JPS62174972A - 両面ゲ−ト型静電誘導サイリスタ - Google Patents

両面ゲ−ト型静電誘導サイリスタ

Info

Publication number
JPS62174972A
JPS62174972A JP61150123A JP15012386A JPS62174972A JP S62174972 A JPS62174972 A JP S62174972A JP 61150123 A JP61150123 A JP 61150123A JP 15012386 A JP15012386 A JP 15012386A JP S62174972 A JPS62174972 A JP S62174972A
Authority
JP
Japan
Prior art keywords
gate
region
voltage
electrode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61150123A
Other languages
English (en)
Japanese (ja)
Other versions
JPS633466B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Tadahiro Omi
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP61150123A priority Critical patent/JPS62174972A/ja
Publication of JPS62174972A publication Critical patent/JPS62174972A/ja
Publication of JPS633466B2 publication Critical patent/JPS633466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP61150123A 1986-06-26 1986-06-26 両面ゲ−ト型静電誘導サイリスタ Granted JPS62174972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61150123A JPS62174972A (ja) 1986-06-26 1986-06-26 両面ゲ−ト型静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61150123A JPS62174972A (ja) 1986-06-26 1986-06-26 両面ゲ−ト型静電誘導サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP74078A Division JPS5493982A (en) 1978-01-06 1978-01-06 Electrostatic induction semiconductor

Publications (2)

Publication Number Publication Date
JPS62174972A true JPS62174972A (ja) 1987-07-31
JPS633466B2 JPS633466B2 (enrdf_load_stackoverflow) 1988-01-23

Family

ID=15489983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61150123A Granted JPS62174972A (ja) 1986-06-26 1986-06-26 両面ゲ−ト型静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS62174972A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS633466B2 (enrdf_load_stackoverflow) 1988-01-23

Similar Documents

Publication Publication Date Title
US5014102A (en) MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US5357125A (en) Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
US5091766A (en) Thyristor with first and second independent control electrodes
WO1991020096A1 (en) Gated base controlled thyristor
JPH01218067A (ja) バイポーラ型半導体スイッチング装置
JP3119931B2 (ja) サイリスタ
US5194394A (en) Thyristor and method of manufacturing the same
JPH0624244B2 (ja) 複合半導体装置
JPH0793422B2 (ja) 半導体装置
JPH0620141B2 (ja) 導電変調型ｍｏｓｆｅｔ
US5497011A (en) Semiconductor memory device and a method of using the same
US4558243A (en) Bidirectional power FET with shorting-channel off state
JPS62174972A (ja) 両面ゲ−ト型静電誘導サイリスタ
US5925899A (en) Vertical type insulated gate bipolar transistor having a planar gate structure
JPH0213937B2 (enrdf_load_stackoverflow)
JPH01238062A (ja) アノードショート型導電変調ｍｏｓｆｅｔ
KR0135589B1 (ko) 반도체장치
JP3200328B2 (ja) 複合半導体装置
JP3073056B2 (ja) 静電誘導半導体装置
JPS6212674B2 (enrdf_load_stackoverflow)
JP2829026B2 (ja) 自己消弧型半導体素子
JPS5927572A (ja) ゲ−トタ−ンオフサイリスタ
JPH01295460A (ja) 半導体装置
JP3112376B2 (ja) 縦型半導体装置
JPH036862A (ja) ゲートターンオフサイリスタ