JPS62137820A - 半導体薄膜の形成方法 - Google Patents
半導体薄膜の形成方法Info
- Publication number
- JPS62137820A JPS62137820A JP27800685A JP27800685A JPS62137820A JP S62137820 A JPS62137820 A JP S62137820A JP 27800685 A JP27800685 A JP 27800685A JP 27800685 A JP27800685 A JP 27800685A JP S62137820 A JPS62137820 A JP S62137820A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- oxygen
- sih4
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000002294 plasma sputter deposition Methods 0.000 claims abstract description 7
- 229910000077 silane Inorganic materials 0.000 claims abstract description 7
- 239000012808 vapor phase Substances 0.000 claims abstract description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 230000007547 defect Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000005247 gettering Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000006837 decompression Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241001474791 Proboscis Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800685A JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27800685A JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62137820A true JPS62137820A (ja) | 1987-06-20 |
| JPH0516653B2 JPH0516653B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=17591316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27800685A Granted JPS62137820A (ja) | 1985-12-12 | 1985-12-12 | 半導体薄膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62137820A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010044998A (ko) * | 1999-11-02 | 2001-06-05 | 박종섭 | 불순물 도핑 장치의 세정방법 |
-
1985
- 1985-12-12 JP JP27800685A patent/JPS62137820A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010044998A (ko) * | 1999-11-02 | 2001-06-05 | 박종섭 | 불순물 도핑 장치의 세정방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0516653B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3524679B2 (ja) | 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法 | |
| JP3475217B2 (ja) | ヘテロエピタキシャル的に析出されたダイヤモンド | |
| JPH09312245A (ja) | 薄膜堆積基板および薄膜堆積基板の作製方法 | |
| Nakashima et al. | Epitaxial growth of SiC film on silicon substrate and its crystal structure | |
| JPS62137820A (ja) | 半導体薄膜の形成方法 | |
| JPS6114726A (ja) | 半導体基板の処理方法 | |
| JPH04226018A (ja) | 半導体装置の製造方法 | |
| USH28H (en) | Chemical vapor deposition (CVD) of cubic silicon carbide SiC | |
| JP2609844B2 (ja) | エピタキシヤル成長方法 | |
| JPH04258115A (ja) | 半導体基板の製造方法 | |
| JPS63252997A (ja) | ダイヤモンド単結晶の製造方法 | |
| JPS6341014A (ja) | エピタキシヤル成長方法 | |
| JPS62166527A (ja) | シリコン酸化膜の形成方法 | |
| JPH058671Y2 (enrdf_load_stackoverflow) | ||
| JPS59177919A (ja) | 薄膜の選択成長法 | |
| JPS6290921A (ja) | エピタキシヤル成長方法 | |
| JPS6277466A (ja) | 薄膜形成方法 | |
| JPS58169907A (ja) | 薄膜生成装置 | |
| JPH01152719A (ja) | Ｓｏｉ構造の形成方法 | |
| JPS609658B2 (ja) | 炭化珪素基板の製造方法 | |
| JPS63252998A (ja) | ヘテロ接合構造 | |
| JPS59119731A (ja) | 気相成長装置 | |
| JPH02267196A (ja) | 炭化硅素の選択的結晶成長方法 | |
| JPS61170021A (ja) | シリコン基板表面の酸化膜除去法 | |
| JPS63119222A (ja) | シリコンの気相成長法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |