JPS5488783A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5488783A
JPS5488783A JP15684577A JP15684577A JPS5488783A JP S5488783 A JPS5488783 A JP S5488783A JP 15684577 A JP15684577 A JP 15684577A JP 15684577 A JP15684577 A JP 15684577A JP S5488783 A JPS5488783 A JP S5488783A
Authority
JP
Japan
Prior art keywords
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15684577A
Other languages
English (en)
Other versions
JPS6213819B2 (ja
Inventor
Tooru Mochizuki
Takanori Tsujimaru
Kenji Shibata
Takamaro Mizoguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHO LSI GIJUTSU KENKYU KUMIAI
Priority to JP15684577A priority Critical patent/JPS5488783A/ja
Publication of JPS5488783A publication Critical patent/JPS5488783A/ja
Publication of JPS6213819B2 publication Critical patent/JPS6213819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP15684577A 1977-12-26 1977-12-26 Semiconductor Granted JPS5488783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15684577A JPS5488783A (en) 1977-12-26 1977-12-26 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15684577A JPS5488783A (en) 1977-12-26 1977-12-26 Semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29736287A Division JPS63265448A (ja) 1987-11-27 1987-11-27 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5488783A true JPS5488783A (en) 1979-07-14
JPS6213819B2 JPS6213819B2 (ja) 1987-03-28

Family

ID=15636621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15684577A Granted JPS5488783A (en) 1977-12-26 1977-12-26 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5488783A (ja)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645049A (en) * 1979-09-19 1981-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS56167051U (ja) * 1981-04-27 1981-12-10
JPS5772383A (en) * 1980-08-27 1982-05-06 Philips Nv Method of fabricating semiconductor device
DE3141195A1 (de) * 1980-11-07 1982-06-24 Hitachi, Ltd., Tokyo Integrierte halbleiter-schaltungsanordnung und verfahren zu ihrer herstellung
JPS57176768A (en) * 1981-04-22 1982-10-30 Toshiba Corp Semiconductor device and manufacture thereof
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS6050961A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
JPS6337635A (ja) * 1986-07-31 1988-02-18 Fujitsu Ltd 半導体装置の製造方法
JPS63161641A (ja) * 1986-12-25 1988-07-05 Nec Corp 半導体記憶装置
JPS63255965A (ja) * 1987-04-14 1988-10-24 Toshiba Corp 半導体装置
US4814853A (en) * 1981-10-28 1989-03-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with programmable fuse
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198255A (ja) * 1988-05-27 1989-04-17 Hitachi Ltd 半導体記憶装置
JPH0198256A (ja) * 1988-05-27 1989-04-17 Hitachi Ltd 半導体記憶装置
JPH01292842A (ja) * 1988-05-20 1989-11-27 Fujitsu Ltd 半導体装置
US5045901A (en) * 1988-10-03 1991-09-03 Mitsubishi Denki Kabushiki Kaisha Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235606Y2 (ja) * 1986-01-21 1990-09-27
JPH0516101Y2 (ja) * 1986-08-07 1993-04-27
JPH0454914Y2 (ja) * 1986-08-07 1992-12-24

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645049A (en) * 1979-09-19 1981-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5772383A (en) * 1980-08-27 1982-05-06 Philips Nv Method of fabricating semiconductor device
DE3141195A1 (de) * 1980-11-07 1982-06-24 Hitachi, Ltd., Tokyo Integrierte halbleiter-schaltungsanordnung und verfahren zu ihrer herstellung
JPS57176768A (en) * 1981-04-22 1982-10-30 Toshiba Corp Semiconductor device and manufacture thereof
JPS56167051U (ja) * 1981-04-27 1981-12-10
JPS587489Y2 (ja) * 1981-04-27 1983-02-09 日本コロムビア株式会社 磁気録音再生装置
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
US4814853A (en) * 1981-10-28 1989-03-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with programmable fuse
JPS6050961A (ja) * 1983-08-30 1985-03-22 Toshiba Corp 半導体装置の製造方法
JPS6337635A (ja) * 1986-07-31 1988-02-18 Fujitsu Ltd 半導体装置の製造方法
JPS63161641A (ja) * 1986-12-25 1988-07-05 Nec Corp 半導体記憶装置
JPS63255965A (ja) * 1987-04-14 1988-10-24 Toshiba Corp 半導体装置
JPH01292842A (ja) * 1988-05-20 1989-11-27 Fujitsu Ltd 半導体装置
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198255A (ja) * 1988-05-27 1989-04-17 Hitachi Ltd 半導体記憶装置
JPH0198256A (ja) * 1988-05-27 1989-04-17 Hitachi Ltd 半導体記憶装置
US5045901A (en) * 1988-10-03 1991-09-03 Mitsubishi Denki Kabushiki Kaisha Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions

Also Published As

Publication number Publication date
JPS6213819B2 (ja) 1987-03-28

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