JPS6215519B2 - - Google Patents
Info
- Publication number
- JPS6215519B2 JPS6215519B2 JP57136916A JP13691682A JPS6215519B2 JP S6215519 B2 JPS6215519 B2 JP S6215519B2 JP 57136916 A JP57136916 A JP 57136916A JP 13691682 A JP13691682 A JP 13691682A JP S6215519 B2 JPS6215519 B2 JP S6215519B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystal
- crystal
- temperature
- single crystal
- giant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 104
- 238000010438 heat treatment Methods 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910000859 α-Fe Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 description 26
- 230000008025 crystallization Effects 0.000 description 26
- 238000000034 method Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57136916A JPS5926993A (ja) | 1982-08-05 | 1982-08-05 | 酸化物単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57136916A JPS5926993A (ja) | 1982-08-05 | 1982-08-05 | 酸化物単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5926993A JPS5926993A (ja) | 1984-02-13 |
| JPS6215519B2 true JPS6215519B2 (ko) | 1987-04-08 |
Family
ID=15186568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57136916A Granted JPS5926993A (ja) | 1982-08-05 | 1982-08-05 | 酸化物単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5926993A (ko) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162496A (en) * | 1979-05-31 | 1980-12-17 | Ngk Insulators Ltd | Manufacture of single crystal |
| JPS58156588A (ja) * | 1982-03-09 | 1983-09-17 | Matsushita Electric Ind Co Ltd | 単結晶体の製造法 |
-
1982
- 1982-08-05 JP JP57136916A patent/JPS5926993A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162496A (en) * | 1979-05-31 | 1980-12-17 | Ngk Insulators Ltd | Manufacture of single crystal |
| JPS58156588A (ja) * | 1982-03-09 | 1983-09-17 | Matsushita Electric Ind Co Ltd | 単結晶体の製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5926993A (ja) | 1984-02-13 |
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