JPS62235784A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS62235784A
JPS62235784A JP61080479A JP8047986A JPS62235784A JP S62235784 A JPS62235784 A JP S62235784A JP 61080479 A JP61080479 A JP 61080479A JP 8047986 A JP8047986 A JP 8047986A JP S62235784 A JPS62235784 A JP S62235784A
Authority
JP
Japan
Prior art keywords
insulating layer
film
thin film
film transistor
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61080479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587029B2 (enrdf_load_stackoverflow
Inventor
Yutaka Takato
裕 高藤
Masahiro Adachi
昌浩 足立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61080479A priority Critical patent/JPS62235784A/ja
Publication of JPS62235784A publication Critical patent/JPS62235784A/ja
Publication of JPH0587029B2 publication Critical patent/JPH0587029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
JP61080479A 1986-04-07 1986-04-07 薄膜トランジスタの製造方法 Granted JPS62235784A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61080479A JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61080479A JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6219493A Division JP2702865B2 (ja) 1993-03-22 1993-03-22 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS62235784A true JPS62235784A (ja) 1987-10-15
JPH0587029B2 JPH0587029B2 (enrdf_load_stackoverflow) 1993-12-15

Family

ID=13719408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61080479A Granted JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62235784A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021947A (ja) * 1988-06-09 1990-01-08 Sharp Corp 薄膜トランジスタの製造方法
US5021850A (en) * 1988-07-13 1991-06-04 Seikosha Co., Ltd. Silicon thin film transistor
JPH03148136A (ja) * 1989-11-02 1991-06-24 Matsushita Electric Ind Co Ltd 半導体素子および半導体素子の製造方法
US9553109B2 (en) 2014-11-12 2017-01-24 Mitsubishi Electric Corporation Thin film transistor substrate, method for manufacturing the same, and liquid crystal display
US9716118B2 (en) 2014-12-24 2017-07-25 Mitsubishi Electric Corporation Thin film transistor substrate including thin film transistor formed of oxide semiconductor and method for manufacturing the same
US9929186B2 (en) 2016-03-22 2018-03-27 Mitsubishi Electric Corporation Thin film transistor substrate and method for manufacturing the same
US10109656B2 (en) 2016-11-17 2018-10-23 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, liquid crystal display device, and method of manufacturing thin film transistor
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021947A (ja) * 1988-06-09 1990-01-08 Sharp Corp 薄膜トランジスタの製造方法
US5021850A (en) * 1988-07-13 1991-06-04 Seikosha Co., Ltd. Silicon thin film transistor
US5071779A (en) * 1988-07-13 1991-12-10 Seikosha Co., Ltd. Method for producing a silicon thin film transistor
JPH03148136A (ja) * 1989-11-02 1991-06-24 Matsushita Electric Ind Co Ltd 半導体素子および半導体素子の製造方法
US9553109B2 (en) 2014-11-12 2017-01-24 Mitsubishi Electric Corporation Thin film transistor substrate, method for manufacturing the same, and liquid crystal display
US9941409B2 (en) 2014-11-12 2018-04-10 Mitsubishi Electric Corporation Method for manufacturing a thin film transistor substrate
US9716118B2 (en) 2014-12-24 2017-07-25 Mitsubishi Electric Corporation Thin film transistor substrate including thin film transistor formed of oxide semiconductor and method for manufacturing the same
US9911765B2 (en) 2014-12-24 2018-03-06 Mitsubishi Electric Corporation Thin film transistor substrate including thin film transistor formed of oxide semiconductor and method for manufacturing the same
US9929186B2 (en) 2016-03-22 2018-03-27 Mitsubishi Electric Corporation Thin film transistor substrate and method for manufacturing the same
US10109656B2 (en) 2016-11-17 2018-10-23 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, liquid crystal display device, and method of manufacturing thin film transistor
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device

Also Published As

Publication number Publication date
JPH0587029B2 (enrdf_load_stackoverflow) 1993-12-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term