JPH0154318B2 - - Google Patents
Info
- Publication number
- JPH0154318B2 JPH0154318B2 JP59166843A JP16684384A JPH0154318B2 JP H0154318 B2 JPH0154318 B2 JP H0154318B2 JP 59166843 A JP59166843 A JP 59166843A JP 16684384 A JP16684384 A JP 16684384A JP H0154318 B2 JPH0154318 B2 JP H0154318B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon
- glass crucible
- quartz glass
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000000155 melt Substances 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16684384A JPS6144792A (ja) | 1984-08-09 | 1984-08-09 | シリコン単結晶引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16684384A JPS6144792A (ja) | 1984-08-09 | 1984-08-09 | シリコン単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144792A JPS6144792A (ja) | 1986-03-04 |
| JPH0154318B2 true JPH0154318B2 (zh) | 1989-11-17 |
Family
ID=15838677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16684384A Granted JPS6144792A (ja) | 1984-08-09 | 1984-08-09 | シリコン単結晶引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144792A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0699222B2 (ja) * | 1986-04-24 | 1994-12-07 | 三菱マテリアル株式会社 | 単結晶製造用ルツボ |
| JP3475407B2 (ja) | 1997-03-31 | 2003-12-08 | キヤノン株式会社 | フッ化物結晶の製造装置及び製造法並びにルツボ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5388674A (en) * | 1976-11-23 | 1978-08-04 | Busesoyutsunii Nii Monokurisut | Apparatus for growing single crystal from melts by adding broken insert |
| JPS5715075A (en) * | 1980-06-27 | 1982-01-26 | Caterpillar Mitsubishi Ltd | Hermetically sealing device of oil for hermetically sealed lubrication type truck |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5750729Y2 (zh) * | 1978-10-04 | 1982-11-06 |
-
1984
- 1984-08-09 JP JP16684384A patent/JPS6144792A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5388674A (en) * | 1976-11-23 | 1978-08-04 | Busesoyutsunii Nii Monokurisut | Apparatus for growing single crystal from melts by adding broken insert |
| JPS5715075A (en) * | 1980-06-27 | 1982-01-26 | Caterpillar Mitsubishi Ltd | Hermetically sealing device of oil for hermetically sealed lubrication type truck |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144792A (ja) | 1986-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0283903B1 (en) | Method of manufacturing quartz double crucible and method of manufacturing a silicon monocrystalline rod | |
| JP3011114B2 (ja) | シリコン溶融用坩堝 | |
| JPS59213697A (ja) | 単結晶半導体引上装置 | |
| US3025146A (en) | Method of growing shaped crystals | |
| JPH0154318B2 (zh) | ||
| JPS6168389A (ja) | 単結晶成長装置 | |
| US4116642A (en) | Method and apparatus for avoiding undesirable deposits in crystal growing operations | |
| US4238274A (en) | Method for avoiding undesirable deposits in crystal growing operations | |
| JP2560418B2 (ja) | 単結晶の育成装置 | |
| JPS6018638B2 (ja) | シリコン単結晶引上装置 | |
| JP2723249B2 (ja) | 結晶育成方法および結晶育成用るつぼ | |
| JPS6217496Y2 (zh) | ||
| JPH03199192A (ja) | シリコン単結晶引上げ用ルツボ | |
| JPH03290393A (ja) | Ｓｉ単結晶製造用ルツボ | |
| JPH01317188A (ja) | 半導体単結晶の製造方法及び装置 | |
| JPH07110798B2 (ja) | 単結晶製造装置 | |
| JPS5950627B2 (ja) | 単結晶シリコン引上装置 | |
| JPH0364478B2 (zh) | ||
| JPS6144791A (ja) | シリコン単結晶引上装置の炭素ルツボ | |
| JPH0920596A (ja) | 四ほう酸リチウム単結晶の製造装置 | |
| JPH01119594A (ja) | 結晶育成装置 | |
| JP2000247780A (ja) | 単結晶引き上げ装置 | |
| JPH021117B2 (zh) | ||
| JPS62278188A (ja) | 単結晶製造用ルツボ | |
| JP4117813B2 (ja) | 化合物半導体単結晶の製造方法 |