JPS6216583A - Mesa type monolithic light-emitting diode array - Google Patents

Abstract

PURPOSE:To improve yield, and to reduce the dispersion of the luminous characteristics of each light-emitting diode section by forming an etching groove in the inverted mesa direction and an etching groove in the forward mesa direction orthogonal to the etching groove between the adjacent light-emitting diode sections and leading out metallic film wirings connected to electrode sections for several light-emitting diode section through the upper section of the etching groove in the forward mesa direction from the electrode sections. CONSTITUTION:An etching groove 25a in the inverted mesa direction and an etching groove 25b in the forward mesa direction are each shaped in order to isolate into each light-emitting diode section 30. Discrete minus electrode 26 is lead out through the upper sections of the etching grooves 25b in the forward mesa direction from electrode sections 29, thus resulting in no disconnec tion at stepped sections and disconnection at the angle sections of mesas. When voltage is applied among discrete minus electrode 26 and a common plus elec trode 27 and forward currents are made to flow through the light-emitting diode sections 30, electrons are injected to a P-type Ga1-xAlxAs layer 22 from an N-type Ga1-yAlyAs layer 23 and radiative recombination is generated, thus emitting beams upward from the mesa sections.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a monolithic light emitting diode display having a common electrode on the back side of a semiconductor chip and a plurality of individual electrodes on the front side.

[Conventional technology]

Conventionally, monolithic light emitting diodes have a structure in which impurities are diffused into an epitaxial growth layer grown on a single crystal substrate.

FIG. 5 is a top view of a conventional monolithic light emitting diode array, and FIG. 6 is a perspective view taken along the line AA' in FIG.

In the figure, 1 is an n-type GaAs substrate, 2 and 6 are epitaxially grown n-type GaAs 1-XPx layer and n-type GaA 5 layer, respectively. 4 and 5 are p-type regions formed by selectively diffusing Zn from the surface of the n-type Ga A 8 layer 6; This is an isolation stripe between the light emitting diode sections of the . Reference numeral 6 denotes an individual positive electrode for energization provided on the electrode portion 9 of the n-type Ga As layer 3 of each light emitting diode portion, and 7 denotes an n-type Ga As layer 3.
This is a negative electrode common to each light emitting diode section provided on the back surface of the AS substrate.

When a positive bias is applied between the positive electrode $j, 6 and the negative electrode 7, the electrons from the n-type GaAs1-) (Px layer 2 become p
The light is injected into the luminescent recombination section 4, which is the mold head region, and the light resulting from the luminescent recombination is transferred to the individual positive electrode 6 and the n-type Ga As
The light passes through a light extraction hole 8 provided in the layer 6 and is emitted to the outside as shown by an arrow C.

[Problems to be Solved by the Invention] However, since the conventional wave number type light emitting diode array has the above-described configuration, it has the following problems.

(1) Since selective diffusion of Zn is required, the process including the process of forming a diffusion mask is complicated.

(2) Selective diffusion of Zn is in-ampule diffusion, which increases manufacturing cost.

(3) Since the selective diffusion of Zn includes interstitial parts, abnormal diffusion is likely to occur particularly in crystal defect areas, which may reduce the yield.

(4) For a driving integrated circuit, it is desirable to have a common positive electrode and separate negative electrodes, but in m-v group compound semiconductors, only n-type substrates are used because there is no practical donor diffusion source. Therefore, only an array with a common negative electrode can be obtained.

(5) Since the individual electrodes of each light emitting diode part are wired with lead wires, bonding etc. are time-consuming.
Not suitable for fine structures.

[Purpose of the invention]

The purpose of the present invention is to solve the problems of the prior art described above,
A mesa-type monosilicon light-emitting diode that does not require a selective Zn diffusion process, can be manufactured in a simple process at low cost, has no significant effect on yield due to the presence of crystal defects, and has a novel structure that does not require wire bonding. - To provide door arrays.

