JPH0551670B2 - - Google Patents
Info
- Publication number
- JPH0551670B2 JPH0551670B2 JP18544982A JP18544982A JPH0551670B2 JP H0551670 B2 JPH0551670 B2 JP H0551670B2 JP 18544982 A JP18544982 A JP 18544982A JP 18544982 A JP18544982 A JP 18544982A JP H0551670 B2 JPH0551670 B2 JP H0551670B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- etched
- temperature
- etching
- mosi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229910016006 MoSi Inorganic materials 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18544982A JPS5976876A (ja) | 1982-10-22 | 1982-10-22 | 反応性イオンエツチング方法およびその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18544982A JPS5976876A (ja) | 1982-10-22 | 1982-10-22 | 反応性イオンエツチング方法およびその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5976876A JPS5976876A (ja) | 1984-05-02 |
| JPH0551670B2 true JPH0551670B2 (enExample) | 1993-08-03 |
Family
ID=16170986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18544982A Granted JPS5976876A (ja) | 1982-10-22 | 1982-10-22 | 反応性イオンエツチング方法およびその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5976876A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT387989B (de) * | 1987-09-01 | 1989-04-10 | Miba Gleitlager Ag | Vorrichtung zur behandlung von als kathode geschalteten innenflaechen von gegenstaenden durch ionenbeschuss aus einer gasentladung |
| US5427670A (en) * | 1992-12-10 | 1995-06-27 | U.S. Philips Corporation | Device for the treatment of substrates at low temperature |
| US6231776B1 (en) * | 1995-12-04 | 2001-05-15 | Daniel L. Flamm | Multi-temperature processing |
| JP4832594B1 (ja) * | 2010-12-27 | 2011-12-07 | 卓也 佐々木 | 管式熱交換器 |
-
1982
- 1982-10-22 JP JP18544982A patent/JPS5976876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5976876A (ja) | 1984-05-02 |
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