ES474153A1 - Mejoras introducidas en un elemento semiconductor amorfo - Google Patents

Mejoras introducidas en un elemento semiconductor amorfo

Info

Publication number
ES474153A1
ES474153A1 ES474153A ES474153A ES474153A1 ES 474153 A1 ES474153 A1 ES 474153A1 ES 474153 A ES474153 A ES 474153A ES 474153 A ES474153 A ES 474153A ES 474153 A1 ES474153 A1 ES 474153A1
Authority
ES
Spain
Prior art keywords
amorphous
receiving matrix
configurations
amorphous semiconductor
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES474153A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/841,369 external-priority patent/US4177474A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES474153A1 publication Critical patent/ES474153A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Light Receiving Elements (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)

Abstract

Mejoras introducidas en un elemento conductor amorfo constituido por un material semiconductor amorgo caracterizadas porque incluyen una composición de una pluralidad de elementos, de los cuales uno por lo menos es un elemento de peso atómico constituido por boro, carbono, nitrógeno y oxígeno, que tiene la forma de una matriz de recepción amorfa sólida teniendo configuraciones estructurales de orden localizada en lugar de largo alcance y configuraciones electrónicas que proporcionan un intervalo de energía y una energía eléctrica de activación, y un material modificador añadido a dicha matriz de recepción amorfa y que tiene órbitas que reaccionan con la matriz de recepción amorfa y forman en el intervalo de energía estados electrónicos que modifican sustancialmente las configuraciones electrónicas de la matriz de recepción amorfa a la temperatura ambiente y a temperaturas superiores.
ES474153A 1977-10-12 1978-10-11 Mejoras introducidas en un elemento semiconductor amorfo Expired ES474153A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/841,369 US4177474A (en) 1977-05-18 1977-10-12 High temperature amorphous semiconductor member and method of making the same

Publications (1)

Publication Number Publication Date
ES474153A1 true ES474153A1 (es) 1979-10-16

Family

ID=25284694

Family Applications (1)

Application Number Title Priority Date Filing Date
ES474153A Expired ES474153A1 (es) 1977-10-12 1978-10-11 Mejoras introducidas en un elemento semiconductor amorfo

Country Status (7)

Country Link
JP (1) JPS5464981A (es)
AU (1) AU523107B2 (es)
CA (1) CA1123525A (es)
DE (1) DE2844070A1 (es)
ES (1) ES474153A1 (es)
FR (1) FR2454186A1 (es)
GB (1) GB2007021B (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
KR890000478B1 (ko) * 1980-09-09 1989-03-18 에너지 컨버션 디바이시즈, 인코포레이리드 비정질합금의 제조방법
CA1176740A (en) * 1980-12-03 1984-10-23 Yoshihisa Tawada High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
DE3280112D1 (de) * 1981-07-17 1990-03-15 Kanegafuchi Chemical Ind Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
JPS62162366A (ja) * 1981-09-17 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPH07105507B2 (ja) * 1982-02-25 1995-11-13 プラズマ・フィジクス・コ−ポレ−ション 光起電力装置
DE3314197A1 (de) * 1982-04-28 1983-11-03 Energy Conversion Devices, Inc., 48084 Troy, Mich. P-leitende amorphe siliziumlegierung mit grossem bandabstand und herstellungsverfahren dafuer
JPS5957407A (ja) * 1982-09-27 1984-04-03 Sanyo Electric Co Ltd 光起電力装置
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
JPS58180074A (ja) * 1983-03-28 1983-10-21 Shunpei Yamazaki 光電変換半導体装置
ES8602301A1 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS6316678A (ja) * 1986-12-26 1988-01-23 Shunpei Yamazaki 光電変換装置
JP2648733B2 (ja) * 1993-11-18 1997-09-03 プラズマ・フィジクス・コーポレーション 半導体装置
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same

Also Published As

Publication number Publication date
FR2454186B1 (es) 1984-08-24
CA1123525A (en) 1982-05-11
FR2454186A1 (fr) 1980-11-07
GB2007021A (en) 1979-05-10
JPS5464981A (en) 1979-05-25
DE2844070A1 (de) 1979-04-26
AU523107B2 (en) 1982-07-15
AU4023778A (en) 1980-04-03
GB2007021B (en) 1982-05-06
JPS6230512B2 (es) 1987-07-02
DE2844070C2 (es) 1990-02-01

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20001204