[Failure to solve the problem]

That is, the gist of the present invention is to provide p −1 on a GaAs substrate.
A light emitting diode in which at least one mixed crystal epitaxial layer is grown so as to form one junction surface, and the light emitting diode is divided into a plurality of light emitting diode parts arranged in a line by mesa etching grooves perpendicular to the p-n junction junction. In the array, the mesa-etched grooves provided between adjacent light emitting diode parts are etched grooves in a reverse mesa direction, and the mesa-etched grooves that are perpendicular thereto and traverse the light emitting diode array are etched grooves in a forward mesa direction. The metal film wiring connected to the electrode part of the light emitting diode part is drawn out from the electrode part passing over the etching groove in the forward mesa direction.

[Supplementary explanation of the abstract]

In general, zincite-type m-v group compound semiconductor crystals have strong anisotropy in chemical etching speed and opening direction, and therefore, (100)-oriented single crystal wafers are suitable for device formation. A material with a surface orientation at or close to this is used.

For example, as shown in Figure 6, the (100) plane is
If the mesa is etched in the 011> direction and not perpendicular to this direction, the corners of each mesa will be acute angles in the <Lllll> direction, so this will become a reverse mesa, and
l> direction or a direction close to this direction is called the reverse mesa direction. On the other hand, the <Lllll> direction where the angle becomes obtuse or a direction close to this is called the forward mesa direction.

By the way, as shown in the cross-sectional views of each mesa in FIGS. 4(a) and 4(b), in the etched area in the reverse mesa direction in FIG. On the other hand, in the etched portion in the forward mesa direction in FIG. 4(b), the vapor-deposited metal film 160 does not break. In addition, in FIG. 6 and FIG. 4, 12 is a crystal substrate, 16
is an insulating film.

〔Example〕

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

FIG. 1 shows a top view of a mesa-type monolithic light emitting diode array of the present invention, and FIG. 2 shows a perspective view of the cross section taken along the line ]:l-B' in FIG.

In the figure, 21 is a p-type GaAS substrate, 22 is an epitaxially grown p-type Ga'1-XAtxAs layer,
The value of the mixed crystal ratio X is within the range of approximately 0.10 to 0.65, and this is appropriately determined depending on the desired emission wavelength. 26 is an n-type Ga 1-y A layer epitaxially grown on the n-type Ga 1-x AtXAs layer 22;
lyAs layer, and by making the mixed crystal ratio y higher than the above mixed crystal ratio X, pnGal->(AzxA
This is aimed at increasing the light transmittance for the emission wavelength from the s layer 22, increasing the injection efficiency of electrons from the n-type Ga1-fLyA1 layer 26, and confining the minority carriers inserted into the PmGa1-xAtXAs layer 2XAs.

26 is an individual negative electrode for wiring connected to the electrode part 29 of the n W Ga 1-yAtyAs layer 26;
A metal film is deposited.

Reference numeral 24 denotes a phosphosilicate glass (PSG) film provided to form a layer line 6 between the individual negative electrode 26 and the n-type Ga 1-yAzyAs layer 26 other than the electrode section 29 .

25 is a mesa etching groove, 25a is an etching groove in the reverse mesa direction, and 25b is an etching groove in the forward mesa direction, each of which is provided to isolate each light emitting diode portion 60.

Note that etching grooves in the reverse mesa direction must be provided between adjacent light emitting diode portions 60, and etching grooves in the forward mesa direction must be provided so as to traverse the device.

Therefore, since each individual negative electrode 26 is drawn out from the electrode portion 29 by passing over the etched groove 25b in the forward mesa direction, there is no possibility of breakage and disconnection at the mesa portion.

A common positive electrode 27 is formed by depositing a metal film on the entire back surface of the n-type GaAs substrate 21.

