JPS57176768A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57176768A
JPS57176768A JP6082881A JP6082881A JPS57176768A JP S57176768 A JPS57176768 A JP S57176768A JP 6082881 A JP6082881 A JP 6082881A JP 6082881 A JP6082881 A JP 6082881A JP S57176768 A JPS57176768 A JP S57176768A
Authority
JP
Japan
Prior art keywords
electrodes
film
wirings
patterning
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6082881A
Other languages
Japanese (ja)
Inventor
Yukio Takeuchi
Toru Mochizuki
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6082881A priority Critical patent/JPS57176768A/en
Publication of JPS57176768A publication Critical patent/JPS57176768A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To withstand high temperature treatment and to increase ohmic contact and adhesion to an insulating film, by providing a double layer structure of electrodes and wirings comprising an impurity doped metallic silicide film with a high melting point, and an undoped metallic silicide with a high melting point. CONSTITUTION:Oxide films 2 and 3 having a hole 4 are deposited on a P type Si substrate, and a phosphorus doped MoSi2 film 5 and an undoped MoSi2 film 6 are deposited thereon. The layered films are selectively etched, the patterning of a gate electrode 7 is performed on the part where a channel region is to be formed, and the patterning of a directly contacted wiring layer 8 is performed on the part where a source region is to be formed. Phosphorus is diffused, and self-aligned N<+> type source and drain regions 9 and 10 are formed. Electrodes 12 and 13 are formed, and an MOS transistor is obtained. In this method, the electrodes and wirings which have excellent ohmic contact and adhesion to the insulating film and small resistivity can be obtained.
JP6082881A 1981-04-22 1981-04-22 Semiconductor device and manufacture thereof Pending JPS57176768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6082881A JPS57176768A (en) 1981-04-22 1981-04-22 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6082881A JPS57176768A (en) 1981-04-22 1981-04-22 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57176768A true JPS57176768A (en) 1982-10-30

Family

ID=13153599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6082881A Pending JPS57176768A (en) 1981-04-22 1981-04-22 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176768A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor

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