JPS6218028A - デイスカム装置 - Google Patents

デイスカム装置

Info

Publication number
JPS6218028A
JPS6218028A JP60156510A JP15651085A JPS6218028A JP S6218028 A JPS6218028 A JP S6218028A JP 60156510 A JP60156510 A JP 60156510A JP 15651085 A JP15651085 A JP 15651085A JP S6218028 A JPS6218028 A JP S6218028A
Authority
JP
Japan
Prior art keywords
temperature
hot plate
substrate
plate
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60156510A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149012B2 (enExample
Inventor
Yasuo Matsuoka
康男 松岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60156510A priority Critical patent/JPS6218028A/ja
Priority to US06/884,640 priority patent/US4800251A/en
Publication of JPS6218028A publication Critical patent/JPS6218028A/ja
Publication of JPH0149012B2 publication Critical patent/JPH0149012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60156510A 1985-07-16 1985-07-16 デイスカム装置 Granted JPS6218028A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60156510A JPS6218028A (ja) 1985-07-16 1985-07-16 デイスカム装置
US06/884,640 US4800251A (en) 1985-07-16 1986-07-11 Apparatus for forming a resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60156510A JPS6218028A (ja) 1985-07-16 1985-07-16 デイスカム装置

Publications (2)

Publication Number Publication Date
JPS6218028A true JPS6218028A (ja) 1987-01-27
JPH0149012B2 JPH0149012B2 (enExample) 1989-10-23

Family

ID=15629345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60156510A Granted JPS6218028A (ja) 1985-07-16 1985-07-16 デイスカム装置

Country Status (2)

Country Link
US (1) US4800251A (enExample)
JP (1) JPS6218028A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0515359U (ja) * 1991-08-05 1993-02-26 住友電装株式会社 シールド線用接続端子
US6022672A (en) * 1993-11-19 2000-02-08 Sony Corporation Method of manufacturing semiconductors having improved temperature control
JP2005150678A (ja) * 2003-11-19 2005-06-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
JPH04207026A (ja) * 1990-11-30 1992-07-29 Toshiba Corp プラズマ処理装置
US6342941B1 (en) 1996-03-11 2002-01-29 Nikon Corporation Exposure apparatus and method preheating a mask before exposing; a conveyance method preheating a mask before exposing; and a device manufacturing system and method manufacturing a device according to the exposure apparatus and method
TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
US6309976B1 (en) 1999-03-22 2001-10-30 Taiwan Semiconductor Manufacturing Company Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture
US6780571B1 (en) 2002-01-11 2004-08-24 Taiwan Semiconductor Manufacturing Company, Limited Upside down bake plate to make vertical and negative photoresist profile
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
US20070155071A1 (en) * 2005-10-07 2007-07-05 Chan Winston K Method of reducing edge height at the overlap of a layer deposited on a stepped substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
JPS6056431B2 (ja) * 1980-10-09 1985-12-10 三菱電機株式会社 プラズマエツチング装置
US4507539A (en) * 1982-01-06 1985-03-26 Sando Iron Works Co., Ltd. Method for continuous treatment of a cloth with the use of low-temperature plasma and an apparatus therefor
US4568734A (en) * 1983-02-15 1986-02-04 Eastman Kodak Company Electron-beam and X-ray sensitive polymers and resists
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4557797A (en) * 1984-06-01 1985-12-10 Texas Instruments Incorporated Resist process using anti-reflective coating
US4657618A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0515359U (ja) * 1991-08-05 1993-02-26 住友電装株式会社 シールド線用接続端子
US6022672A (en) * 1993-11-19 2000-02-08 Sony Corporation Method of manufacturing semiconductors having improved temperature control
JP2005150678A (ja) * 2003-11-19 2005-06-09 Hynix Semiconductor Inc フラッシュメモリ素子の製造方法

Also Published As

Publication number Publication date
JPH0149012B2 (enExample) 1989-10-23
US4800251A (en) 1989-01-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees