JPS6222454B2 - - Google Patents
Info
- Publication number
- JPS6222454B2 JPS6222454B2 JP54103998A JP10399879A JPS6222454B2 JP S6222454 B2 JPS6222454 B2 JP S6222454B2 JP 54103998 A JP54103998 A JP 54103998A JP 10399879 A JP10399879 A JP 10399879A JP S6222454 B2 JPS6222454 B2 JP S6222454B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- insulating film
- junction
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10399879A JPS5627945A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device with multilayered wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10399879A JPS5627945A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device with multilayered wiring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5627945A JPS5627945A (en) | 1981-03-18 |
| JPS6222454B2 true JPS6222454B2 (enrdf_load_stackoverflow) | 1987-05-18 |
Family
ID=14368954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10399879A Granted JPS5627945A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device with multilayered wiring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5627945A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63253649A (ja) * | 1987-04-10 | 1988-10-20 | Nec Corp | 半導体装置 |
-
1979
- 1979-08-17 JP JP10399879A patent/JPS5627945A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5627945A (en) | 1981-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02275675A (ja) | Ｍｏｓ型半導体装置 | |
| JPH05347412A (ja) | 半導体集積回路 | |
| JPS6222454B2 (enrdf_load_stackoverflow) | ||
| US5949114A (en) | Semiconductor device having increased breakdown voltage and method of fabricating same | |
| JP2825038B2 (ja) | 半導体装置 | |
| JP3217484B2 (ja) | 高耐圧半導体装置 | |
| JP2642000B2 (ja) | Ｍｏｓ集積回路装置 | |
| JPH04171938A (ja) | 半導体集積回路装置 | |
| JPS6153756A (ja) | 半導体装置 | |
| JPS60103661A (ja) | 半導体集積回路装置 | |
| JPH10223846A (ja) | 入出力保護回路 | |
| JPS607497Y2 (ja) | Ｍｏｓトランジスタの保護デバイス | |
| JP2001223277A (ja) | 入出力保護回路 | |
| JPS59151460A (ja) | 半導体装置 | |
| JPH05211253A (ja) | 樹脂封止半導体装置 | |
| JPH04304658A (ja) | 高耐圧半導体装置及びその製造方法 | |
| JPH04239178A (ja) | 集積回路 | |
| JP2000243956A (ja) | 半導体装置 | |
| JPS6018931A (ja) | 半導体装置とその使用方法 | |
| JPH07130838A (ja) | 半導体装置 | |
| JPH0716006B2 (ja) | 半導体装置 | |
| JPH0527996B2 (enrdf_load_stackoverflow) | ||
| JPS6230364A (ja) | Ｍｉｓ半導体装置の製法 | |
| JPS6352466A (ja) | 半導体集積回路装置 | |
| JPH04359473A (ja) | 絶縁ゲート型電界効果トランジスタ |