In this structure, by applying a voltage between the individual negative electrodes 26 and the common positive electrode 27, the light emitting diode section 60
If a forward current is applied to , nmGa1 + y A ty
Electrons from the As layer 26 become n-type Ga 1- >HAtx
The light is injected into the As layer 22 to cause radiative recombination, and the light is emitted upward from the mesa portion.

Note that the reason why the individual negative electrode 26 is L-shaped at the lead-out portion is to facilitate wire bonding.

Example 1 A (100) Zn-doped pWGaAs substrate of 350 pm thickness with a carrier concentration of 2 x 1018 cm-3
The carrier concentration is 5 by liquid phase epitaxial growth on the surface.
X10 csx of n-type Ga (19At(11As
layer at 20 pm and carrier concentration 2X1017 cm-
' n-type Ga (17AtO, 3AS layers) were sequentially grown to a thickness of 3 μm.

This surface is mesa-etched to form two etching grooves in the <OTl> direction, which is the forward mesa direction with respect to the (100) plane.
In this process, an etching groove in the <011> direction, which is a reverse mesa direction perpendicular to the <011> direction, was provided between two forward mesa etching grooves. Therefore, these mesa etching grooves form light emitting diode portions aligned in a row in the <011> direction. Note that the depth of each mesa etching groove was 5 μm.

Next, a PSG film was grown to a thickness of 0.2 μm so as to cover the entire surface, and then the PSG film on the electrode portion of each light emitting diode portion was removed using hydrofluoric acid.

On the PSG film, a metal film of gold-germanium alloy/nickel/gold is deposited as an individual negative electrode so that it is drawn out from the electrode part of each light emitting diode part through the etching groove in the forward mesa direction, and its thickness is 0.1pm/
0.2 pm/Ll, 5 pm.

A common positive electrode with a thickness of 0.1 pm/tJ, 2 pm/tJ, and 5 pm is placed on the entire back side of the substrate, respectively.
A gold-zinc/nickel/gold metal film of pm was deposited.

The light emitting diode sections were formed at a rate of 16 per 1 mm, and 128 light emitting diode sections could be formed in a chip of 1.6 mm x 8 rrrn.

The rise voltage of this mesa-type monolithic light emitting diode array was 0.4 V, the forward voltage of 1.6 V was 10 mA or more, the reverse breakdown voltage was 7 V or more, and the emission wavelength was 800 nm.

In addition, since the metal film is deposited on the etching in the forward mesa direction, there will be no disconnection as shown in Figure 4(b), and there will be no breakage even after 2000 hours of use with a yield of 100%. We were able to obtain a mesa-type monolithic light-emitting diode.

As described above, the embodiment of the present invention does not require the Zn selective diffusion technology with complicated steps as in the past, and can be manufactured through simple steps, and there is little variation in the characteristics of each light emitting diode section 60. It is something.

In the above embodiment, pmGaAs was used as the substrate crystal, but it is also possible to use n-type GaAs.
When type G a As is used, the common electrode side may be a negative electrode and the individual electrode side may be a positive electrode.

Further, although the so-called central single pole type in which each individual pole provided in each light emitting diode section 60 is located at the center of the light emitting surface has been described, the present invention is not limited to this. It is also applicable to any electrode shape, such as the so-called peripheral electrode type having a light transmission hole as shown in FIG.

In addition, the mixed crystal system formed on the GaAs substrate is also GaAzA.
It is not limited to s, and other mixed crystal systems may be used.

〔Effect of the invention〕

As explained above, the mesa type monolithic light emitting diode array of the present invention has the following remarkable effects.

(1) The process is simple without requiring selective diffusion of Zn, and production can be performed at a high yield without causing defective light emission due to abnormal diffusion, etc., and there is little variation in the light emission characteristics of each light emitting diode section.

(2) Either n-type or p-type G is used as the substrate crystal.
Since an aAS substrate can also be used, the common electrode can be designed to be either a positive or negative electrode, providing a high degree of freedom in selecting the drive circuit.

