JPS6216583A - メサ型モノリシック発光ダイオードアレイ - Google Patents
メサ型モノリシック発光ダイオードアレイInfo
- Publication number
- JPS6216583A JPS6216583A JP59249350A JP24935084A JPS6216583A JP S6216583 A JPS6216583 A JP S6216583A JP 59249350 A JP59249350 A JP 59249350A JP 24935084 A JP24935084 A JP 24935084A JP S6216583 A JPS6216583 A JP S6216583A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- light emitting
- emitting diode
- type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 description 22
- 239000011701 zinc Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000005360 phosphosilicate glass Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910000927 Ge alloy Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 235000001270 Allium sibiricum Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59249350A JPS6216583A (ja) | 1984-11-26 | 1984-11-26 | メサ型モノリシック発光ダイオードアレイ |
| DE3541790A DE3541790C2 (de) | 1984-11-26 | 1985-11-26 | Lichtemittierende lineare Festkörper-Diodenanordnung |
| US07/178,648 US4984035A (en) | 1984-11-26 | 1988-04-07 | Monolithic light emitting diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59249350A JPS6216583A (ja) | 1984-11-26 | 1984-11-26 | メサ型モノリシック発光ダイオードアレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6216583A true JPS6216583A (ja) | 1987-01-24 |
| JPH0363830B2 JPH0363830B2 (enrdf_load_stackoverflow) | 1991-10-02 |
Family
ID=17191715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59249350A Granted JPS6216583A (ja) | 1984-11-26 | 1984-11-26 | メサ型モノリシック発光ダイオードアレイ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6216583A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01151275A (ja) * | 1987-12-09 | 1989-06-14 | Hitachi Cable Ltd | 発光ダイオードアレイ |
| US5406095A (en) * | 1992-08-27 | 1995-04-11 | Victor Company Of Japan, Ltd. | Light emitting diode array and production method of the light emitting diode |
| US6191438B1 (en) | 1997-05-30 | 2001-02-20 | Sharp Kabushiki Kaisha | Light emitting diode array |
| US7195998B2 (en) | 2002-01-16 | 2007-03-27 | Sharp Kabushiki Kaisha | Compound semiconductor device and manufacturing method thereof |
-
1984
- 1984-11-26 JP JP59249350A patent/JPS6216583A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01151275A (ja) * | 1987-12-09 | 1989-06-14 | Hitachi Cable Ltd | 発光ダイオードアレイ |
| US5406095A (en) * | 1992-08-27 | 1995-04-11 | Victor Company Of Japan, Ltd. | Light emitting diode array and production method of the light emitting diode |
| US6191438B1 (en) | 1997-05-30 | 2001-02-20 | Sharp Kabushiki Kaisha | Light emitting diode array |
| US7195998B2 (en) | 2002-01-16 | 2007-03-27 | Sharp Kabushiki Kaisha | Compound semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363830B2 (enrdf_load_stackoverflow) | 1991-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |