JPS62247525A - アライメント方法 - Google Patents

アライメント方法

Info

Publication number
JPS62247525A
JPS62247525A JP61090918A JP9091886A JPS62247525A JP S62247525 A JPS62247525 A JP S62247525A JP 61090918 A JP61090918 A JP 61090918A JP 9091886 A JP9091886 A JP 9091886A JP S62247525 A JPS62247525 A JP S62247525A
Authority
JP
Japan
Prior art keywords
pattern
mask
wafer
area
overlap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61090918A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523490B2 (enrdf_load_stackoverflow
Inventor
Hiromi Honda
裕己 本田
Yoshio Kono
河野　芳雄
Kiyoteru Kobayashi
清輝 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61090918A priority Critical patent/JPS62247525A/ja
Publication of JPS62247525A publication Critical patent/JPS62247525A/ja
Publication of JPH0523490B2 publication Critical patent/JPH0523490B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP61090918A 1986-04-18 1986-04-18 アライメント方法 Granted JPS62247525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61090918A JPS62247525A (ja) 1986-04-18 1986-04-18 アライメント方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61090918A JPS62247525A (ja) 1986-04-18 1986-04-18 アライメント方法

Publications (2)

Publication Number Publication Date
JPS62247525A true JPS62247525A (ja) 1987-10-28
JPH0523490B2 JPH0523490B2 (enrdf_load_stackoverflow) 1993-04-02

Family

ID=14011803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61090918A Granted JPS62247525A (ja) 1986-04-18 1986-04-18 アライメント方法

Country Status (1)

Country Link
JP (1) JPS62247525A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6094256A (en) * 1998-09-29 2000-07-25 Nikon Precision Inc. Method for forming a critical dimension test structure and its use
US6956659B2 (en) 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
US6974653B2 (en) 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169239A (en) * 1981-04-09 1982-10-18 Nec Corp Semiconductor device
JPS60145618A (ja) * 1984-01-10 1985-08-01 Nec Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169239A (en) * 1981-04-09 1982-10-18 Nec Corp Semiconductor device
JPS60145618A (ja) * 1984-01-10 1985-08-01 Nec Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6094256A (en) * 1998-09-29 2000-07-25 Nikon Precision Inc. Method for forming a critical dimension test structure and its use
US6750952B2 (en) 1998-09-29 2004-06-15 Nikon Precision, Inc. Apparatus for preforming measurement of a dimension of a test mark for semiconductor processing
US6956659B2 (en) 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
US6974653B2 (en) 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks

Also Published As

Publication number Publication date
JPH0523490B2 (enrdf_load_stackoverflow) 1993-04-02

Similar Documents

Publication Publication Date Title
KR100194255B1 (ko) 레티클 패턴 위치 맞춤 방법
JPS5856402B2 (ja) 位置決め用センサ−
JPS62247525A (ja) アライメント方法
JPS60163110A (ja) 位置合わせ装置
JP3580992B2 (ja) フォトマスク
JPH01215022A (ja) 半導体装置の製造方法
JPH0387013A (ja) 半導体装置の製造方法
JPH09127680A (ja) 露光用マスク
JPH07111952B2 (ja) ホトリソグラフィー工程におけるガラスマスク
JP2000294487A (ja) 半導体装置製造用重ね合わせ測定マークの配置構造
JPH01282816A (ja) 半導体製造装置
JPS6216524A (ja) アライメント方法
KR20030002231A (ko) 비대칭의 중첩표시를 이용한 레티클
JPS5963728A (ja) 半導体装置の製造方法
JPH03134504A (ja) 位置合わせ方法
JPH0499309A (ja) バーニアパターン
JPH03137646A (ja) 縮小投影露光装置用レチクル
JPH04148529A (ja) 半導体ウエハとフォトマスクとの位置合せ方法
JPS60145618A (ja) 半導体装置の製造方法
JPS63104326A (ja) 半導体装置の製造方法
KR0116281Y1 (ko) 반도체 체조장치의 개량 마스크
JPH0495956A (ja) リソグラフィマスク及びマスクパターン転写方法
CN116243554A (zh) 光刻版及套刻对准方法
JP2001033942A (ja) フォトマスク、露光装置、および半導体ウェーハ
JPH0226636Y2 (enrdf_load_stackoverflow)