JPS6217870B2 - - Google Patents

Info

Publication number
JPS6217870B2
JPS6217870B2 JP55095188A JP9518880A JPS6217870B2 JP S6217870 B2 JPS6217870 B2 JP S6217870B2 JP 55095188 A JP55095188 A JP 55095188A JP 9518880 A JP9518880 A JP 9518880A JP S6217870 B2 JPS6217870 B2 JP S6217870B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon film
film
semiconductor device
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55095188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5720451A (en
Inventor
Akira Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9518880A priority Critical patent/JPS5720451A/ja
Publication of JPS5720451A publication Critical patent/JPS5720451A/ja
Publication of JPS6217870B2 publication Critical patent/JPS6217870B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP9518880A 1980-07-11 1980-07-11 Semiconductor device Granted JPS5720451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9518880A JPS5720451A (en) 1980-07-11 1980-07-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9518880A JPS5720451A (en) 1980-07-11 1980-07-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5720451A JPS5720451A (en) 1982-02-02
JPS6217870B2 true JPS6217870B2 (cs) 1987-04-20

Family

ID=14130772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9518880A Granted JPS5720451A (en) 1980-07-11 1980-07-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5720451A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02118753U (cs) * 1989-03-09 1990-09-25
JPH0416183U (cs) * 1990-05-31 1992-02-10

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889684A (cs) * 1972-02-24 1973-11-22
JPS515959A (en) * 1974-07-03 1976-01-19 Suwa Seikosha Kk Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02118753U (cs) * 1989-03-09 1990-09-25
JPH0416183U (cs) * 1990-05-31 1992-02-10

Also Published As

Publication number Publication date
JPS5720451A (en) 1982-02-02

Similar Documents

Publication Publication Date Title
JPS6217870B2 (cs)
JPS59132141A (ja) 半導体装置の製造方法
KR960000699B1 (ko) 반도체 기판 및 그 제조 방법
JPS6254427A (ja) 半導体装置の製造方法
JPS584458B2 (ja) ハンドウタイソウチ ノ セイゾウホウホウ
JPH0332214B2 (cs)
JPH079933B2 (ja) 半導体装置の製造方法
JPS60785B2 (ja) Ｍｏｓ型半導体装置の製造方法
JPS5966150A (ja) 半導体装置およびその製造方法
JPS5912013B2 (ja) ハンドウタイシユウセキカイロ
JPH036058A (ja) 半導体装置
JPH02143452A (ja) 半導体装置
JPS58169929A (ja) 半導体装置の製造方法
JPH07106416A (ja) 半導体素子の配線構造
JPH0732205B2 (ja) 不揮発性半導体記憶装置の製造方法
JPS58210168A (ja) 二層膜のエツチング方法
JPS6171664A (ja) 半導体装置の製造方法
JPH01144671A (ja) 半導体メモリ装置の製造方法
JPS61253832A (ja) 半導体装置
JPS6050060B2 (ja) 半導体装置の製造方法
JPS59105348A (ja) 半導体装置及びその製造方法
JPS63293916A (ja) 半導体装置の製造法
JPH0334856B2 (cs)
JPH0590195A (ja) 半導体装置の製造方法
JPS62279660A (ja) 配線層の形成方法