JPS62173700A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS62173700A
JPS62173700A JP61016050A JP1605086A JPS62173700A JP S62173700 A JPS62173700 A JP S62173700A JP 61016050 A JP61016050 A JP 61016050A JP 1605086 A JP1605086 A JP 1605086A JP S62173700 A JPS62173700 A JP S62173700A
Authority
JP
Japan
Prior art keywords
address
memory
word line
word
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61016050A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467279B2 (enrdf_load_stackoverflow
Inventor
Isao Fukushi
功 福士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61016050A priority Critical patent/JPS62173700A/ja
Priority to US07/011,268 priority patent/US4757474A/en
Priority to DE8787300721T priority patent/DE3762295D1/de
Priority to KR1019870000695A priority patent/KR910000140B1/ko
Priority to EP87300721A priority patent/EP0239196B1/en
Publication of JPS62173700A publication Critical patent/JPS62173700A/ja
Publication of JPH0467279B2 publication Critical patent/JPH0467279B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP61016050A 1986-01-28 1986-01-28 半導体記憶装置 Granted JPS62173700A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61016050A JPS62173700A (ja) 1986-01-28 1986-01-28 半導体記憶装置
US07/011,268 US4757474A (en) 1986-01-28 1987-01-21 Semiconductor memory device having redundancy circuit portion
DE8787300721T DE3762295D1 (de) 1986-01-28 1987-01-28 Halbleiterspeichereinrichtung mit redundanzschaltungsteil.
KR1019870000695A KR910000140B1 (ko) 1986-01-28 1987-01-28 용장성 회로부를 갖춘 반도체 메모리장치
EP87300721A EP0239196B1 (en) 1986-01-28 1987-01-28 Semiconductor memory device having redundancy circuit portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61016050A JPS62173700A (ja) 1986-01-28 1986-01-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS62173700A true JPS62173700A (ja) 1987-07-30
JPH0467279B2 JPH0467279B2 (enrdf_load_stackoverflow) 1992-10-27

Family

ID=11905750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61016050A Granted JPS62173700A (ja) 1986-01-28 1986-01-28 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS62173700A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970004A (en) * 1998-01-19 1999-10-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device allowing test regardless of spare cell arrangement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841500A (ja) * 1981-08-24 1983-03-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 欠陥分離用デコ−ダ
JPS59119743A (ja) * 1982-12-25 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 集積回路の冗長構成方式
JPS59135700A (ja) * 1983-01-21 1984-08-03 Hitachi Micro Comput Eng Ltd 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841500A (ja) * 1981-08-24 1983-03-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 欠陥分離用デコ−ダ
JPS59119743A (ja) * 1982-12-25 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 集積回路の冗長構成方式
JPS59135700A (ja) * 1983-01-21 1984-08-03 Hitachi Micro Comput Eng Ltd 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970004A (en) * 1998-01-19 1999-10-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device allowing test regardless of spare cell arrangement

Also Published As

Publication number Publication date
JPH0467279B2 (enrdf_load_stackoverflow) 1992-10-27

Similar Documents

Publication Publication Date Title
JP4997316B2 (ja) 半導体メモリ装置
US4866676A (en) Testing arrangement for a DRAM with redundancy
US4914632A (en) Semiconductor devices having redundancy circuitry and operating method therefor
JPS62222500A (ja) 半導体記憶装置
KR960011960B1 (ko) 반도체 기억장치
JPH01151095A (ja) 半導体メモリ
US6525987B2 (en) Dynamically configured storage array utilizing a split-decoder
JPH0589663A (ja) 半導体記憶装置およびその出力制御方法
JPS6381688A (ja) 半導体記憶装置
JPH01125799A (ja) 半導体記憶装置
JPS62173700A (ja) 半導体記憶装置
KR100703638B1 (ko) 반도체 장치
JPH01208799A (ja) 半導体記憶装置
JPH03113897A (ja) 半導体記憶装置
KR970029894A (ko) 가변 스텝 어드레스 발생기에 대한 장치 및 방법
KR100624286B1 (ko) 플래시 메모리의 리페어 장치
JPS59117799A (ja) 半導体メモリ装置
JPH02237063A (ja) 半導体メモリ
JPS58105477A (ja) Ｒａｍ制御回路
JPH0721799A (ja) 半導体記憶装置
JPH01112593A (ja) 半導体記憶装置
SU1462418A1 (ru) Запоминающее устройство
JPH06162762A (ja) 半導体記憶装置
JPH02121190A (ja) スタティック・ランダム・アクセス・メモリ
JPS602703B2 (ja) 記憶装置リ−ド／ライト処理方式

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term