(6) Since wiring can be drawn out using the vapor-deposited metal film through the etched groove in the forward mesa direction, the wire bonding process can be omitted, resulting in excellent productivity.

[Brief explanation of drawings]

FIG. 1 is a top view showing an embodiment of the present invention, FIG. 2 is a perspective view of the B-B' cross section in FIG. 5 is a top view showing a conventional example, and FIG. 6 is a perspective view taken along the line AA' in FIG. 5. 1: n-type GaAs substrate, 2: n-type GaAs1-XPX layer. 6: n-type GaAS layer, 4: emission recombination part. 5; isolation stripe, 6; individual positive electrode. 7; Common negative electrode; 8; Light extraction hole. 9; 29; electrode part; 12; crystal substrate. 16: Insulating film, 16: Vapor deposited metal film. 21; n-type GaAs substrate, 22; p-type Ga1-xAtX
As layer. 26; n-type Ga 1-yAtyAs layer, 24; PSG
film. 25; mesa etching groove, 26: individual negative electrode. 27: Common positive electrode, 60; Light emitting diode part'! l
1 nomi 21fl 3rd day 8th 4th old SI! I No. 61 Case No. 1 Showa 59 Patent Application No. 249350
No. 2 Name of the invention Mesa-type monolithic light emitting diode array 3 Relationship with the case of the person making the amendment Patent Applicant (f”b Name (512) 2-1-2 Marunouchi, Chiyoda-ku, Tokyo) Representative of Hitachi Cable Co., Ltd. 〒i 5. Subject of the amendment (1) Full text of the specification entry. 6. Contents of the amendment, (1) The entire text of the specification is corrected as shown in the attached sheet. 7. List of attached documents (1) Correction Description 1 or more amendments Description 1. Title of the invention Mesa type monolithic light emitting diode array 2. Claims (1) At least one layer of mixed crystal so that a p-n junction is formed on a GaAs substrate. A system epitaxial layer is grown,
In a light emitting diode array in which the p-n junction surface is divided into a plurality of light emitting diode sections arranged in a row by mutually orthogonal mesa etching grooves, the mesa etching provided in each adjacent light emitting diode section The groove is an etching groove in the reverse mesa direction, and the mesa etching groove that is perpendicular to the etching groove and extending longitudinally through the light emitting diode array is an etching groove in the forward mesa direction. A mesa-type monolithic light emitting diode array, characterized in that the film wiring is drawn out from the electrode section through the etched groove in the forward mesa direction. 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a monolithic light emitting diode array having a common electrode on the back surface of a semiconductor chip and a plurality of individual electrodes on the front surface. [Prior Art] Conventionally, monolithic light emitting diodes have a structure in which impurities are diffused into an epitaxial growth layer grown on a single crystal substrate. FIG. 5 is a top view of a conventional monolithic light emitting diode array, and FIG. 6 is a perspective view taken along line A-A' in FIG. In the figure, 1 is an n-type QaAsl board, 2 and 3 are epitaxially grown n-type GaAs 1-xP, respectively.
They are an X layer and an n-type GaAS layer. 4 and 5 are p-wall regions formed by selectively diffusing Zn from the surface of the n-type GaAS layer 3; 4 is a luminescent recombination region;
is the isolation stripe of the individual light emitting diode section consisting of each light emitting recombiner 4. Reference numeral 6 denotes an individual positive electrode for power supply provided on the electrode portion 9 of the n-type GaAS layer 3 of each light emitting diode portion, and 7 a negative electrode common to each light emitting diode portion provided on the back surface of the n-type GaAS substrate. It is an electrode. When a positive bias is applied between the positive electrode 6 and the negative electrode 7, the electrons from the n-type GaAs P 12 are injected into the luminescent recombination region 4, which is the p-wall region, and the light due to the luminescent recombination is transmitted individually. Positive electrode 6 and n-type Ga
