2648733B2 (ja) * 1993-11-18 1997-09-03 プラズマ・フィジクス・コーポレーション 半導体装置
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PHILOSMAG=1977 *
SOLIDSTATECOMMUN=1975 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010531062A (ja) * 2007-06-22 2010-09-16 オヴォニクス，インコーポレイテッド 改善動作特性を有する多層カルコゲナイド及び関連デバイス

Also Published As

Publication number Publication date
FR2454186A1 (fr) 1980-11-07
FR2454186B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-08-24
ES474153A1 (es) 1979-10-16
GB2007021B (en) 1982-05-06
CA1123525A (en) 1982-05-11
AU4023778A (en) 1980-04-03
GB2007021A (en) 1979-05-10
DE2844070A1 (de) 1979-04-26
AU523107B2 (en) 1982-07-15
JPS5464981A (en) 1979-05-25
DE2844070C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-01

Similar Documents

Publication Publication Date Title
US4177474A (en) High temperature amorphous semiconductor member and method of making the same
JPS6230512B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4177473A (en) Amorphous semiconductor member and method of making the same
US4077818A (en) Process for utilizing low-cost graphite substrates for polycrystalline solar cells
US6838308B2 (en) Semiconductor polysilicon component and method of manufacture thereof
JP3822238B2 (ja) 多層太陽電池の製造方法
US6896731B1 (en) P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
US20160293790A1 (en) Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
US4520380A (en) Amorphous semiconductors equivalent to crystalline semiconductors
US4710786A (en) Wide band gap semiconductor alloy material
US4839312A (en) Fluorinated precursors from which to fabricate amorphous semiconductor material
JPS6248390B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2854038B2 (ja) 半導体素子
JP6044907B2 (ja) 半導体コンタクト構造及びその形成方法
US20150263201A1 (en) Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
US6677515B2 (en) High performance thermoelectric material and method of fabrication
JP3181074B2 (ja) Ｃｕ系カルコパイライト膜の製造方法
JPH0476217B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2675174B2 (ja) 太陽電池の製造方法
JPH0284773A (ja) 薄膜トランジスタ及びその製造方法
US20230066135A1 (en) Semiconductor device
JPH10214790A (ja) シリコン系半導体薄膜の製造方法
KR102690300B1 (ko) 전이금속 칼코젠 화합물 및 그 제조방법
JP2649221B2 (ja) 堆積膜形成法
JPS58212178A (ja) 薄膜電界効果トランジスタおよびその製造方法