JPS6225251B2 - - Google Patents

Info

Publication number
JPS6225251B2
JPS6225251B2 JP13454880A JP13454880A JPS6225251B2 JP S6225251 B2 JPS6225251 B2 JP S6225251B2 JP 13454880 A JP13454880 A JP 13454880A JP 13454880 A JP13454880 A JP 13454880A JP S6225251 B2 JPS6225251 B2 JP S6225251B2
Authority
JP
Japan
Prior art keywords
layer
window
heat treatment
polysilicon
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13454880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5759322A (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13454880A priority Critical patent/JPS5759322A/ja
Publication of JPS5759322A publication Critical patent/JPS5759322A/ja
Publication of JPS6225251B2 publication Critical patent/JPS6225251B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP13454880A 1980-09-27 1980-09-27 Manufacture of semiconductor device Granted JPS5759322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13454880A JPS5759322A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13454880A JPS5759322A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5759322A JPS5759322A (en) 1982-04-09
JPS6225251B2 true JPS6225251B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=15130885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13454880A Granted JPS5759322A (en) 1980-09-27 1980-09-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759322A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5759322A (en) 1982-04-09

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