JPS6229904B2 - - Google Patents

Info

Publication number
JPS6229904B2
JPS6229904B2 JP51090783A JP9078376A JPS6229904B2 JP S6229904 B2 JPS6229904 B2 JP S6229904B2 JP 51090783 A JP51090783 A JP 51090783A JP 9078376 A JP9078376 A JP 9078376A JP S6229904 B2 JPS6229904 B2 JP S6229904B2
Authority
JP
Japan
Prior art keywords
region
type
layer
conductivity type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51090783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5218178A (en
Inventor
Ii Horinsu Burian
Teii Neruson Kaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/600,814 external-priority patent/US4046605A/en
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JPS5218178A publication Critical patent/JPS5218178A/ja
Publication of JPS6229904B2 publication Critical patent/JPS6229904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10W20/021—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP51090783A 1975-07-31 1976-07-29 Monolithic ic transistor having low collector resistance and method of producing same Granted JPS5218178A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/600,814 US4046605A (en) 1974-01-14 1975-07-31 Method of electrically isolating individual semiconductor circuits in a wafer

Publications (2)

Publication Number Publication Date
JPS5218178A JPS5218178A (en) 1977-02-10
JPS6229904B2 true JPS6229904B2 (ref) 1987-06-29

Family

ID=24405148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51090783A Granted JPS5218178A (en) 1975-07-31 1976-07-29 Monolithic ic transistor having low collector resistance and method of producing same

Country Status (5)

Country Link
US (1) US4110782A (ref)
JP (1) JPS5218178A (ref)
CA (1) CA1047652A (ref)
DE (1) DE2633569A1 (ref)
FR (1) FR2319973A1 (ref)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445626A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Transistor pour circuit integre
JPS5623770A (en) * 1979-08-06 1981-03-06 Toshiba Corp Manufacture of semiconductor device
JPS5690554A (en) * 1979-12-22 1981-07-22 Toshiba Corp Semiconductor device
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
WO1984001053A1 (fr) * 1982-08-26 1984-03-15 Mitsubishi Electric Corp Dispositif a semiconducteurs
US5055418A (en) * 1987-07-29 1991-10-08 National Semiconductor Corporation Process for fabricating complementary contactless vertical bipolar transistors
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process
JPH03179772A (ja) * 1989-12-08 1991-08-05 Toshiba Corp 半導体装置
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
JP2647057B2 (ja) * 1995-06-02 1997-08-27 日本電気株式会社 半導体装置
US6830959B2 (en) * 2002-01-22 2004-12-14 Fairchild Semiconductor Corporation Semiconductor die package with semiconductor die having side electrical connection
DE10250204B8 (de) * 2002-10-28 2008-09-11 Infineon Technologies Ag Verfahren zur Herstellung von Kollektorbereichen einer Transistorstruktur
US6841437B1 (en) * 2003-06-20 2005-01-11 Semiconductor Components Industries, L.L.C. Method of forming a vertical power semiconductor device and structure therefor
US7501693B2 (en) * 2006-11-17 2009-03-10 Micrel, Inc. LDO regulator with ground connection through package bottom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置
DE2306842C3 (de) * 1973-02-12 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen einer Vielzahl von Halbleiterelementen aus einer einzigen Halbleiterscheibe
JPS50104574A (ref) * 1974-01-14 1975-08-18

Also Published As

Publication number Publication date
US4110782A (en) 1978-08-29
JPS5218178A (en) 1977-02-10
FR2319973A1 (fr) 1977-02-25
CA1047652A (en) 1979-01-30
DE2633569C2 (ref) 1987-05-27
DE2633569A1 (de) 1977-03-24

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