The light passes through the light extraction hole 8 provided in the A S m 3 and is emitted to the outside as shown by the arrow C. Problems to be Solved by the Invention] However, since the conventional diffused light emitting diode array has the above-described configuration, it has the following problems. [1] Since selective diffusion of Zn is required, the process including the process of forming a diffusion mask is complicated. +2) Selective diffusion of Zn is in-ampule diffusion, which increases manufacturing cost. (3) Since the selective diffusion of Zn includes interstitial portions, abnormal diffusion is likely to occur particularly in crystal defect areas, which may reduce the yield. (4) For a driving integrated circuit, it is desirable to have a common positive electrode and separate negative electrodes, but in ■-■ group compound semiconductors, only n-type substrates are used because there is no practical donor diffusion source. Therefore, only an array with a common negative electrode can be obtained. (5) Since the individual electrodes of each light emitting diode part are wired with lead wires, it takes a lot of work for bonding etc.
Not suitable for fine structures. [Object of the invention] The object of the present invention is to solve the problems of the prior art described above,
It does not require a selective diffusion process of Zn, so it can be manufactured in a simple process at a low cost, and the presence of crystal defects does not affect the yield much. Furthermore, it is a mesa-type monolithic structure with a novel structure that does not require wire bonding. The purpose of the present invention is to provide a light emitting diode array. [Means for Solving the Problems] That is, the gist of the present invention is that at least one warm-crystalline epitaxial layer is grown on a GaAs substrate so that a p-n junction is formed, and the p-n junction is formed on a GaAs substrate. In a light emitting diode array that is divided into a plurality of light emitting diode sections arranged in a row by mutually orthogonal mesa etching grooves, the mesa etching grooves provided in each adjacent light emitting diode section are etched in a reverse mesa direction. The +m etching grooves perpendicular to the grooves and extending longitudinally through the light emitting diode array are etching grooves in the forward mesa direction, and the metal film wiring connected to the electrode portion of each light emitting diode portion is connected to the electrode portion. It is drawn out from above through the etched groove in the forward mesa direction. [Additional Explanation to the Abstract] In general, there is strong anisotropy in chemical etching speed and opening direction in zincite-type ■-V group compound semiconductor crystals, and as a result, single-crystal wafers for device formation are For this purpose, a material having a (100) plane or a plane orientation close to this is used. For example, as shown in Figure 3, the (100) plane is
If mesa etching is performed in the OTl> direction without being perpendicular to this direction, the edge angle of each mesa becomes an acute angle in the <oii> direction, which is called an inverted mesa.
> direction or a direction close to this direction is called the reverse mesa direction. On the other hand, the <oTl> direction in which the edge angle becomes obtuse or a direction close to this is called the forward mesa direction. By the way, as shown in FIGS. 4(a) and 4(b), the fused metal film 16 is cut off at the mesa ridge by the etching method in the reverse mesa direction in FIG. 4(a). On the other hand, in the etched groove in the forward mesa direction in FIG. 4(b), the vapor-deposited metal film 16 does not break. Note that in FIGS. 3 and 4, 12 is a crystal substrate, and 13 is an insulating film. [Example] Hereinafter, an example of the present invention will be described in detail based on the drawings. FIG. 1 shows a top view of a mesa-type monolithic light emitting diode array of the present invention, and FIG. 2 shows a perspective view taken along the line B-B' in FIG. In the figure, 21 is a P-type GaAS substrate, 22 is an epitaxially grown p-type GaAlxAs layer, and the value of the mixed crystal ratio X is within the range of x = 0.10 to 0.35. is adjusted appropriately depending on the desired emission wavelength. 23 is n-type Ga1-yAf yAs epitaxially grown on the n-type Ga1-xA1xAS layer 22;
