JPS6221266B2 - - Google Patents

Info

Publication number
JPS6221266B2
JPS6221266B2 JP55188204A JP18820480A JPS6221266B2 JP S6221266 B2 JPS6221266 B2 JP S6221266B2 JP 55188204 A JP55188204 A JP 55188204A JP 18820480 A JP18820480 A JP 18820480A JP S6221266 B2 JPS6221266 B2 JP S6221266B2
Authority
JP
Japan
Prior art keywords
film
opening
psg
silicon nitride
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55188204A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57113235A (en
Inventor
Toshio Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55188204A priority Critical patent/JPS57113235A/ja
Priority to US06/333,508 priority patent/US4472730A/en
Priority to GB8139049A priority patent/GB2092376B/en
Publication of JPS57113235A publication Critical patent/JPS57113235A/ja
Publication of JPS6221266B2 publication Critical patent/JPS6221266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/069—
    • H10W74/137—
    • H10W70/60—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/932—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP55188204A 1980-12-29 1980-12-29 Semiconductor device Granted JPS57113235A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55188204A JPS57113235A (en) 1980-12-29 1980-12-29 Semiconductor device
US06/333,508 US4472730A (en) 1980-12-29 1981-12-22 Semiconductor device having an improved moisture resistance
GB8139049A GB2092376B (en) 1980-12-29 1981-12-30 Improvements in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188204A JPS57113235A (en) 1980-12-29 1980-12-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57113235A JPS57113235A (en) 1982-07-14
JPS6221266B2 true JPS6221266B2 (enExample) 1987-05-12

Family

ID=16219589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55188204A Granted JPS57113235A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (3)

Country Link
US (1) US4472730A (enExample)
JP (1) JPS57113235A (enExample)
GB (1) GB2092376B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0105915A1 (en) * 1982-04-23 1984-04-25 Western Electric Company, Incorporated Semiconductor integrated circuit structures having insulated conductors
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
US4622576A (en) * 1984-10-22 1986-11-11 National Semiconductor Corporation Conductive non-metallic self-passivating non-corrodable IC bonding pads
US4824801A (en) * 1986-09-09 1989-04-25 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing aluminum bonding pad with PSG coating
FR2604029B1 (fr) * 1986-09-16 1994-08-05 Toshiba Kk Puce de circuit integre possedant des bornes de sortie ameliorees
US4922323A (en) * 1987-04-09 1990-05-01 Microelectronics And Computer Technology Corporation Hermetically sealed multilayer electrical feedthru
JPH0695517B2 (ja) * 1987-06-25 1994-11-24 日本電気株式会社 半導体装置
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
US5366921A (en) * 1987-11-13 1994-11-22 Canon Kabushiki Kaisha Process for fabricating an electronic circuit apparatus
JPH0734449B2 (ja) * 1987-11-30 1995-04-12 三菱電機株式会社 半導体装置の電極接合部構造
US4998805A (en) * 1988-02-19 1991-03-12 Eastman Kodak Company Elimination of field-induced instabilities in electrooptic modulators
US5044220A (en) * 1988-03-10 1991-09-03 Dr. Ing. H.C.F. Porsche Ag Shifting arrangement for an automatic transmission of a motor vehicle
US4903118A (en) * 1988-03-30 1990-02-20 Director General, Agency Of Industrial Science And Technology Semiconductor device including a resilient bonding resin
US5121187A (en) * 1988-10-17 1992-06-09 Semiconductor Energy Laboratory Co., Ltd. Electric device having a leadframe covered with an antioxidation film
JPH0682704B2 (ja) * 1989-06-27 1994-10-19 株式会社東芝 半導体装置
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
FR2691836B1 (fr) * 1992-05-27 1997-04-30 Ela Medical Sa Procede de fabrication d'un dispositif a semi-conducteurs comportant au moins une puce et dispositif correspondant.
JP3057130B2 (ja) * 1993-02-18 2000-06-26 三菱電機株式会社 樹脂封止型半導体パッケージおよびその製造方法
JP2940432B2 (ja) * 1995-04-27 1999-08-25 ヤマハ株式会社 半導体装置とその製造方法
US5960306A (en) * 1995-12-15 1999-09-28 Motorola, Inc. Process for forming a semiconductor device
US6396145B1 (en) * 1998-06-12 2002-05-28 Hitachi, Ltd. Semiconductor device and method for manufacturing the same technical field
US6710446B2 (en) * 1999-12-30 2004-03-23 Renesas Technology Corporation Semiconductor device comprising stress relaxation layers and method for manufacturing the same
JP4003780B2 (ja) * 2004-09-17 2007-11-07 カシオ計算機株式会社 半導体装置及びその製造方法
CN100452367C (zh) * 2004-09-17 2009-01-14 卡西欧计算机株式会社 具有密封膜的芯片尺寸的半导体装置及其制造方法
JP4865913B2 (ja) * 2009-02-04 2012-02-01 パナソニック株式会社 半導体基板構造及び半導体装置
US9305788B2 (en) * 2012-10-29 2016-04-05 Sumitomo Electric Device Innovations, Inc. Method of fabricating semiconductor device
US9362191B2 (en) * 2013-08-29 2016-06-07 Infineon Technologies Austria Ag Encapsulated semiconductor device
CN110190118A (zh) * 2018-02-22 2019-08-30 三垦电气株式会社 半导体装置和电子设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005455A (en) * 1974-08-21 1977-01-25 Intel Corporation Corrosive resistant semiconductor interconnect pad
JPS5221782A (en) * 1975-08-13 1977-02-18 Toshiba Corp Producing system and unit of semiconductor
JPS5232270A (en) * 1975-09-05 1977-03-11 Hitachi Ltd Passivation film formaion by sputtering
JPS5295171A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Electrode for semi-conductor
JPS5414672A (en) * 1977-07-06 1979-02-03 Hitachi Ltd Bonding electrode structure of semiconductor device
JPS54147789A (en) * 1978-05-11 1979-11-19 Matsushita Electric Ind Co Ltd Semiconductor divice and its manufacture
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
JPS558090A (en) * 1978-07-03 1980-01-21 Nec Corp Semiconductor device
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
JPS5527644A (en) * 1978-08-17 1980-02-27 Nec Corp Multi-layer wiring type semiconductor device

Also Published As

Publication number Publication date
JPS57113235A (en) 1982-07-14
GB2092376A (en) 1982-08-11
GB2092376B (en) 1985-03-06
US4472730A (en) 1984-09-18

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