JPS55162496A - Manufacture of single crystal - Google Patents
Manufacture of single crystalInfo
- Publication number
- JPS55162496A JPS55162496A JP6789379A JP6789379A JPS55162496A JP S55162496 A JPS55162496 A JP S55162496A JP 6789379 A JP6789379 A JP 6789379A JP 6789379 A JP6789379 A JP 6789379A JP S55162496 A JPS55162496 A JP S55162496A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- temp
- single crystal
- polycrystal
- grain growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To cheaply manufacture a single crystal through solid phase reaction at a relatively low temp. by contacting a single crystal very similar to a polycrystal body in crystal structure to the body showing discontinuous grain growth at a high temp. followed by heating to a specified temp.
CONSTITUTION: A single crystal very similar to a polycrystal body in crystal structure is contacted to the body showing discontinuous grain growth at a high temp. At this time, the polished surfaces of the crystal and the body are contacted directly or with a soln. of an org. or inorg. salt, inbetween, contg. a metallic element forming the body or the crystal, or a soln. which dissolves part of the body or the crystal. They are then haated at a low temp. and joined by baking. This joined body is heated to a temp. below the temp. at which discontinuous grain growth of the polycrystal body occurs to induce solid phase reaction at the interface between fine grains of the polycrystal body and the single crystal. Thus, the fine grains are united with the crystal to grow a single crystal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6789379A JPS55162496A (en) | 1979-05-31 | 1979-05-31 | Manufacture of single crystal |
US06/151,605 US4402787A (en) | 1979-05-31 | 1980-05-20 | Method for producing a single crystal |
FR8012093A FR2457913B1 (en) | 1979-05-31 | 1980-05-30 | METHOD FOR MANUFACTURING MONOCRYSTALS, PARTICULARLY FERRITE, AND MAGNETIC HEADS COMPRISING FERRITE MONOCRYSTALS THUS MANUFACTURED |
NL8003163A NL8003163A (en) | 1979-05-31 | 1980-05-30 | METHOD FOR MANUFACTURING A SINGLE CRYSTAL |
DE3020692A DE3020692C2 (en) | 1979-05-31 | 1980-05-30 | Process for the production of single crystals |
GB8018017A GB2054405B (en) | 1979-05-31 | 1980-06-02 | Method for producing a single crystal |
US06/443,030 US4519870A (en) | 1979-05-31 | 1982-11-19 | Method for producing a single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6789379A JPS55162496A (en) | 1979-05-31 | 1979-05-31 | Manufacture of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55162496A true JPS55162496A (en) | 1980-12-17 |
JPS611391B2 JPS611391B2 (en) | 1986-01-16 |
Family
ID=13358019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6789379A Granted JPS55162496A (en) | 1979-05-31 | 1979-05-31 | Manufacture of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55162496A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58156588A (en) * | 1982-03-09 | 1983-09-17 | Matsushita Electric Ind Co Ltd | Preparation of single crystal |
JPS5921591A (en) * | 1982-07-28 | 1984-02-03 | Matsushita Electric Ind Co Ltd | Production of single crystal ferrite |
JPS5926993A (en) * | 1982-08-05 | 1984-02-13 | Matsushita Electric Ind Co Ltd | Preparation of oxide single crystal |
JPS62216987A (en) * | 1986-03-17 | 1987-09-24 | Ngk Insulators Ltd | Production of single crystal ferrite |
EP0053481B1 (en) * | 1980-11-28 | 1987-11-11 | Ngk Insulators, Ltd. | Method for producing a single crystal |
KR100375551B1 (en) * | 2000-04-19 | 2003-03-10 | 주식회사 세라콤 | Method for Single Crystal Growth of Barium Titanate and Barium Titanate Solid Solution |
JP2013151425A (en) * | 2013-03-28 | 2013-08-08 | National Institute For Materials Science | Oxide single crystal |
