JPS6228587B2 - - Google Patents

Info

Publication number
JPS6228587B2
JPS6228587B2 JP53063415A JP6341578A JPS6228587B2 JP S6228587 B2 JPS6228587 B2 JP S6228587B2 JP 53063415 A JP53063415 A JP 53063415A JP 6341578 A JP6341578 A JP 6341578A JP S6228587 B2 JPS6228587 B2 JP S6228587B2
Authority
JP
Japan
Prior art keywords
electrode layer
insulating film
forming
opening
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53063415A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54154966A (en
Inventor
Hisakazu Mukai
Tetsushi Sakai
Yasusuke Yamamoto
Yoshiharu Kobayashi
Hiroki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6341578A priority Critical patent/JPS54154966A/ja
Publication of JPS54154966A publication Critical patent/JPS54154966A/ja
Publication of JPS6228587B2 publication Critical patent/JPS6228587B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP6341578A 1978-05-29 1978-05-29 Semiconductor electron device Granted JPS54154966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341578A JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341578A JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Publications (2)

Publication Number Publication Date
JPS54154966A JPS54154966A (en) 1979-12-06
JPS6228587B2 true JPS6228587B2 (enrdf_load_html_response) 1987-06-22

Family

ID=13228627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341578A Granted JPS54154966A (en) 1978-05-29 1978-05-29 Semiconductor electron device

Country Status (1)

Country Link
JP (1) JPS54154966A (enrdf_load_html_response)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211251A (en) * 1981-06-23 1982-12-25 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS59217327A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 半導体装置の製造方法
JPH0618235B2 (ja) * 1985-12-24 1994-03-09 ロ−ム株式会社 半導体装置
JP2641856B2 (ja) * 1987-02-23 1997-08-20 日本電気株式会社 半導体装置の製造方法
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes
JPS5242670B2 (enrdf_load_html_response) * 1973-12-12 1977-10-26
JPS5227355A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Diffusion layer formation method
JPS534469A (en) * 1977-05-26 1978-01-17 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS54154966A (en) 1979-12-06

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