JPS62216356A - 半導体集積回路の製造方法 - Google Patents

半導体集積回路の製造方法

Info

Publication number
JPS62216356A
JPS62216356A JP61060015A JP6001586A JPS62216356A JP S62216356 A JPS62216356 A JP S62216356A JP 61060015 A JP61060015 A JP 61060015A JP 6001586 A JP6001586 A JP 6001586A JP S62216356 A JPS62216356 A JP S62216356A
Authority
JP
Japan
Prior art keywords
layer
region
diffusion layer
conductivity type
vertical pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61060015A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0577294B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Teruo Tabata
田端　輝夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP61060015A priority Critical patent/JPS62216356A/ja
Publication of JPS62216356A publication Critical patent/JPS62216356A/ja
Publication of JPH0577294B2 publication Critical patent/JPH0577294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP61060015A 1986-03-18 1986-03-18 半導体集積回路の製造方法 Granted JPS62216356A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61060015A JPS62216356A (ja) 1986-03-18 1986-03-18 半導体集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61060015A JPS62216356A (ja) 1986-03-18 1986-03-18 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS62216356A true JPS62216356A (ja) 1987-09-22
JPH0577294B2 JPH0577294B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-10-26

Family

ID=13129814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61060015A Granted JPS62216356A (ja) 1986-03-18 1986-03-18 半導体集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS62216356A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors
US5108739A (en) * 1986-08-25 1992-04-28 Titan Kogyo Kabushiki Kaisha White colored deodorizer and process for producing the same
US6469366B1 (en) 2000-04-27 2002-10-22 Mitsubishi Denki Kabushiki Kaisha Bipolar transistor with collector diffusion layer formed deep in the substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350686A (en) * 1976-10-19 1978-05-09 Mitsubishi Electric Corp Production of semiconductor integrated circuit
JPS5384578A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350686A (en) * 1976-10-19 1978-05-09 Mitsubishi Electric Corp Production of semiconductor integrated circuit
JPS5384578A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108739A (en) * 1986-08-25 1992-04-28 Titan Kogyo Kabushiki Kaisha White colored deodorizer and process for producing the same
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors
US6469366B1 (en) 2000-04-27 2002-10-22 Mitsubishi Denki Kabushiki Kaisha Bipolar transistor with collector diffusion layer formed deep in the substrate

Also Published As

Publication number Publication date
JPH0577294B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-10-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term