JP2022522445A (en) * | 2019-02-27 | 2022-04-19 | 北京大学 | Method of clonal growth of single crystal metal |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158199A (en) * | 1979-05-30 | 1980-12-09 | Toshiba Corp | Manufacture of sheetlike single crystal ferrite |
-
1979
- 1979-05-31 JP JP6789379A patent/JPS55162496A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158199A (en) * | 1979-05-30 | 1980-12-09 | Toshiba Corp | Manufacture of sheetlike single crystal ferrite |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0053481B1 (en) * | 1980-11-28 | 1987-11-11 | Ngk Insulators, Ltd. | Method for producing a single crystal |
JPS58156588A (en) * | 1982-03-09 | 1983-09-17 | Matsushita Electric Ind Co Ltd | Preparation of single crystal |
JPS5921591A (en) * | 1982-07-28 | 1984-02-03 | Matsushita Electric Ind Co Ltd | Production of single crystal ferrite |
JPS6215517B2 (en) * | 1982-07-28 | 1987-04-08 | Matsushita Electric Ind Co Ltd | |
JPS5926993A (en) * | 1982-08-05 | 1984-02-13 | Matsushita Electric Ind Co Ltd | Preparation of oxide single crystal |
JPS6215519B2 (en) * | 1982-08-05 | 1987-04-08 | Matsushita Electric Ind Co Ltd | |
JPS62216987A (en) * | 1986-03-17 | 1987-09-24 | Ngk Insulators Ltd | Production of single crystal ferrite |
KR100375551B1 (en) * | 2000-04-19 | 2003-03-10 | 주식회사 세라콤 | Method for Single Crystal Growth of Barium Titanate and Barium Titanate Solid Solution |
JP2013151425A (en) * | 2013-03-28 | 2013-08-08 | National Institute For Materials Science | Oxide single crystal |
JP2022522445A (en) * | 2019-02-27 | 2022-04-19 | 北京大学 | Method of clonal growth of single crystal metal |
Also Published As
Publication number | Publication date |
---|---|
JPS611391B2 (en) | 1986-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5365536A (en) | Oil pan | |
EP0141366A3 (en) | Rapid rate sintering of ceramics | |
DE3868721D1 (en) | HIGH TEMPERATURE RESISTANT ABRASIVE BODY WITH POLYCRYSTALLINE DIAMONDS. | |
JPS52103735A (en) | High-frequency heater | |
JPS52128821A (en) | Preparation of high tensile steel having superior low temperature toughness and yield point above 40 kg/pp2 | |
JPS55162496A (en) | Manufacture of single crystal | |
EP0390672A3 (en) | Method for heat process of silicon | |
JPS5777038A (en) | Manufacture of crystallized glass from phosphate glass | |
EG12627A (en) | New process for the manufacture of 5-amino-1,2,3-thiadiazole | |
JPS51111476A (en) | Method of liquid phase epitaxial crystal growth | |
NL173265C (en) | PROCESS FOR PREPARING INTERMEDIATES FOR THE FORMATION OF 4,4'-DICYAN POLYHALOGEN-DIPHENOXYALKANS AND CONVERTING THESE INTERMEDIATES IN THESE DICYAN COMPOUNDS. | |
JPS5377360A (en) | Timer for auotmatic ovan | |
JPS55158199A (en) | Manufacture of sheetlike single crystal ferrite | |
JPS52140085A (en) | Gear cutting method by way of fusing | |
JPS52104473A (en) | Control method for crystal growth | |
JPS545597A (en) | Electrolytic polishing polycrystalline ferrite | |
Domyshev et al. | The Magnetostriction of Erbium--Cobalt Films in the Temperature Region of Magnetic Compensation | |
JPS52117825A (en) | Austenite stainless steel for high temperature | |
Gulyaev et al. | Characteristics of the Formation of a Diffusion Case During Nitriding | |
JPS5371352A (en) | Cooking oven | |
Koneva | The Effect of Test Temperature on the Work Hardening of Single-Crystal and Polycrystalline Ni 3 Fe Alloy | |
Balan et al. | Stability of the Sub-Structure of W Single Crystals During High-Temperature Annealing | |
JPS538853A (en) | Cooling water temperature controller | |
Johnson et al. | Isopycnal temperature-salinity diagrams | |
Vainblat | Critical parameters of hot deformation |