JPS62250671A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62250671A
JPS62250671A JP9325086A JP9325086A JPS62250671A JP S62250671 A JPS62250671 A JP S62250671A JP 9325086 A JP9325086 A JP 9325086A JP 9325086 A JP9325086 A JP 9325086A JP S62250671 A JPS62250671 A JP S62250671A
Authority
JP
Japan
Prior art keywords
oxide film
region
gate electrode
island
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9325086A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0575187B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hatano
裕 波多野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP9325086A priority Critical patent/JPS62250671A/ja
Publication of JPS62250671A publication Critical patent/JPS62250671A/ja
Publication of JPH0575187B2 publication Critical patent/JPH0575187B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
JP9325086A 1986-04-24 1986-04-24 半導体装置 Granted JPS62250671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9325086A JPS62250671A (ja) 1986-04-24 1986-04-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9325086A JPS62250671A (ja) 1986-04-24 1986-04-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS62250671A true JPS62250671A (ja) 1987-10-31
JPH0575187B2 JPH0575187B2 (enrdf_load_stackoverflow) 1993-10-20

Family

ID=14077258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9325086A Granted JPS62250671A (ja) 1986-04-24 1986-04-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS62250671A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228174A (ja) * 1988-03-08 1989-09-12 Nec Corp 半導体装置
JPH01293667A (ja) * 1988-05-23 1989-11-27 Nec Corp Ｍｏｓ電界効果トランジスタ
US5144394A (en) * 1989-09-01 1992-09-01 Hitachi, Ltd. Semiconductor device and method for fabricating same
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
JPH07106571A (ja) * 1993-10-08 1995-04-21 Nec Corp 半導体装置
JP2007523481A (ja) * 2004-02-17 2007-08-16 シリコン・スペース・テクノロジー・コーポレイション 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法
WO2007108104A1 (ja) * 2006-03-20 2007-09-27 Fujitsu Limited 半導体装置及びその製造方法
US8252642B2 (en) 2005-10-14 2012-08-28 Silicon Space Technology Corp. Fabrication methods for radiation hardened isolation structures
CN108231883A (zh) * 2016-12-15 2018-06-29 财团法人工业技术研究院 晶体管装置
US10038058B2 (en) 2016-05-07 2018-07-31 Silicon Space Technology Corporation FinFET device structure and method for forming same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154570A (ja) * 1984-01-24 1985-08-14 Nec Corp 耐放射線性の強化された半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154570A (ja) * 1984-01-24 1985-08-14 Nec Corp 耐放射線性の強化された半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228174A (ja) * 1988-03-08 1989-09-12 Nec Corp 半導体装置
JPH01293667A (ja) * 1988-05-23 1989-11-27 Nec Corp Ｍｏｓ電界効果トランジスタ
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
US5144394A (en) * 1989-09-01 1992-09-01 Hitachi, Ltd. Semiconductor device and method for fabricating same
JPH07106571A (ja) * 1993-10-08 1995-04-21 Nec Corp 半導体装置
US5498894A (en) * 1993-10-08 1996-03-12 Nec Corporation Semiconductor device
US8093145B2 (en) 2004-02-17 2012-01-10 Silicon Space Technology Corp. Methods for operating and fabricating a semiconductor device having a buried guard ring structure
JP2007523481A (ja) * 2004-02-17 2007-08-16 シリコン・スペース・テクノロジー・コーポレイション 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法
US8497195B2 (en) 2004-02-17 2013-07-30 Silicon Space Technology Corporation Method for radiation hardening a semiconductor device
US8729640B2 (en) 2004-02-17 2014-05-20 Silicon Space Technology Corporation Method and structure for radiation hardening a semiconductor device
US8252642B2 (en) 2005-10-14 2012-08-28 Silicon Space Technology Corp. Fabrication methods for radiation hardened isolation structures
US8278719B2 (en) 2005-10-14 2012-10-02 Silicon Space Technology Corp. Radiation hardened isolation structures and fabrication methods
WO2007108104A1 (ja) * 2006-03-20 2007-09-27 Fujitsu Limited 半導体装置及びその製造方法
US10038058B2 (en) 2016-05-07 2018-07-31 Silicon Space Technology Corporation FinFET device structure and method for forming same
US10615260B1 (en) 2016-05-07 2020-04-07 Silicon Space Technology Corporation Method for forming FinFET device structure
CN108231883A (zh) * 2016-12-15 2018-06-29 财团法人工业技术研究院 晶体管装置

Also Published As

Publication number Publication date
JPH0575187B2 (enrdf_load_stackoverflow) 1993-10-20

Similar Documents

Publication Publication Date Title
JPS62250671A (ja) 半導体装置
JP2800702B2 (ja) 半導体装置
JPS6119164A (ja) 相補型集積回路とその製造方法
JPH01268171A (ja) 半導体装置
JP2001284540A (ja) 半導体装置およびその製造方法
JPS6235557A (ja) 半導体装置
JP2596340B2 (ja) 半導体装置
JPH05121684A (ja) 保護ダイオードを備えたｃｍｏｓ半導体装置
JPS62262462A (ja) 半導体装置
JPS61274366A (ja) 高耐圧半導体装置
JPS5937858B2 (ja) 半導体装置およびその製法
JPS61164265A (ja) Ｍｉｓ型半導体集積回路装置
JP2877175B2 (ja) 半導体入力保護装置
JPH02304949A (ja) 半導体装置
JPH0358472A (ja) Ｃｍｏｓ半導体装置
JP2684712B2 (ja) 電界効果トランジスタ
JP2970376B2 (ja) 相補型半導体装置の製造方法
KR950003238B1 (ko) 다중-전극을 이용한 논리소자의 구조
JP2021082747A (ja) 半導体装置及び集積回路
JPH02267970A (ja) 半導体装置
JPH0712060B2 (ja) 相補型ｍｏｓデバイスの入力保護装置
JPS61256757A (ja) Ｍｏｓ型集積回路
JP2676769B2 (ja) 半導体装置
JPH0215672A (ja) 半導体装置
JPS59228764A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term