JPS6225253B2 - - Google Patents
Info
- Publication number
- JPS6225253B2 JPS6225253B2 JP3519877A JP3519877A JPS6225253B2 JP S6225253 B2 JPS6225253 B2 JP S6225253B2 JP 3519877 A JP3519877 A JP 3519877A JP 3519877 A JP3519877 A JP 3519877A JP S6225253 B2 JPS6225253 B2 JP S6225253B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- support jig
- phase reaction
- substrate support
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 238000010574 gas phase reaction Methods 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3519877A JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3519877A JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53121463A JPS53121463A (en) | 1978-10-23 |
| JPS6225253B2 true JPS6225253B2 (en, 2012) | 1987-06-02 |
Family
ID=12435156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3519877A Granted JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53121463A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197762U (en, 2012) * | 1987-06-12 | 1988-12-20 |
-
1977
- 1977-03-31 JP JP3519877A patent/JPS53121463A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197762U (en, 2012) * | 1987-06-12 | 1988-12-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53121463A (en) | 1978-10-23 |
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