JPS62230967A - 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法 - Google Patents

光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法

Info

Publication number
JPS62230967A
JPS62230967A JP7405186A JP7405186A JPS62230967A JP S62230967 A JPS62230967 A JP S62230967A JP 7405186 A JP7405186 A JP 7405186A JP 7405186 A JP7405186 A JP 7405186A JP S62230967 A JPS62230967 A JP S62230967A
Authority
JP
Japan
Prior art keywords
target
powder
container
sputtering
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7405186A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0354189B2 (fr
Inventor
Kenichi Hijikata
土方 研一
Kazuyuki Sato
一幸 佐藤
Riyouko Furuhashi
古橋 亮子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP7405186A priority Critical patent/JPS62230967A/ja
Publication of JPS62230967A publication Critical patent/JPS62230967A/ja
Publication of JPH0354189B2 publication Critical patent/JPH0354189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
JP7405186A 1986-03-31 1986-03-31 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法 Granted JPS62230967A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7405186A JPS62230967A (ja) 1986-03-31 1986-03-31 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7405186A JPS62230967A (ja) 1986-03-31 1986-03-31 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法

Publications (2)

Publication Number Publication Date
JPS62230967A true JPS62230967A (ja) 1987-10-09
JPH0354189B2 JPH0354189B2 (fr) 1991-08-19

Family

ID=13535999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7405186A Granted JPS62230967A (ja) 1986-03-31 1986-03-31 光磁気記録薄膜の形成に用いられた強磁性材製使用済みターゲットの再生方法

Country Status (1)

Country Link
JP (1) JPS62230967A (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003025244A2 (fr) * 2001-09-17 2003-03-27 Heraeus, Inc. Remise a neuf des cibles de pulverisation
EP2087144A1 (fr) * 2007-07-17 2009-08-12 Williams Advanced Materials Inc. Procédé de remise en état d'une cible de pulvérisation cathodique
CN102747329A (zh) * 2011-04-20 2012-10-24 光洋应用材料科技股份有限公司 再生溅镀靶材及其制作方法
JP2013001971A (ja) * 2011-06-17 2013-01-07 Solar Applied Materials Technology Corp 再製スパッタリングターゲット及びその製造方法
US8460602B2 (en) 2008-12-26 2013-06-11 Tanaka Holdings Co., Ltd Method for producing regenerated target
US8961867B2 (en) 2008-09-09 2015-02-24 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
JP2015120974A (ja) * 2013-11-25 2015-07-02 株式会社フルヤ金属 スパッタリングターゲットの再生方法及び再生スパッタリングターゲット
US9095932B2 (en) 2006-12-13 2015-08-04 H.C. Starck Inc. Methods of joining metallic protective layers
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US9783882B2 (en) 2007-05-04 2017-10-10 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom
CN114477992A (zh) * 2022-01-18 2022-05-13 宁波江丰热等静压技术有限公司 一种溅射后氧化铟锡靶材的再生方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043404A (ja) * 1983-08-16 1985-03-08 Mitsubishi Metal Corp 超硬合金製リング状部材の再生方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043404A (ja) * 1983-08-16 1985-03-08 Mitsubishi Metal Corp 超硬合金製リング状部材の再生方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003025244A2 (fr) * 2001-09-17 2003-03-27 Heraeus, Inc. Remise a neuf des cibles de pulverisation
WO2003025244A3 (fr) * 2001-09-17 2004-10-14 Heraeus Inc Remise a neuf des cibles de pulverisation
KR100617402B1 (ko) * 2001-09-17 2006-09-01 헤래우스 인코포레이티드 사용된 스퍼터링 타깃을 보수하는 방법 및 보수된 스퍼터타깃
US7175802B2 (en) 2001-09-17 2007-02-13 Heraeus, Inc. Refurbishing spent sputtering targets
US9095932B2 (en) 2006-12-13 2015-08-04 H.C. Starck Inc. Methods of joining metallic protective layers
US9783882B2 (en) 2007-05-04 2017-10-10 H.C. Starck Inc. Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom
EP2087144A1 (fr) * 2007-07-17 2009-08-12 Williams Advanced Materials Inc. Procédé de remise en état d'une cible de pulvérisation cathodique
JP2010514921A (ja) * 2007-07-17 2010-05-06 ウィリアムズ アドバンスト マテリアルズ インコーポレイティド スパッタリングターゲット修復用の方法
EP2087144A4 (fr) * 2007-07-17 2011-04-13 Williams Advanced Materials Inc Procédé de remise en état d'une cible de pulvérisation cathodique
US8961867B2 (en) 2008-09-09 2015-02-24 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8460602B2 (en) 2008-12-26 2013-06-11 Tanaka Holdings Co., Ltd Method for producing regenerated target
US8999227B2 (en) 2008-12-26 2015-04-07 Tanaka Holdings Co., Ltd Method for producing regenerated target
CN102747329A (zh) * 2011-04-20 2012-10-24 光洋应用材料科技股份有限公司 再生溅镀靶材及其制作方法
JP2013001971A (ja) * 2011-06-17 2013-01-07 Solar Applied Materials Technology Corp 再製スパッタリングターゲット及びその製造方法
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US9120183B2 (en) 2011-09-29 2015-09-01 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets
US9293306B2 (en) 2011-09-29 2016-03-22 H.C. Starck, Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
US9412568B2 (en) 2011-09-29 2016-08-09 H.C. Starck, Inc. Large-area sputtering targets
JP2015120974A (ja) * 2013-11-25 2015-07-02 株式会社フルヤ金属 スパッタリングターゲットの再生方法及び再生スパッタリングターゲット
CN114477992A (zh) * 2022-01-18 2022-05-13 宁波江丰热等静压技术有限公司 一种溅射后氧化铟锡靶材的再生方法

Also Published As

Publication number Publication date
JPH0354189B2 (fr) 1991-08-19

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