JPS6217496Y2 - - Google Patents
Info
- Publication number
- JPS6217496Y2 JPS6217496Y2 JP1982199639U JP19963982U JPS6217496Y2 JP S6217496 Y2 JPS6217496 Y2 JP S6217496Y2 JP 1982199639 U JP1982199639 U JP 1982199639U JP 19963982 U JP19963982 U JP 19963982U JP S6217496 Y2 JPS6217496 Y2 JP S6217496Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- carbon
- slits
- view
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 36
- 229910052799 carbon Inorganic materials 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Landscapes
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19963982U JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19963982U JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59103767U JPS59103767U (ja) | 1984-07-12 |
| JPS6217496Y2 true JPS6217496Y2 (zh) | 1987-05-06 |
Family
ID=30425165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19963982U Granted JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59103767U (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
| CN105683425A (zh) * | 2013-10-30 | 2016-06-15 | 联合材料公司 | 坩埚以及使用了该坩埚的单晶蓝宝石的制造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747797A (en) * | 1980-09-05 | 1982-03-18 | Hitachi Ltd | Manufacturing apparatus for semiconductor single crystal |
-
1982
- 1982-12-28 JP JP19963982U patent/JPS59103767U/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747797A (en) * | 1980-09-05 | 1982-03-18 | Hitachi Ltd | Manufacturing apparatus for semiconductor single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59103767U (ja) | 1984-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3173765A (en) | Method of making crystalline silicon semiconductor material | |
| US4944925A (en) | Apparatus for producing single crystals | |
| JPS6217496Y2 (zh) | ||
| JPH11147785A (ja) | 単結晶の製造方法 | |
| JP2002234792A (ja) | 単結晶製造方法 | |
| JPS5950627B2 (ja) | 単結晶シリコン引上装置 | |
| JPS60122791A (ja) | 液体封止結晶引上方法 | |
| JPH0725694A (ja) | 半導体単結晶育成装置の黒鉛るつぼ | |
| JP2922038B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS58199796A (ja) | 液体封止結晶引上げ装置 | |
| Thornhill | Process and apparatus for growing a crystal ribbon | |
| JPH05139884A (ja) | 単結晶の製造方法 | |
| JPH05319973A (ja) | 単結晶製造装置 | |
| JPH0380180A (ja) | 単結晶製造装置 | |
| JPS63107887A (ja) | 単結晶引上げ用るつぼ | |
| JPH0449185Y2 (zh) | ||
| JP3392245B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0524964A (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0154318B2 (zh) | ||
| JP2766897B2 (ja) | 単結晶成長装置 | |
| JPH0380181A (ja) | 単結晶製造装置 | |
| JP2773441B2 (ja) | ＧａＡｓ単結晶の製造方法 | |
| JPH10182277A (ja) | 単結晶製造装置及びそれを用いた単結晶製造方法 | |
| JPH03153594A (ja) | 半導体単結晶製造装置 |