a, and (7) '14 Q ratio'/c, by making it higher than the above mixed crystal ratio X, n-type Ga1-xΔ
1xAS layer 22 for the emission wavelength, an increase in electron injection efficiency from this n-type GaAJAf layer 231-V V , and n-type Ga1-xAI
Minority carriers injected into the XAS layer 22 are intended to be confined. 26 is the electrode part 2 of n-type Ga1-yAJ yAsa23
This is an individual negative electrode for wiring connected to 9, and a metal film is deposited thereon. 24 is n-type GaAj except for the individual negative electrode 26 and the two electrode parts! Phosphosilicate glass (PS) provided for insulating the As layer 23
G) It is a membrane. 25 is a mesa etching groove, 25a is an etching groove in the reverse mesa direction, and 25b is an etching groove in the forward mesa direction, each of which is provided to isolate each light emitting diode section 30. Note that etching grooves in the reverse mena direction must be provided between adjacent light emitting diode sections 30, and etching grooves in the forward mesa direction must be provided so as to traverse the device. Therefore, each individual negative electrode 26 passes over the etching groove 25b in the forward mesa direction from the electrode portion 29? Since the wire is pulled out at the edge of the mesa, there is no chance of breakage or wire breakage at the ridge of the mesa. Reference numeral 27 denotes a common positive electrode formed by depositing a metal film on the entire surface of the back surface of the p-type GaAs substrate 21. In this structure, by applying a voltage between the individual negative electrodes 26 and the common positive electrode 27, the light emitting diode section 30
If a forward current is applied to the n-type Ga1-yAf As1
From 12.3, electrons are p-type Ga AV
The light is injected into the 1-xfx ASI 522 to cause radiative recombination, and the light is emitted upward from the mesa. Note that the reason why the individual negative electrodes 26 are L-shaped at the lead-out portion is to facilitate wire bonding. Example 1゜Z n To-7, Kiv IJ 7 concentration 2 x 1018 CI
350 μm thick P-type GaAS &! of the board (
100) N-type Ga Ail with a carrier concentration of 5 x 10 cm-x was grown on the surface by liquid phase epitaxial growth.
As0.9 0.1 layer 20 μm and carrier concentration 2 x 1017 cm
4 n-type Ga o, 7A1'. , 3AS15j 3
The micrometers were grown sequentially. This surface is mesa-etched to form two etching grooves in the <OTl> direction, which is the forward mesa direction, with respect to the (100) plane, and in the <011> direction, which is the reverse mesa direction perpendicular to the <OTl> direction. Two etching grooves were formed by sequential mesa etching WIIWA&:. Therefore, these mesa etching grooves form light emitting diode portions aligned in a row in the <OTl> direction. Note that the depth of each mesa-etched groove was 5 μm. Next, a PSG film was grown to a thickness of 0.2 μm so as to cover the entire surface, and then the PSG film on the electrode portion of each light emitting diode portion was removed using hydrofluoric acid. On the PSG film, gold-germanium alloy/nickel/gold-germanium alloy/nickel is applied as an individual negative electrode to be drawn out from the electrode part of each light emitting diode part through the etching groove in the forward mesa direction.
A gold metal film was evaporated to a thickness of 0.1 μm.
The thickness was 0.2 μm and 10.5 μm. A gold-zinc/nickel/gold metal film having a thickness of 0.1 μm, 10.2 μm, and 10.5 μm, respectively, was deposited as a common positive electrode on the entire back surface of the substrate. The light emitting diode sections were formed at a rate of 16 WA per 11111I, and 128 light emitting diode sections could be formed in a chip of 1.6s+X8am. The rise voltage of this mesa-type monolithic light emitting diode array was 0.4 V, the forward voltage of 1.6 V was 10 mA or more, the reverse breakdown voltage was 7 V or more, and the emission wavelength was 800 V. In addition, since the metal film is deposited on the etching in the forward mesa direction, there will be no disconnection as shown in Figure 4(b), and there will be no breakage even after 2000 hours of use with a yield of 100%. We were able to obtain a mesa-type monolithic light-emitting diode. As described above, the embodiment of the present invention does not require the Zn selective diffusion technology with complicated steps as in the past, and can be manufactured through simple steps, and there is little variation in the characteristics of each light emitting diode section 30. It is something. In the above embodiment, n-type GaAs was used as the substrate crystal, but it is also possible to use n-type GaAs, and n-type GaAs
