JPS6225459A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS6225459A
JPS6225459A JP60164781A JP16478185A JPS6225459A JP S6225459 A JPS6225459 A JP S6225459A JP 60164781 A JP60164781 A JP 60164781A JP 16478185 A JP16478185 A JP 16478185A JP S6225459 A JPS6225459 A JP S6225459A
Authority
JP
Japan
Prior art keywords
region
impurity
layer
floating gate
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60164781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587030B2 (enrdf_load_html_response
Inventor
Tetsuo Fujii
哲夫 藤井
Toshio Sakakibara
利夫 榊原
Nobuyoshi Sakakibara
伸義 榊原
Yutaka Iwasaki
裕 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP60164781A priority Critical patent/JPS6225459A/ja
Priority to US06/887,625 priority patent/US4774556A/en
Publication of JPS6225459A publication Critical patent/JPS6225459A/ja
Publication of JPH0587030B2 publication Critical patent/JPH0587030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Non-Volatile Memory (AREA)
JP60164781A 1985-07-25 1985-07-25 不揮発性半導体記憶装置 Granted JPS6225459A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60164781A JPS6225459A (ja) 1985-07-25 1985-07-25 不揮発性半導体記憶装置
US06/887,625 US4774556A (en) 1985-07-25 1986-07-21 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60164781A JPS6225459A (ja) 1985-07-25 1985-07-25 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6225459A true JPS6225459A (ja) 1987-02-03
JPH0587030B2 JPH0587030B2 (enrdf_load_html_response) 1993-12-15

Family

ID=15799825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60164781A Granted JPS6225459A (ja) 1985-07-25 1985-07-25 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6225459A (enrdf_load_html_response)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269363A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体記憶装置の製造方法
JPS645071A (en) * 1987-06-29 1989-01-10 Toshiba Corp Semiconductor storage device
JPS6453577A (en) * 1987-08-25 1989-03-01 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof
US6157061A (en) * 1997-08-29 2000-12-05 Nec Corporation Nonvolatile semiconductor memory device and method of manufacturing the same
KR100346021B1 (ko) * 1997-06-27 2002-09-18 닛본 덴기 가부시끼가이샤 불휘발성반도체메모리
JP2006128703A (ja) * 2004-10-28 2006-05-18 Samsung Electronics Co Ltd マルチビット不揮発性メモリセルを含む半導体素子及びその製造方法
JP2007235120A (ja) * 2006-02-03 2007-09-13 Denso Corp 半導体装置
JP2008141196A (ja) * 2006-11-30 2008-06-19 Dongbu Hitek Co Ltd フラッシュメモリ素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269363A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体記憶装置の製造方法
JPS645071A (en) * 1987-06-29 1989-01-10 Toshiba Corp Semiconductor storage device
JPS6453577A (en) * 1987-08-25 1989-03-01 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof
KR100346021B1 (ko) * 1997-06-27 2002-09-18 닛본 덴기 가부시끼가이샤 불휘발성반도체메모리
US6157061A (en) * 1997-08-29 2000-12-05 Nec Corporation Nonvolatile semiconductor memory device and method of manufacturing the same
JP2006128703A (ja) * 2004-10-28 2006-05-18 Samsung Electronics Co Ltd マルチビット不揮発性メモリセルを含む半導体素子及びその製造方法
JP2007235120A (ja) * 2006-02-03 2007-09-13 Denso Corp 半導体装置
JP2008141196A (ja) * 2006-11-30 2008-06-19 Dongbu Hitek Co Ltd フラッシュメモリ素子

Also Published As

Publication number Publication date
JPH0587030B2 (enrdf_load_html_response) 1993-12-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term