JPS55162496A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS55162496A
JPS55162496A JP6789379A JP6789379A JPS55162496A JP S55162496 A JPS55162496 A JP S55162496A JP 6789379 A JP6789379 A JP 6789379A JP 6789379 A JP6789379 A JP 6789379A JP S55162496 A JPS55162496 A JP S55162496A
Authority
JP
Japan
Prior art keywords
crystal
temp
single crystal
polycrystal
grain growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6789379A
Other languages
Japanese (ja)
Other versions
JPS611391B2 (en
Inventor
Motoichiro Matsuzawa
Shunzo Mase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP6789379A priority Critical patent/JPS55162496A/en
Priority to US06/151,605 priority patent/US4402787A/en
Priority to FR8012093A priority patent/FR2457913B1/en
Priority to NL8003163A priority patent/NL8003163A/en
Priority to DE3020692A priority patent/DE3020692C2/en
Priority to GB8018017A priority patent/GB2054405B/en
Publication of JPS55162496A publication Critical patent/JPS55162496A/en
Priority to US06/443,030 priority patent/US4519870A/en
Publication of JPS611391B2 publication Critical patent/JPS611391B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To cheaply manufacture a single crystal through solid phase reaction at a relatively low temp. by contacting a single crystal very similar to a polycrystal body in crystal structure to the body showing discontinuous grain growth at a high temp. followed by heating to a specified temp.
CONSTITUTION: A single crystal very similar to a polycrystal body in crystal structure is contacted to the body showing discontinuous grain growth at a high temp. At this time, the polished surfaces of the crystal and the body are contacted directly or with a soln. of an org. or inorg. salt, inbetween, contg. a metallic element forming the body or the crystal, or a soln. which dissolves part of the body or the crystal. They are then haated at a low temp. and joined by baking. This joined body is heated to a temp. below the temp. at which discontinuous grain growth of the polycrystal body occurs to induce solid phase reaction at the interface between fine grains of the polycrystal body and the single crystal. Thus, the fine grains are united with the crystal to grow a single crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP6789379A 1979-05-31 1979-05-31 Manufacture of single crystal Granted JPS55162496A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6789379A JPS55162496A (en) 1979-05-31 1979-05-31 Manufacture of single crystal
US06/151,605 US4402787A (en) 1979-05-31 1980-05-20 Method for producing a single crystal
FR8012093A FR2457913B1 (en) 1979-05-31 1980-05-30 METHOD FOR MANUFACTURING MONOCRYSTALS, PARTICULARLY FERRITE, AND MAGNETIC HEADS COMPRISING FERRITE MONOCRYSTALS THUS MANUFACTURED
NL8003163A NL8003163A (en) 1979-05-31 1980-05-30 METHOD FOR MANUFACTURING A SINGLE CRYSTAL
DE3020692A DE3020692C2 (en) 1979-05-31 1980-05-30 Process for the production of single crystals
GB8018017A GB2054405B (en) 1979-05-31 1980-06-02 Method for producing a single crystal
US06/443,030 US4519870A (en) 1979-05-31 1982-11-19 Method for producing a single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6789379A JPS55162496A (en) 1979-05-31 1979-05-31 Manufacture of single crystal

Publications (2)

Publication Number Publication Date
JPS55162496A true JPS55162496A (en) 1980-12-17
JPS611391B2 JPS611391B2 (en) 1986-01-16

Family

ID=13358019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6789379A Granted JPS55162496A (en) 1979-05-31 1979-05-31 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS55162496A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156588A (en) * 1982-03-09 1983-09-17 Matsushita Electric Ind Co Ltd Preparation of single crystal
JPS5921591A (en) * 1982-07-28 1984-02-03 Matsushita Electric Ind Co Ltd Production of single crystal ferrite
JPS5926993A (en) * 1982-08-05 1984-02-13 Matsushita Electric Ind Co Ltd Preparation of oxide single crystal
JPS62216987A (en) * 1986-03-17 1987-09-24 Ngk Insulators Ltd Production of single crystal ferrite
EP0053481B1 (en) * 1980-11-28 1987-11-11 Ngk Insulators, Ltd. Method for producing a single crystal
KR100375551B1 (en) * 2000-04-19 2003-03-10 주식회사 세라콤 Method for Single Crystal Growth of Barium Titanate and Barium Titanate Solid Solution
JP2013151425A (en) * 2013-03-28 2013-08-08 National Institute For Materials Science Oxide single crystal
JP2022522445A (en) * 2019-02-27 2022-04-19 北京大学 Method of clonal growth of single crystal metal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158199A (en) * 1979-05-30 1980-12-09 Toshiba Corp Manufacture of sheetlike single crystal ferrite

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158199A (en) * 1979-05-30 1980-12-09 Toshiba Corp Manufacture of sheetlike single crystal ferrite

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053481B1 (en) * 1980-11-28 1987-11-11 Ngk Insulators, Ltd. Method for producing a single crystal
JPS58156588A (en) * 1982-03-09 1983-09-17 Matsushita Electric Ind Co Ltd Preparation of single crystal
JPS5921591A (en) * 1982-07-28 1984-02-03 Matsushita Electric Ind Co Ltd Production of single crystal ferrite
JPS6215517B2 (en) * 1982-07-28 1987-04-08 Matsushita Electric Ind Co Ltd
JPS5926993A (en) * 1982-08-05 1984-02-13 Matsushita Electric Ind Co Ltd Preparation of oxide single crystal
JPS6215519B2 (en) * 1982-08-05 1987-04-08 Matsushita Electric Ind Co Ltd
JPS62216987A (en) * 1986-03-17 1987-09-24 Ngk Insulators Ltd Production of single crystal ferrite
KR100375551B1 (en) * 2000-04-19 2003-03-10 주식회사 세라콤 Method for Single Crystal Growth of Barium Titanate and Barium Titanate Solid Solution
JP2013151425A (en) * 2013-03-28 2013-08-08 National Institute For Materials Science Oxide single crystal
JP2022522445A (en) * 2019-02-27 2022-04-19 北京大学 Method of clonal growth of single crystal metal

Also Published As

Publication number Publication date
JPS611391B2 (en) 1986-01-16

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