JPS6213819B2 - - Google Patents
Info
- Publication number
- JPS6213819B2 JPS6213819B2 JP52156845A JP15684577A JPS6213819B2 JP S6213819 B2 JPS6213819 B2 JP S6213819B2 JP 52156845 A JP52156845 A JP 52156845A JP 15684577 A JP15684577 A JP 15684577A JP S6213819 B2 JPS6213819 B2 JP S6213819B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- substrate
- mosi
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 229910016006 MoSi Inorganic materials 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15684577A JPS5488783A (en) | 1977-12-26 | 1977-12-26 | Semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15684577A JPS5488783A (en) | 1977-12-26 | 1977-12-26 | Semiconductor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29736287A Division JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Ｍｏｓ型半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5488783A JPS5488783A (en) | 1979-07-14 |
| JPS6213819B2 true JPS6213819B2 (US08066781-20111129-C00013.png) | 1987-03-28 |
Family
ID=15636621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15684577A Granted JPS5488783A (en) | 1977-12-26 | 1977-12-26 | Semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5488783A (US08066781-20111129-C00013.png) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0235606Y2 (US08066781-20111129-C00013.png) * | 1986-01-21 | 1990-09-27 | ||
| JPH0454914Y2 (US08066781-20111129-C00013.png) * | 1986-08-07 | 1992-12-24 | ||
| JPH0516101Y2 (US08066781-20111129-C00013.png) * | 1986-08-07 | 1993-04-27 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645049A (en) * | 1979-09-19 | 1981-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| NL186352C (nl) * | 1980-08-27 | 1990-11-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| JPS57176768A (en) * | 1981-04-22 | 1982-10-30 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS587489Y2 (ja) * | 1981-04-27 | 1983-02-09 | 日本コロムビア株式会社 | 磁気録音再生装置 |
| JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
| US4814853A (en) * | 1981-10-28 | 1989-03-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device with programmable fuse |
| JPH0658965B2 (ja) * | 1983-08-30 | 1994-08-03 | 株式会社東芝 | 半導体装置の製造方法 |
| JPS6337635A (ja) * | 1986-07-31 | 1988-02-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS63161641A (ja) * | 1986-12-25 | 1988-07-05 | Nec Corp | 半導体記憶装置 |
| JPH0616556B2 (ja) * | 1987-04-14 | 1994-03-02 | 株式会社東芝 | 半導体装置 |
| JP2654805B2 (ja) * | 1988-05-20 | 1997-09-17 | 富士通株式会社 | 半導体装置 |
| JPS6486551A (en) * | 1988-05-27 | 1989-03-31 | Hitachi Ltd | Semiconductor storage device |
| JPH0636426B2 (ja) * | 1988-05-27 | 1994-05-11 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
| JPH0198255A (ja) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | 半導体記憶装置 |
| JP2508818B2 (ja) * | 1988-10-03 | 1996-06-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
1977
- 1977-12-26 JP JP15684577A patent/JPS5488783A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0235606Y2 (US08066781-20111129-C00013.png) * | 1986-01-21 | 1990-09-27 | ||
| JPH0454914Y2 (US08066781-20111129-C00013.png) * | 1986-08-07 | 1992-12-24 | ||
| JPH0516101Y2 (US08066781-20111129-C00013.png) * | 1986-08-07 | 1993-04-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5488783A (en) | 1979-07-14 |