When As is used, the common electrode side may be used as a negative electrode, and the individual electrode side may be used as a positive electrode. Further, although the description has been made of a so-called center electrode type in which the individual electrode provided in each light emitting diode section 30 is located at the center of the light emitting surface, the present invention is not limited to this. The present invention can be applied to any electrode shape, such as the so-called peripheral electrode type having a light transmission hole shown in the figure. In addition, the mixed crystal system formed on the GaAS substrate also changes to Ga8A.
It is not limited to S, and other mixed crystal systems may be used. [Effects of the Invention] As explained above, the mesa-type monolithic light emitting diode array of the present invention has the following remarkable effects. (1) The process is simple without the need for selective diffusion of Zn, and since no light emission defects occur due to abnormal diffusion, etc., it can be produced at a high yield, and there is little variation in the light emission characteristics of each light emitting diode section. (2) Whether p-type or p-type G is used as the substrate crystal.
Since an aAS substrate can also be used, the common electrode can be designed to be either a positive or negative N pole, providing a high degree of freedom in selecting the drive circuit. (Since wiring can be drawn out using the vapor-deposited metal film through the etched grooves in the three-order mesa direction, it is possible to omit the wire bonding process, resulting in excellent productivity. 4. Brief explanation of the drawings Figure 1 is A top view showing an embodiment of the present invention, FIG. 2 is a perspective view of the B-B cross section in FIG. 1, FIG. 3 is an explanatory view showing a mesa shape by etching, and FIG. Fig. 5 is a top view showing a conventional example, and Fig. 6 is a perspective view of the A-A section in Fig. 5. 1. N-type GaAS substrate. 2. N-type GaAs P Pi. -x x 3. N-type GaAS layer. 4... Light emission recombination part. 5... Isolation stripe. 6... Individual positive electrode. 7... Common negative electrode. 8... Light extraction hole. 9, 29. ... Electrode part. 12 ... Crystal substrate. 13 ... Insulating film. 16 ... Vapor-deposited gold a film. 21 - P-type GaAS substrate. 22 - l) type Ga A1XAS layer. 1-× 23-n type Ga Af Asff1゜1-V
V24...PSG film. 25...Mesa etching groove. 26...Individual negative electrode. 27...Common positive electrode. 30... Light emitting diode section. Agent: Patent Attorney Fujio Sato Display of Chive 1 Case 1982 Patent Application No. 249350
No. 2 Name of the invention Mesa-type monolithic light emitting diode array 3 Relationship with the person making the correction Patent Address Tokyo: I! Representative of No. 2-1-2, T-2-chome, Uki-ku ￥ T i 7, ``Third wa'' in the second line of page 13 of the amended specification is corrected to ``Third Seal wa''.

Claims (1)

[Claims] (1) At least one mixed crystal epitaxial layer is grown on the GaAs substrate so that a p-n junction is formed,
In a light emitting diode array in which the p-n junction surface is divided into a plurality of light emitting diode parts arranged in a row by mesa etching grooves that are perpendicular to each other, the mesa etching groove provided between each adjacent light emitting diode part. The etching groove is an etching groove in a reverse mesa direction, and the mesa etching groove that is perpendicular to the etching groove and extending longitudinally through the light emitting diode array is an etching groove in a forward mesa direction, and is connected to the electrode part of each light emitting diode part. A mesa-type monolithic light emitting diode array, characterized in that a metal film wiring is drawn out from the electrode section through the etching groove in the forward mesa direction.