JPS62183095A - 半導体メモリ装置 - Google Patents
半導体メモリ装置Info
- Publication number
- JPS62183095A JPS62183095A JP61309792A JP30979286A JPS62183095A JP S62183095 A JPS62183095 A JP S62183095A JP 61309792 A JP61309792 A JP 61309792A JP 30979286 A JP30979286 A JP 30979286A JP S62183095 A JPS62183095 A JP S62183095A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- word line
- memory device
- semiconductor memory
- cell group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 45
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 210000004460 N cell Anatomy 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61309792A JPS62183095A (ja) | 1986-12-24 | 1986-12-24 | 半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61309792A JPS62183095A (ja) | 1986-12-24 | 1986-12-24 | 半導体メモリ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57096602A Division JPS58212696A (ja) | 1982-06-03 | 1982-06-03 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62183095A true JPS62183095A (ja) | 1987-08-11 |
| JPH0421959B2 JPH0421959B2 (enrdf_load_stackoverflow) | 1992-04-14 |
Family
ID=17997295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61309792A Granted JPS62183095A (ja) | 1986-12-24 | 1986-12-24 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62183095A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01181460A (ja) * | 1988-01-08 | 1989-07-19 | Nec Corp | 半導体メモリ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54139490A (en) * | 1978-04-21 | 1979-10-29 | Hitachi Ltd | Semiconductor memory unit |
| JPS5694576A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Word decoder circuit |
| JPS5766587A (en) * | 1980-10-09 | 1982-04-22 | Fujitsu Ltd | Static semiconductor storage device |
-
1986
- 1986-12-24 JP JP61309792A patent/JPS62183095A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54139490A (en) * | 1978-04-21 | 1979-10-29 | Hitachi Ltd | Semiconductor memory unit |
| JPS5694576A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Word decoder circuit |
| JPS5766587A (en) * | 1980-10-09 | 1982-04-22 | Fujitsu Ltd | Static semiconductor storage device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01181460A (ja) * | 1988-01-08 | 1989-07-19 | Nec Corp | 半導体メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0421959B2 (enrdf_load_stackoverflow) | 1992-04-14 |
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